transistor 2SB688
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 2SD718 TO – 3P TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage z Complementary to 2SB688 2. COLLECTOR 3. EMITTER APPLICATIONS z Power Amplifier Applications
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2SD718
2SB688
500mA
transistor 2SB688
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036a transistor
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors TO-3P 2SC5287 TRANSISTOR NPN 1. BASE FEATURES •High Voltage Switchihg Transistor 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol
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2SC5287
350mA
2SC5287
036a transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 2SC5198 TO – 3P TRANSISTOR NPN 1. BASE FEATURES z Low Collector Saturation Voltage z Good Linearity of hFE 2. COLLECTOR 3. EMITTER APPLICATIONS z Power Amplifier Applications
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2SC5198
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors KTD998 TO – 3P TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage z High Current and Power Capability z High Power Amplifier Application 2. COLLECTOR 3. EMITTER
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KTD998
500mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 2SC5287 TO – 3P TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage z High Speed Switching 2. COLLECTOR 3. EMITTER APPLICATIONS z For Switching Regulator and General Purpose Applications
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2SC5287
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TRANSISTOR C 2026
Abstract: 2SB817E 2SB817e equivalent AH TRANSISTOR transistor PNP how to test transistor transistor 1503 mexico transistor power 2sb817
Text: Power Transistor PNP 2SB817E Power Transistor (PNP) Features • 2SB817E transistor is designed for use in general purpose power amplifier, application TO-3P Mechanical Data Case: TO-3P, Plastic Package Terminals: Weight: Plated leads solderable per MIL-STD-750, Method 2026
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2SB817E
2SB817E
MIL-STD-750,
TRANSISTOR C 2026
2SB817e equivalent
AH TRANSISTOR
transistor PNP
how to test transistor
transistor 1503
mexico transistor power
2sb817
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 3DA5200B TO – 3P TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage z High Current and Power Capacity 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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3DA5200B
800mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 3CA1943 TO – 3P TRANSISTOR PNP 1. BASE FEATURES z High Breakdown Voltage z General Purpose Switching and Amplification 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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3CA1943
-50mA
-120V
-800mA
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300W TRANSISTOR AUDIO AMPLIFIER
Abstract: MG6331 1455 audio output TRANSISTOR NPN npn transistor SEMELAB LE17 MG9411 "NPN Transistor" MG6331-R
Text: SILICON EPITAXIAL PLANAR NPN TRANSISTOR MG6331, MG6331-R • TO-3P Plastic Package • Complimentary PNP – MG9411 • Designed specifically for audio power amplifier applications • Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package
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MG6331,
MG6331-R
MG9411
MG6331
300W TRANSISTOR AUDIO AMPLIFIER
MG6331
1455
audio output TRANSISTOR NPN
npn transistor
SEMELAB
LE17
MG9411
"NPN Transistor"
MG6331-R
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PRSS0003ZA-A
Abstract: 3p transistor PRSS0004ZE-A TO3PFMV
Text: PM519 Package name PVC Polyvinyl chloride Treatment Antistatic Magazine material Maximum storage No. Transistor/Magazine Packing form TO-3P PRSS0004ZE-A TO-3P, TO-3PV 30 Non dry pack TO-3PFM PRSS0003ZA-A TO-3PFM, TO-3PFMV 30 Non dry pack Unit : mm +2 -2
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PM519
PRSS0004ZE-A
PRSS0003ZA-A
PRSS0003ZA-A
3p transistor
PRSS0004ZE-A
TO3PFMV
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300W TRANSISTOR AUDIO AMPLIFIER
Abstract: "PNP Transistor" MG9411 1455 properties of transistor pnp 9099 SEMELAB LE17 MG6331
Text: SILICON EPITAXIAL PLANAR PNP TRANSISTOR MG9411, MG9411-R • TO-3P Plastic Package • Complimentary NPN – MG6331 • Designed specifically for audio power amplifier applications • Highest Current audio bipolar available on the market with widest Safe Operating Area in TO-3P package
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MG9411,
MG9411-R
MG6331
MG9411
-230V
-260V
SymMG9411
300W TRANSISTOR AUDIO AMPLIFIER
"PNP Transistor"
MG9411
1455
properties of transistor pnp
9099
SEMELAB
LE17
MG6331
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP30G120W-HF-3 N-Channel Insulated Gate Bipolar Power Transistor VCES 1200V High Speed Switching C Low Saturation Voltage 30A IC Typical VCE sat = 3.0V at IC=30A RoHS-compliant halogen-free TO-3P package G C C G E TO-3P E
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AP30G120W-HF-3
100oC
AP30G120
30G120W
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED SWITCHING TRANSISTORS FX series FTO-220 ITO-220 TO-220 ITO-3P MTO-3L MTO-3P Bipolar transistors NPN Absolute Maximum Ratings Electrical Characteristics VRM VCEO VEBO IC IB PT Tstg TJ VCEO (sus) (min) [V] [V] [V] [A] [A] [W] [˚C] [˚C] [V] 3 1
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FTO-220
ITO-220
O-220
2SC4051
ITO-220
2SC4663
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Transistor 126
Abstract: transistor GR 345
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-3P 3 leads Thru-hole Fully Isolated Plastic Package Package Outline, Packaging and Handling Information Continental Device India Limited Data Sheet Page 1 of 5 TO-3P Package, Packaging and Handling
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ISO/TS16949
C-120
DrawingRev151001
Transistor 126
transistor GR 345
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2SC2563
Abstract: 2SA1093
Text: SavantIC Semiconductor Product Specification 2SA1093 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SC2563 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier applicatios PINNING PIN DESCRIPTION
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2SA1093
2SC2563
-120V;
2SC2563
2SA1093
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2sc3306
Abstract: 7 pin ic switching DC DC converter 5v to 400V
Text: Inchange Semiconductor Product Specification 2SC3306 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P I package ・Collector-emitter sustaining voltageVCEO(sus)=400V(Min) ・Fast switching times APPLICATIONS ・Switching regulator and high voltage
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2SC3306
2sc3306
7 pin ic switching
DC DC converter 5v to 400V
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2SD718
Abstract: 2sd718 amplifier AMPLIFIER 2SD718 2SB688
Text: Inchange Semiconductor Product Specification 2SD718 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P I package ・Complement to type 2SB688 APPLICATIONS ・Power amplifier applications ・Recommend for 45~50W audio frequency amplifier output stage
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2SD718
2SB688
2SD718
2sd718 amplifier
AMPLIFIER 2SD718
2SB688
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2SC4531
Abstract: No abstract text available
Text: Product Specification www.jmnic.com 2SC4531 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P H IS package ・High speed ・High voltage ・Low saturation voltage ・Bult-in damper type APPLICATIONS ・Horizontal deflection output applications PINNING
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2SC4531
19000pF
2SC4531
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2SD2386
Abstract: 2SB1557 NPN POWER DARLINGTON TRANSISTORS
Text: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION •With TO-3P I package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION
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2SD2386
2SB1557
2SD2386
2SB1557
NPN POWER DARLINGTON TRANSISTORS
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Untitled
Abstract: No abstract text available
Text: Darlington Transistors /V / / y A -/<\ // " V ¿/ Darlington Power Transistors ITO-220 TO-220 ITO-3P MTO-3P Bipolar transistors Electrical Characteristics Absolute Maximum Ratings VcEO Type No. VcBO VcEO [V] [V ] 100 100 200 200 100 100 200 200 100 100 200
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OCR Scan
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ITO-220
O-220
O-220
150max)
ITO-220
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PDF
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Untitled
Abstract: No abstract text available
Text: Darlington Transistors Darlington Power Transistors ITO-220 TO-220 ITO-3P MTO-3P Bipolar transistors Absolute Maximum Ratings Electrica Characteristics VcEO VcBO VcEO V ebo lc Ib Pi Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [°C] [ ”C ] 2SD1022 100 100 1023
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OCR Scan
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ITO-220
O-220
2SD1022
2SB1282
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PDF
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ITO-220
Abstract: No abstract text available
Text: High Speed Switching Transistors FX series ITO-220 TO-220 ITO-3P MTO-3P Bipolar transistors NPN Absolute Maximum Ratings Electrical Characteristics VcEO V be ft ton VcE 0jc ts tf (sat) (sat) (min) (max) (max) (max) (typ) (max) (max) (max) [V ] [V] fc/w] [MHz] U s ]
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OCR Scan
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ITO-220
O-220
2SC4051
O-220
ITO-220
FTO-220
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PDF
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Untitled
Abstract: No abstract text available
Text: High Speed Switching Transistors . ITO-220 TO-220 IT0-3P MT0-3P Bipolar transistors NPN Absolute Maximum Ratings Type No. Electrical Characteristics VcBO VcEO V ebo Ic Ib Pr Tstg Tj V CEO (sus) (min) [V ] [V ] [V ] [A] [A ] [W ] re i rc ] [V ] h FE (min)
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OCR Scan
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ITO-220
O-220
O-220
FTO-220
ITO-220
2SC4663
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PDF
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s1854
Abstract: toshiba f5d BRIDGE RECTIFIER TOSHIBA 3B F0R3D S6565G BRIDGE RECTIFIER TOSHIBA 3b 4 f0r3b 4G4B44 1D4B42 3529A
Text: — wtmmmmmmmm TOSHIBA 9. Power Supply Systems 9-1 4 0 0 ~ 5 0 0 V Switching Transistors ^ ^ \P a c k a g e lC A ^ 2 5 \ T 0 -2 2 0 A B TO -2 20 IS T O -3 P II] TO-3P (N) TO-3P (L i - 2SC2552 2SC3560/1 # 2 S K 5 2 7 /8 # - - 2SC2553 S 3529A # 2 S K 5 3 0 /1 #
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2SC3560/1
2SC3497
2SC3626
2SC3562
2SC2552
2SC2553
2SC3625
2SC2555
2SC3306
2SK693#
s1854
toshiba f5d
BRIDGE RECTIFIER TOSHIBA 3B
F0R3D
S6565G
BRIDGE RECTIFIER TOSHIBA 3b 4
f0r3b
4G4B44
1D4B42
3529A
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