IPD30N10S3L
Abstract: IPD30N10 IPD30N10S3 3N10L34 IPD30N10S3L-34 GD25Q 3N10L PG-TO252-3-11
Text: IPD30N10S3L-34 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 31 mΩ ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPD30N10S3L-34
PG-TO252-3-11
3N10L34
IPD30N10S3L
IPD30N10
IPD30N10S3
3N10L34
IPD30N10S3L-34
GD25Q
3N10L
PG-TO252-3-11
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3N10L34
Abstract: No abstract text available
Text: IPD30N10S3L-34 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 31 mW ID 30 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)
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Original
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PDF
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IPD30N10S3L-34
PG-TO252-3-11
3N10L34
3N10L34
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3N10L34
Abstract: IPD30N10S3L-34
Text: IPD30N10S3L-34 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 31 mΩ ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
|
Original
|
PDF
|
IPD30N10S3L-34
PG-TO252-3-11
PG-TO252-3-11
3N10L34
3N10L34
IPD30N10S3L-34
|