Untitled
Abstract: No abstract text available
Text: SOT-23-3L Plastic-Encapsulate Transistors RB411D SOT-23-3L Schottky barrier Diodes FEATURES Small surface mounting type Low reverse current and low forward voltage High reliability Marking:D3E Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OT-23-3L
RB411D
OT-23-3L
500mA
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DS099-2
Abstract: DS099 XCF00S FGG320
Text: ds313.fm Page 1 Wednesday, November 3, 2004 5:48 PM Spartan-3L Low Power FPGA Family R DS313 v1.0 November 3, 2004 Introduction • Spartan -3L Field-Programmable Gate Arrays (FPGAs) consume less static current than corresponding members of the standard Spartan-3 family. Spartan-3L devices provide the identical function, features, timing, and pinout of the
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ds313
DS313
DS099-1,
DS099-2,
DS099-3,
DS099-4,
DS099-2
DS099
XCF00S
FGG320
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STC405
Abstract: IC DATE CODE
Text: STC405 NPN Silicon Transistor Features PIN Connection • Low saturation switching application • Voltage regulator application • High Voltage : VCEO=60V Min. 1 2 3 TO-220F-3L Ordering Information Type NO. Marking Package Code STC405 STC405 TO-220F-3L Marking Diagram
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STC405
O-220F-3L
SDB20D45
KSD-T0O064-001
STC405
IC DATE CODE
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2391 TRANSISTOR NPN SOT-89-3L FEATURES Low VCE(sat) 1.BASE 123 2.COLLECTOR Marking: DT 3.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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OT-89-3L
2SD2391
OT-89-3L
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1740 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES z High breadown voltage z Excellent hFE linearlity 2. COLLECTOR 3. EMITTER Marking: AK MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-89-3L
2SA1740
OT-89-3L
-300V
-50mA
-50mA
-10mA
-150V
-50mA,
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors RB411D SOT-23-3L Schottky barrier Diodes FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability Marking:D3E Maximum Ratings@TA=25℃
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OT-23-3L
RB411D
OT-23-3L
500mA
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Untitled
Abstract: No abstract text available
Text: STC405 NPN Silicon Transistor Features PIN Connection • Low saturation switching application • Voltage regulator application • High Voltage : VCEO=60V Min. 1 2 3 TO-220F-3L Ordering Information Type NO. Marking Package Code STC405 STC405 TO-220F-3L Absolute maximum ratings
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STC405
O-220F-3L
KSD-T0O064-000
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L HM4033 TRANSISTOR PNP 1. BASE FEATURES z High Current z General Purpose Amplifier Applications 2. COLLECTOR 3. EMITTER MARKING:H4033 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-89-3L
OT-89-3L
HM4033
H4033
-150mA
-15mA
-500mA
-50mA
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2SA1037AK
Abstract: 2SC2412K transistor marking fq
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1037AK SOT-23-3L TRANSISTOR PNP FEATURES z Excellent hFE linearity. z Complments the 2SC2412K. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23-3L
2SA1037AK
OT-23-3L
2SC2412K.
-50mA
30MHz
2SA1037AK
2SC2412K
transistor marking fq
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2SA1036K
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1036K SOT-23-3L TRANSISTOR PNP FEATURES z Large IC. IC= -500 mA z Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR
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OT-23-3L
2SA1036K
OT-23-3L
-100A
-10mA
-100mA
-20mA
100MHz
2SA1036K
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A92 TRANSISTOR PNP 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A92 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-89-3L
OT-89-3L
-200V
-300V
-10mA
-80mA
-20mA
-10mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BF622 TRANSISTOR NPN 1. BASE FEATURES z Low Current z High Voltage 2. COLLECTOR 3. EMITTER AAPLICATIONS z Video Output Stages MARKING:DA MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-89-3L
OT-89-3L
BF622
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BF622 TRANSISTOR NPN 1. BASE FEATURES z Low Current z High Voltage 2. COLLECTOR 3. EMITTER AAPLICATIONS z Video Output Stages MARKING:DA MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-89-3L
OT-89-3L
BF622
100MHz
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MARKING D3E
Abstract: D3E diode RB411D
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors RB411D SOT-23-3L Schottky barrier Diodes FEATURES Small surface mounting type Low reverse current and low forward voltage High reliability Marking:D3E Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OT-23-3L
RB411D
OT-23-3L
500mA
MARKING D3E
D3E diode
RB411D
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1013 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURE y High voltage y Large continuous collector current capability 2. COLLECTOR 1 2 23 3. EMITTER MARKING: 1013 MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted )
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OT-89-3L
2SA1013
OT-89-3L
200mA
-500m
-50mA
-200mA
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Untitled
Abstract: No abstract text available
Text: 2SC2412K SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features Low Cob ,Cob = 2.0 pF (Typ). Complements the 2SA1037AK 2.80 1.60 MARKING : BQ, BR, BS 0.15 1.90 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol
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2SC2412K
OT-23-3L
OT-23-3L
2SA1037AK
100MHz
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2SA1162
Abstract: 2SC2712
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SA1162 TRANSISTOR PNP FEATURES z Low noise : NF= 1dB(Typ.),10dB (Max.) z Complementary to 2SC2712. z Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG
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OT-23-3L
OT-23-3L
2SA1162
2SC2712.
-100mA
-10mA
2SA1162
2SC2712
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BR A44
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A44 TRANSISTOR NPN 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A44 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-89-3L
OT-89-3L
100mA
BR A44
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate DIODE RB400D SOT-23-3L Schottky barrier Diodes FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability + Marking:D3A Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OT-23-3L
RB400D
OT-23-3L
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Untitled
Abstract: No abstract text available
Text: KST42 / KST43 NPN Epitaxial Silicon Transistor Features • High-Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST42MTF 1D SOT-23 3L Tape and Reel KST43MTF 1E SOT-23 3L Tape and Reel
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KST42
KST43
OT-23
KST42MTF
OT-23
KST43MTF
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2SA1036K
Abstract: No abstract text available
Text: 2SA1036K SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 3. COLLECTOR 1.17 Features 2.80 Large IC. IC= -500 mA Low VCE(sat). Ideal for low-voltage operation. 1.60 0.15 1.90 MARKING : HP, HQ, HR Dimensions in inches and (millimeters)
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2SA1036K
OT-23-3L
OT-23-3L
-100A
-10mA
-100mA
-20mA
100MHz
2SA1036K
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L HM879 TRANSISTOR NPN 1. BASE FEATURES z High Current z Low Voltage z General Purpose Amplifier Applications 2. COLLECTOR 3. EMITTER MARKING:879 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-89-3L
OT-89-3L
HM879
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Untitled
Abstract: No abstract text available
Text: 2SA1037AK SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 3. COLLECTOR 1.17 Features 2.80 Excellent hFE linearity. Complments the 2SC2412K. 1.60 0.15 MARKING : FQ, FR, FS 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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2SA1037AK
OT-23-3L
OT-23-3L
2SC2412K.
-50mA
30MHz
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2SA162
Abstract: No abstract text available
Text: 2SA162 SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features Low noise : NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712. Small Package. 2.80 1.60 0.15 1.90 MARKING: SO , SY , SG Dimensions in inches and (millimeters)
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2SA162
OT-23-3L
OT-23-3L
2SC2712.
-100u
-100mA
-10mA
2SA162
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