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    3MN03S Price and Stock

    Rochester Electronics LLC 3MN03SF-TL-E

    BIP NPN 30MA 20V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 3MN03SF-TL-E Bulk 192,000 6,662
    • 1 -
    • 10 -
    • 100 -
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    • 10000 $0.05
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    onsemi 3MN03SF-TL-E

    3MN03SF - Bipolar NPN Transistor, 30MA 20V '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 3MN03SF-TL-E 192,000 1
    • 1 $0.0433
    • 10 $0.0433
    • 100 $0.0407
    • 1000 $0.0368
    • 10000 $0.0368
    		Buy Now

    3MN03S Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3MN03S Sanyo Semiconductor 3MN03S Original PDF
    3MN03SF Sanyo Semiconductor TRANS GP BJT NPN 20V 0.03A 3SSFP Original PDF
    3MN03SF-TL-E SANYO Electric RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 20V 30MA 3SSFP Original PDF

    3MN03S Datasheets Context Search

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    3MN03S

    Abstract: ITR05148 ITR05149 ITR05150 ITR05152 marking WA
    Text: 3MN03S Ordering number : EN8392A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 3MN03S High-Frequency General-Purpose Amplifier Applications Features • • Ultrasmall-sized package enabiling compactness and slimness of sets. High fT and small Cre fT=320MHz typ, Cre=0.95pF typ .


    Original     		PDF 3MN03S EN8392A 320MHz 3MN03S ITR05148 ITR05149 ITR05150 ITR05152 marking WA

    3MN03SF

    Abstract: Marking WA
    Text: 3MN03SF Ordering number : EN8651A NPN Epitaxial Planar Silicon Transistor 3MN03SF High-Frequency General-Purpose Amplifier Applications Features • Small package allows applied sets to be made small and thin. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF 3MN03SF EN8651A 600mm2 3MN03SF Marking WA

    Untitled

    Abstract: No abstract text available
    Text: 3MN03S Ordering number : EN8392A NPN Epitaxial Planar Silicon Transistor 3MN03S High-Frequency General-Purpose Amplifier Applications Features • • Ultrasmall-sized package enabiling compactness and slimness of sets. High fT and small Cre fT=320MHz typ, Cre=0.95pF typ .


    Original     		PDF 3MN03S EN8392A 320MHz 600mm2

    Untitled

    Abstract: No abstract text available
    Text: 3MN03S Ordering number : ENN8392 NPN Epitaxial Planar Silicon Transistor 3MN03S High-Frequency General-Purpose Amplifier Applications Features • • Ultrasmall-sized package enabiling compactness and slimness of sets. High fT and small Cre fT=320MHz typ, Cre=0.95pF typ .


    Original     		PDF ENN8392 3MN03S 320MHz 600mm2

    3MN03SF

    Abstract: 3MN03S
    Text: 3MN03SF Ordering number : EN8651A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 3MN03SF High-Frequency General-Purpose Amplifier Applications Features • Small package allows applied sets to be made small and thin. Specifications


    Original     		PDF 3MN03SF EN8651A 600mm2 3MN03SF 3MN03S

    3MN03SF

    Abstract: 3pg14
    Text: 3MN03SF 注文コード No. N 8 6 5 1 A 三洋半導体データシート 半導体ニューズ No.N8651 とさしかえてください。 3MN03SF NPN エピタキシァルプレーナ型シリコントランジスタ 高周波一般増幅用 特長 ・小型パッケージのためセットの小型化 , 薄型化が可能である。


    Original     		PDF 3MN03SF N8651 600mm2 100MHz TB-00002142 D2805AA TB-00001950 IT09502 3MN03SF 3pg14

    Untitled

    Abstract: No abstract text available
    Text: 3MN03SF Ordering number : EN8651 NPN Epitaxial Planar Silicon Transistor 3MN03SF High-Frequency General-Purpose Amplifier Applications Features • Small package allows applied sets to be made small and thin. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF 3MN03SF EN8651 600mm2

    3MN03S

    Abstract: ITR05148 ITR05149 ITR05150 ITR05152
    Text: 3MN03S 注文コード No. N 8 3 9 2 A 三洋半導体データシート 半導体ニューズ No.N8392 とさしかえてください。 3MN03S NPN エピタキシァルプレーナ型シリコントランジスタ 高周波一般増幅用 特長 ・小型パッケージのためセットの小型化が可能である。


    Original     		PDF 3MN03S N8392 320MHz 600mm2 100MHz 321MHz IT09882 3MN03S ITR05148 ITR05149 ITR05150 ITR05152

    3MN03S

    Abstract: ITR05148 ITR05149 ITR05150 ITR05152
    Text: 3MN03S 注文コード No. N 8 3 9 2 3MN03S NPN エピタキシァルプレーナ型シリコントランジスタ 高周波一般増幅用 特長 ・小型パッケージのためセットの小型化が可能である。 ・fT が高く Cre が小さい（fT=320MHz typ, Cre=0.95pF typ）


    Original     		PDF 3MN03S 320MHz 600mm2 100MHz 71505AA TB-00001531 IT09882 3MN03S ITR05148 ITR05149 ITR05150 ITR05152

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    smd transistor marking 12W

    Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103
    Text: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain，Low Gain，Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・|S21e|2=17dB＠2GHz 0.3


    Original     		PDF MCH4009 17dB2GHz SC-72 SC-43 SC-51 O-226 SC-71 O-126 O-92MOD smd transistor marking 12W SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103