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    3G TRANSISTOR Search Results

    3G TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3G TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3g transistor

    Abstract: UAA3536 3g amplifier transistor for 3G UAA3537 3G RF signal processing BGY402E HVQFN16 HVQFN24 UAA3580
    Text: 3G RF chipset Compact, radio chipset for stand-alone UMTS applications and 3G phones For maximum design flexibility, Philips Semiconductors has developed a complete radio chipset for the UMTS RF part of a GSM/3G phone that perfectly complements our GSM/GPRS/


    Original     		PDF UAA3536 UAA3537) 3g transistor 3g amplifier transistor for 3G UAA3537 3G RF signal processing BGY402E HVQFN16 HVQFN24 UAA3580

    qualcomm MSM6280

    Abstract: msm6280 Qualcomm chipset MSM7200 msm7200 mediatek iptv motorola Qualcomm Atheros Atheros wifi mediatek mt huawei gsm
    Text: 2006 ANNUAL REPORT Broadband solutions for wireless & wireline communications 3G ANADIGICS is uniquely positioned to capitalize on the rapidly growing voice, Wireless Comm data and video segments of the broad- Quad Play WiMAX band, 3G, wireless and wireline com-


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    DG09

    Abstract: AN-6088 ICC550 an6088 pae12 25PAE
    Text: www.fairchildsemi.com AN-6088 FAN5902 Power Management Solution for Improving the Power Efficiency of 3G WCDMA RF Power Amplifiers Abstract This application note provides the basics for implementing a Dynamic Voltage Scaling DVS power management technique with 3G WCDMA RF power amplifiers (PAs) to


    Original     		PDF AN-6088 FAN5902 FAN5902, DG09 AN-6088 ICC550 an6088 pae12 25PAE

    CL05A105KP5NNN

    Abstract: CL05B CL05B104K05NNNC CL05B104K CIG21L1R0MNE CL05A105K
    Text: MIC2829 3G/4G HEDGE/LTE PMIC with Six Buck Converters, Eleven LDOs and SIM Card Level Translation General Description The MIC2829 is a highly integrated Power Management Integrated Circuit PMIC designed for 3G/4G (HEDGE/LTE and WiMAX) USB wireless applications. It is


    Original     		PDF MIC2829 MIC2829 M9999-051410-B CL05A105KP5NNN CL05B CL05B104K05NNNC CL05B104K CIG21L1R0MNE CL05A105K

    Untitled

    Abstract: No abstract text available
    Text: MIC2829 3G/4G HEDGE/LTE PMIC with Six Buck Converters, Eleven LDOs and SIM Card Level Translation General Description The MIC2829 is a highly integrated Power Management Integrated Circuit PMIC designed for 3G/4G (HEDGE/LTE and WiMAX) USB wireless applications. It is


    Original     		PDF MIC2829 MIC2829 M9999-051410-B

    CL05B104K05NNNC

    Abstract: CL05B CL05A475MQ5NRN CIG21W2R2MNE CL05A105KP5NNN CL05C121B5NNNC MIC2829 100k resistor network C32-C37 transistor c36
    Text: MIC2829 Evaluation Board 3G/4G HEDGE/LTE PMIC with Six Buck Converters, Eleven LDOs and SIM Card Level Translation General Description The MIC2829 is a PMIC Power Management Integrated Circuit designed for 3G/4G (HEDGE and LTE) modules. It incorporates six DC/DC step-down converters, eleven


    Original     		PDF MIC2829 M9999-060210-A CL05B104K05NNNC CL05B CL05A475MQ5NRN CIG21W2R2MNE CL05A105KP5NNN CL05C121B5NNNC 100k resistor network C32-C37 transistor c36

    TO 48 A IC MP3 PROCESSOR

    Abstract: touchscreen AC97 EH11 ac97 audio chip
    Text: w Efficient audio is essential for low-power 3G mobiles Dudy Sinai Assistant VP of New Product Definition Introduction Many of the design challenges in 3G mobile phones revolve around implementing additional functionality, such as videoconferencing, while prolonging or at least preserving battery life. On the digital side, that has led IC


    Original     		PDF

    3g phone CIRCUIT diagram

    Abstract: 431 regulator pwm 8pin PS08 sd 431 transistor CM3728IS SK12 RF loop antenna 13Mhz
    Text: CM3728 2.5G/3G CELLULAR PHONE BUCK REGULATOR GENERAL DESCRIPTION FEATURES The CM3728 low-dropout, pulse-width-modulated PWM DC-DC buck regulator is optimized to provide power to the PA in 2.5G/3G cellular phones; however, they may be applied in many other applications where high efficiency is a priority. The


    Original     		PDF CM3728 CM3728 3g phone CIRCUIT diagram 431 regulator pwm 8pin PS08 sd 431 transistor CM3728IS SK12 RF loop antenna 13Mhz

    BTM7755G

    Abstract: No abstract text available
    Text: Data Sheet, Rev. 2.0, May 2010 BTM7755G High Current H-Bridge Trilith IC 3G Automotive Power High Current H-Bridge BTM7755G Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF BTM7755G BTM7755G

    BTM7742

    Abstract: No abstract text available
    Text: Data Sheet, Rev. 1.0, May 2010 BTM7742G High Current H-Bridge Trilith IC 3G Automotive Power High Current H-Bridge BTM7742G Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF BTM7742G BTM7742

    BTM7752G

    Abstract: btm7752 IPD50P03P4L-11
    Text: Data Sheet, Rev. 2.0, May 2010 BTM7752G High Current H-Bridge Trilith IC 3G Automotive Power High Current H-Bridge BTM7752G Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF BTM7752G BTM7752G btm7752 IPD50P03P4L-11

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Rev. 1.0, May 2010 BTM7745G High Current H-Bridge Trilith IC 3G Automotive Power High Current H-Bridge BTM7745G Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF BTM7745G

    BTM7742G

    Abstract: BTM7742 PG-DSO-36-29 HS21 HLGF1145
    Text: Data Sheet, Rev. 1.0, May 2010 BTM7742G High Current H-Bridge Trilith IC 3G Automotive Power High Current H-Bridge BTM7742G Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF BTM7742G 726-BTM7742G BTM7742G BTM7742 PG-DSO-36-29 HS21 HLGF1145

    bc857b

    Abstract: BC857C BC857C sot23
    Text: BC857B BC857C SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857B 3F BC857C 3G SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS LOW CURRENT SWITCHING AND GENERAL PURPOSE APPLICATIONS THE NPN COMPLEMENTARY TYPES ARE


    Original     		PDF BC857B BC857C BC858B BC858C OT-23 BC857C BC857C sot23

    BC856BW

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G


    Original     		PDF BC856W OT-323 BC857AW BC856AW BC857BW BC856BW BC857CW BC857W BC858W BC856BW

    3D smd marking

    Abstract: SMD Transistors 3f SMD IC ts 4141 BC856BW SOT SMD IC BC856W-BC858W BC856AW BC856W BC857AW BC857BW
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G


    Original     		PDF BC856W OT-323 BC857AW BC856AW BC857BW BC856BW BC857CW BC857W BC858W 3D smd marking SMD Transistors 3f SMD IC ts 4141 BC856BW SOT SMD IC BC856W-BC858W BC856AW BC856W BC857AW BC857BW

    transistor 5cw

    Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
    Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000


    Original     		PDF CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10

    motherboard repair Chip level

    Abstract: CMOS090 CMOS065 gsm based digital notice board using arm processor baseband GSM BTS 3G CHIP GENERATION TELECOM RF gsm transceiver IC qubic4
    Text: Philips Semiconductors Our comprehensive portfolio RF ASICs Converters Complete portfolio of ASIC services. Right expertise, processes, tools and manufacturing to tackle 3G challenges. Customer-driven DAC & ADC for high performance and system innovations.


    Original     		PDF

    transistor 1345

    Abstract: CA3246E 4460E 1333E
    Text: S CA3227, CA3246 High-Frequency NPN Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz August 1996 Features • Description Gain-Bandwidth Product fT . >3G Hz The CA3227 and CA3246 consist of five general purpose sil­


    OCR Scan     		PDF CA3227, CA3246 CA3227 CA3246 CA3227 transistor 1345 CA3246E 4460E 1333E

    BC856B

    Abstract: BC856 BC856A BC857 BC857A BC857B BC857C BC858 BC858A BC858B
    Text: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors M arking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    OCR Scan     		PDF BC856 BC857 BC858 BC856 BC856A BC856B BC857A BC857B BC857C BC856B BC856A BC857 BC857A BC857B BC857C BC858 BC858A BC858B

    BC856

    Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
    Text: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_


    OCR Scan     		PDF BC856 BC857 BC858 BC856 BC856A BC856B BC857A BC857B BC857C BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B

    Y12t

    Abstract: y12 t
    Text: 33 HARRIS A ugu st 1991 CA3227 CA3246 High-Frequency N -P -N Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz Features Description • Galn-Bandwldth Product f j .>3G H z The CA3227 and CA3246* consist of five general purpose


    OCR Scan     		PDF CA3227 CA3246 CA3246* 16-lead 14-lead Y12t y12 t

    BC856B 3F

    Abstract: 858A
    Text: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors M arking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS A LL DIM ENSIONS IN m m


    OCR Scan     		PDF BC856 BC857 BC858 BC856 BC856A BC856B BC857 BC857A BC857B BC857C BC856B 3F 858A

    Untitled

    Abstract: No abstract text available
    Text: 32E D • 023b3S0 001731e b H S I R NPN Silicon Switching Transistor _ SIE M E N S / SPCLi SEMICONDS -p. 3g- j| SXT 3904 _ • High current gain: 0.1 to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering code for


    OCR Scan     		PDF 023b3S0 001731e T-35-11