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    3N120 Search Results

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    3N120 Price and Stock

    Broadcom Limited AEMD-LY3N-12002

    LED WHITE SMD 110X50DE
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    DigiKey AEMD-LY3N-12002 Digi-Reel 8,000 1
    • 1 $1.63
    • 10 $1.031
    • 100 $1.63
    • 1000 $0.60574
    • 10000 $0.60574
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    AEMD-LY3N-12002 Cut Tape 8,000 1
    • 1 $1.63
    • 10 $1.031
    • 100 $1.63
    • 1000 $0.60574
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    AEMD-LY3N-12002 Reel 8,000 1,000
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    • 1000 $0.56884
    • 10000 $0.4877
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    Avnet Americas AEMD-LY3N-12002 16 Weeks 8,000
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    EBV Elektronik AEMD-LY3N-12002 18 Weeks 1,000
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    Qorvo UJ3N120035K3S

    JFET N-CH 1200V 63A TO247-3
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    DigiKey UJ3N120035K3S Tube 4,374 1
    • 1 $27.27
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    • 1000 $18.2625
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    Mouser Electronics UJ3N120035K3S 1,144
    • 1 $27.27
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    • 100 $20.45
    • 1000 $18.83
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    Avnet Silica UJ3N120035K3S 39 Weeks 600
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    Qorvo UJ3N120065K3S

    JFET N-CH 1.2KV 34A TO247-3
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    DigiKey UJ3N120065K3S Tube 2,324 1
    • 1 $14.78
    • 10 $14.78
    • 100 $14.78
    • 1000 $9.9
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    Avnet Americas UJ3N120065K3S Box 12 Weeks 600
    • 1 $14.78
    • 10 $14.78
    • 100 $11.09
    • 1000 $9.5
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    Mouser Electronics UJ3N120065K3S 705
    • 1 $15.26
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    • 100 $11.67
    • 1000 $9.35
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    Avnet Silica UJ3N120065K3S 39 Weeks 600
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    Littelfuse Inc IXTA3N120-TRL

    MOSFET N-CH 1200V 3A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTA3N120-TRL Digi-Reel 2,086 1
    • 1 $8.09
    • 10 $5.769
    • 100 $8.09
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    IXTA3N120-TRL Reel 1,600 800
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    Newark IXTA3N120-TRL Cut Tape 791 1
    • 1 $7.96
    • 10 $6.82
    • 100 $5.69
    • 1000 $5.69
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    Infineon Technologies AG IGB03N120S7ATMA1

    IGBT TRENCH 1200V 9A TO263-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IGB03N120S7ATMA1 Digi-Reel 995 1
    • 1 $1.57
    • 10 $1.147
    • 100 $0.9256
    • 1000 $0.83692
    • 10000 $0.83692
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    IGB03N120S7ATMA1 Cut Tape 995 1
    • 1 $1.57
    • 10 $1.147
    • 100 $0.9256
    • 1000 $0.83692
    • 10000 $0.83692
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    Mouser Electronics IGB03N120S7ATMA1 980
    • 1 $1.66
    • 10 $1.38
    • 100 $1.1
    • 1000 $0.79
    • 10000 $0.705
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    Find more 3N120 price and stock on Findchips.com

    3N120 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3N120 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    3N120 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N120 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N120 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    3N120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3N120

    Abstract: on6017 IXTP3N120
    Text: High Voltage Power MOSFETs IXTA 3N120 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous ±20 V VGSM Transient ±30 V VDSS


    Original     		PDF 3N120 O-220 728B1 123B1 728B1 065B1 3N120 on6017 IXTP3N120

    3n120

    Abstract: 3N110 98844
    Text: ADVANCE TECHNICAL INFORMATION High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 3N120 3N110 1200 1100 V V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 3N120 3N110 3N110 O-220 O-263 98844

    3N120

    Abstract: transistor tl 187 125OC 3N110 IXTP IXTP IXTP IXTP
    Text: High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 3N120 3N110 1200 1100 V V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 3N120 3N110 1200 1100 V V VGS


    Original     		PDF 3N120 3N110 O-220 125OC 728B1 3N120 transistor tl 187 125OC 3N110 IXTP IXTP IXTP IXTP

    3n120

    Abstract: DS99025 125OC 3N110
    Text: High Voltage Power MOSFETs V DSS I D25 VDS on IXTH 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt = 1200 V = 3A = 4.5 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 3N120 3N110 1200 1100 V V VDGR


    Original     		PDF 3N120 3N110 O-247 125OC 728B1 123B1 728B1 3n120 DS99025 125OC 3N110

    DS99025

    Abstract: No abstract text available
    Text: High Voltage Power MOSFETs V DSS I D25 VDS on IXTH 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt = 1200 V = 3A = 4.5 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 3N120 3N110 1200 1100 V V VDGR


    Original     		PDF 3N120 3N110 O-247 125OC 728B1 123B1 728B1 DS99025

    IXFA 3N120

    Abstract: 3N120
    Text: IXFA 3N120 IXFP 3N120 HiPerFETTM Power MOSFETs VDSS =1200 V = 3A ID25 RDS on = 4.5 Ω trr ≤ 300 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 3N120 O-220 IXFA 3N120 3N120

    to-220 weight

    Abstract: 3N120
    Text: IXFA 3N120 IXFP 3N120 HiPerFETTM Power MOSFETs VDSS =1200 V = 3A ID25 RDS on = 4.5 Ω trr ≤ 300 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 3N120 O-220 728B1 123B1 728B1 065B1 to-220 weight 3N120

    3N120

    Abstract: on6017
    Text: High Voltage Power MOSFETs V DSS I D25 VDS on IXTH 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt = 1200 V = 3A = 4.5 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 3N120 O-247 728B1 123B1 728B1 065B1 3N120 on6017

    Untitled

    Abstract: No abstract text available
    Text: High Voltage Power MOSFETs IXTA 3N120 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25


    Original     		PDF 3N120 O-220 728B1 123B1 728B1 065B1

    3N120

    Abstract: on6017
    Text: High Voltage Power MOSFETs IXTA 3N120 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous ±20 V VGSM Transient ±30 V VDSS


    Original     		PDF 3N120 O-220 728B1 123B1 728B1 065B1 3N120 on6017

    Untitled

    Abstract: No abstract text available
    Text: IXFA 3N120 IXFP 3N120 HiPerFETTM Power MOSFETs VDSS =1200 V ID25 = 3A RDS on = 4.5 Ω trr ≤ 300 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200


    Original     		PDF 3N120 O-220

    98844

    Abstract: No abstract text available
    Text: High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt VDSS ID25 RDS on 1200 V 1100 V 3A 3A 4.5 Ω 4.0 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 3N120 3N110 3N110 O-220 O-263 125OC 98844

    3n120

    Abstract: 125OC 3N110 IXTP3N120
    Text: High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt VDSS ID25 RDS on 1200 V 1100 V 3A 3A 4.5 Ω 4.0 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 3N120 3N110 O-220 VDSS40 125OC 3n120 125OC 3N110 IXTP3N120

    3n1201

    Abstract: No abstract text available
    Text: HARD METRIC CONNECTOR SPECIFICATIONS 2H Seri es Rec., Type AB 2.0mm [.078”] Pitch 5 Row s Mechanical Mating Force: 0.75N max. Unmating Force: 0.15N min. Durability: 250 Cycles Electrical Voltage Rating: 500V Current Rating: 1A Contact Resistance: 20mΩ max.


    Original     		PDF 10000M 2H2525 3-N1201 3n1201

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


    Original     		PDF

    Bendix Transistors

    Abstract: 2N1149 RCA 2n1184a 2N1152 2N1151 2N1150 RCA 2N1174 transitron Emihus 2N1193
    Text: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu


    Original     		PDF ST3042 ST3043 3N120 3N121 2N332 2N333 2N335 2N336 2N334 2SCl16 Bendix Transistors 2N1149 RCA 2n1184a 2N1152 2N1151 2N1150 RCA 2N1174 transitron Emihus 2N1193

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: GENERAL DIODE CORP flb DlT| 3 0 ^ 7 5 0 DOQDB14 □ DUAL EMITTER INTEGRATED CHOPPERS Case Style— TO-72 ^£ % o S , % 200 @ 2 100 @ 2 50 @ 2 200 @ 2 5 5 5 S 5 3NS7 3NSI 3N88A 3N69 3N70 100 S 5 .5 5 5 @ 5 @ 5 @ 10 @ 5 @ 5 3N71 \3N72 3N73 3N74 3N75 S 5 S 2


    OCR Scan     		PDF DOQDB14 3N88A \3N72 3N120 3N121 STSB10 STS611 ST5612 STSB13 STS614

    Untitled

    Abstract: No abstract text available
    Text: TELED.YNE components 2flE D • öT17tiQ5 NPN/PNP DUAL EMinER CHOPPER BI-POLAR TRANSISTORS DGObS^a 3 T_B I T -3 '7- a 3 3N62 to 3N136 GEOMETRY 460 GEOMETRY 481 3N74-3N76 AVAILABLE AS JANJAN-TXJANTX-V * LOW OFFSET VOUAGE TO 30 mV(PNP)/10mV(NPN) HIGH BV 6 0 VOUS


    OCR Scan     		PDF T17tiQ5 3N136 3N74-3N76) /10mV 3N119 3N120 3N121 3N123 3N129 3N130

    LT3973-3.3

    Abstract: IN4012 in401 IN1730 IN1118 IN3288 in2063 IM361 IN-17 1N1731
    Text: ^ discrete devices | jemitronicr hot line TO LL FREE NUM BER 800-777-3960 silicon rectifiers stud mounted silicon power rectifiers DO-4 case style — Maximum Peak Reverse Voltage volts Type Maximum Average Forward Current (Amps) @ Case Temp. (°C ) Maximum


    OCR Scan     		PDF 1N1203 1N1203A 1N1203B 1N1204 1N1204A 1N1204B LT3973-3.3 IN4012 in401 IN1730 IN1118 IN3288 in2063 IM361 IN-17 1N1731

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    SN76477

    Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
    Text: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p


    OCR Scan     		PDF 2114L 6116P3 6116LP3 AY-3-1270 AY-3-1350 AY-3-8910 AY-3-8912 AY-5-1230 CA3080E CA3130E SN76477 TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131