3N10L26
Abstract: D35A IPD35N10S3L-26
Text: IPD35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 26 mW ID 35 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)
|
Original
|
PDF
|
IPD35N10S3L-26
PG-TO252-3-11
3N10L26
3N10L26
D35A
IPD35N10S3L-26
|
3N10L26
Abstract: IPD35N10S3L-26 3N10L PG-TO252-3-11 d35a
Text: IPD35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 26 mΩ ID 35 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
|
Original
|
PDF
|
IPD35N10S3L-26
PG-TO252-3-11
3N10L26
3N10L26
IPD35N10S3L-26
3N10L
PG-TO252-3-11
d35a
|
3N10L26
Abstract: No abstract text available
Text: IPD35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 26 mW ID 35 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)
|
Original
|
PDF
|
IPD35N10S3L-26
PG-TO252-3-11
PG-TO252-3-11
3N10L26
3N10L26
|
3N10L26
Abstract: IPB35N10S3L-26 3N10L IPB35N ipb35n10s3l IPB35N10
Text: IPB35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 26.3 mW ID 35 A Features PG-TO263-3-2 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
|
Original
|
PDF
|
IPB35N10S3L-26
PG-TO263-3-2
PG-TO263-3-2
3N10L26
3N10L26
IPB35N10S3L-26
3N10L
IPB35N
ipb35n10s3l
IPB35N10
|