3DD13002B TRANSISTOR NPN Search Results

3DD13002B TRANSISTOR NPN Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

3DD13002B TRANSISTOR NPN Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TO-92 Plastic-Encapsulate Transistors 3DD13002/ 3DD13002B TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 900 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage 600 V V(BR)CBO:	Original	3DD13002/ 3DD13002B 3DD13002: 3DD13002B: 200mA, 100mA	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002/3DD13002B TRANSISTOR（ NPN ） FEATURE Power dissipation PCM : 3DD13002 ： 1.2 W （Tamb=25℃） 3DD13002B： 1 W （Tamb=25℃） Collector current ICM :	Original	3DD13002/3DD13002B 3DD13002 3DD13002Bï 270TYP 050TYP	PDF
npn 600v to92 Abstract: 3DD13002B TRANSISTOR NPN 3DD13002 3DD13002B transistor 600v. 1a. to 92 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002/ 3DD13002B TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 900 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A	Original	3DD13002/ 3DD13002B 3DD13002: 3DD13002B: 200mA, 100mA npn 600v to92 3DD13002B TRANSISTOR NPN 3DD13002 3DD13002B transistor 600v. 1a. to 92	PDF
3DD13002 Abstract: 3DD13002B Text: 3DD13002/B 3DD13002/ 3DD13002B TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 900 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range	Original	3DD13002/B 3DD13002/ 3DD13002B 3DD13002: 3DD13002B: 200mA, 100mA 3DD13002 3DD13002B	PDF
3DD13002B Abstract: BR 610v Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR（ NPN ） TO-92 FEATURES • power switching applications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter	Original	3DD13002B 200mA 200mA, 100mA 3DD13002B BR 610v	PDF
3DD13002B Abstract: 3DD13002 Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn 3DD13002B TRANSISTOR（ NPN ） TO-92 FEATURES • power switching applications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol	Original	3DD13002B 200mA 200mA, 100mA 3DD13002B 3DD13002	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR（ NPN ） TO-92 FEATURES • power switching applications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter	Original	3DD13002B	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR（ NPN ） TO-92 FEATURES • power switching applications 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter	Original	3DD13002B 200mA 200mA, 100mA	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002B TO-92 TRANSISTOR（NPN） FEATURE 1.EMITTER Power Switching Applications 2. COLLECTOR MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter 3. BASE	Original	3DD13002B	PDF