Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK1775
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching R07DS0088EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)
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RJP60D0DPM
R07DS0088EJ0200
PRSS0003ZA-A
impeda9044
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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RJK2009
Abstract: RJK2009DPM PRSS0003ZA-A RJK2009DPM-E
Text: RJK2009DPM Silicon N Channel MOS FET High Speed Power Switching REJ03G0474-0200 Rev.2.00 Aug.09.2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003ZA-A Package name: TO-3PFM D 1. Gate
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RJK2009DPM
REJ03G0474-0200
PRSS0003ZA-A
RJK2009
RJK2009DPM
PRSS0003ZA-A
RJK2009DPM-E
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Untitled
Abstract: No abstract text available
Text: RJK5015DPM Silicon N Channel MOS FET High Speed Power Switching REJ03G1753-0100 Rev.1.00 Oct 26, 2009 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003ZA-A Package name: TO-3PFM D 1. Gate
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RJK5015DPM
REJ03G1753-0100
PRSS0003ZA-A
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RJH60
Abstract: RJH60D0 PRSS0003ZA-A RJH60D0DPM-00
Text: Preliminary Datasheet RJH60D0DPM Silicon N Channel IGBT Application: Inverter R07DS0156EJ0100 Rev.1.00 Sep 28, 2010 Features • Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
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RJH60D0DPM
R07DS0156EJ0100
PRSS0003ZA-A
em9044
RJH60
RJH60D0
PRSS0003ZA-A
RJH60D0DPM-00
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RJH60
Abstract: PRSS0003ZA-A rjh60d
Text: Preliminary Datasheet RJH60D6DPM Silicon N Channel IGBT Application: Inverter R07DS0175EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)
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RJH60D6DPM
R07DS0175EJ0200
PRSS0003ZA-A
em9044
RJH60
PRSS0003ZA-A
rjh60d
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK6018DPM R07DS0131EJ0200 Rev.2.00 Jun 21, 2012 600V - 30A - MOS FET High Speed Power Switching Features • Low on-resistance RDS on = 0.2 typ. (at ID = 15 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching
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RJK6018DPM
R07DS0131EJ0200
PRSS0003ZA-A
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rjp60d
Abstract: No abstract text available
Text: Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching R07DS0088EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)
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RJP60D0DPM
R07DS0088EJ0200
PRSS0003ZA-A
rjp60d
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RJP60V0DPM
Abstract: No abstract text available
Text: Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application: Inverter R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Features • High breakdown-voltage Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
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RJP60V0DPM
R07DS0669EJ0100
PRSS0003ZA-A
RJP60V0DPM
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60D5DPM 600V - 37A - IGBT Application: Inverter R07DS0174EJ0200 Rev.2.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)
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RJH60D5DPM
R07DS0174EJ0200
PRSS0003ZA-A
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RJK6015DPM
Abstract: RJK6015DPM-00-T1 PRSS0003ZA-A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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BCR20RM-30LA
Abstract: PRSS0003ZA-A REJ03G1725-0100
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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H5N2802PF
Abstract: PRSS0003ZA-A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK2008
Abstract: 2SK2008-E PRSS0003ZA-A
Text: 2SK2008 Silicon N Channel MOS FET REJ03G0992-0200 Previous: ADE-208-1340 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, motor control
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2SK2008
REJ03G0992-0200
ADE-208-1340)
PRSS0003ZA-A
2SK2008
2SK2008-E
PRSS0003ZA-A
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to3pfm
Abstract: PRSS0003ZA-A RJK6015DPM RJK6015DPM-00-T1
Text: RJK6015DPM Silicon N Channel MOS FET High Speed Power Switching REJ03G1752-0100 Rev.1.00 Nov 13, 2008 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003ZA-A Package name: TO-3PFM D 1. Gate
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RJK6015DPM
REJ03G1752-0100
PRSS0003ZA-A
to3pfm
PRSS0003ZA-A
RJK6015DPM
RJK6015DPM-00-T1
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PRSS0004ZE-A
Abstract: TO3PFM 3p transistor PRSS0003ZA-A PM506
Text: PM506 Package name PVC Polyvinyl chloride Treatment Antistatic Magazine material Maximum storage No. Transistor/Magazine Packing form PRSS0004ZE-A TO-3P, TO-3PV 30 Non dry pack TO-3PFM PRSS0003ZA-A TO-3PFM, TO-3PFMV 30 Non dry pack Unit : mm +2 -2 6.0 6.6
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PM506
PRSS0004ZE-A
PRSS0003ZA-A
PRSS0004ZE-A
TO3PFM
3p transistor
PRSS0003ZA-A
PM506
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60D5DPM 600V - 37A - IGBT Application: Inverter R07DS0174EJ0200 Rev.2.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)
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RJH60D5DPM
R07DS0174EJ0200
PRSS0003ZA-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application: Inverter R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Features • High breakdown-voltage Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
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RJP60V0DPM
R07DS0669EJ0100
PRSS0003ZA-A
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2SK1859
Abstract: PRSS0003ZA-A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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