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    RJH60 Search Results

    RJH60 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJH60D3DPP-M0#T2 Renesas Electronics Corporation IGBT for Inverter Applications, TO-220FL, /Tube Visit Renesas Electronics Corporation
    RJH60F6DPK-00#T0 Renesas Electronics Corporation IGBT for IH, TO-3P, / Visit Renesas Electronics Corporation
    RJH60A85RDPP-M0#T2 Renesas Electronics Corporation IGBT for Inverter Applications Visit Renesas Electronics Corporation
    RJH60D7DPQ-E0#T2 Renesas Electronics Corporation IGBT for Inverter Applications, TO-247, / Visit Renesas Electronics Corporation
    RJH60V2BDPP-M0#T2 Renesas Electronics Corporation IGBT for Inverter Applications Visit Renesas Electronics Corporation
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    RJH60 Price and Stock

    Renesas Electronics Corporation RJH60M1DPE-00-J3

    IGBT TRENCH 600V 16A LDPAK
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    DigiKey RJH60M1DPE-00-J3 Cut Tape 1,987 1
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    Renesas Electronics Corporation RJH60A83RDPE-00-J3

    IGBT TRENCH 600V 20A LDPAK
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    Renesas Electronics Corporation RJH60T04DPQ-A1-T0

    IGBT TRENCH 600V 60A TO247A
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    Renesas Electronics Corporation RJH60D1DPE-00-J3

    IGBT 600V 20A 52W LDPAK
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    Renesas Electronics Corporation RJH60D3DPE-00-J3

    IGBT TRENCH 600V 35A LDPAK
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    RJH60 Datasheets (60)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJH6086BDPK-00#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 198.4W TO-3P Original PDF
    RJH6087BDPK-00#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 223.2W TO-3P Original PDF
    RJH6088BDPK-00#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 60A 268.8W TO-3P Original PDF
    RJH60A01RDPD-A0#J2 Renesas Electronics America Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 5A Original PDF
    RJH60A81RDPD-A0#J2 Renesas Electronics America Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 5A Original PDF
    RJH60A83RDPD-A0#J2 Renesas Electronics America Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 10A Original PDF
    RJH60A83RDPE-00#J3 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 20A 52W LDPAK Original PDF
    RJH60A83RDPN-E0#T2 Renesas Electronics America Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 20A TO-220AB Original PDF
    RJH60A83RDPP-M0#T2 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 20A 30W TO-220FL Original PDF
    RJH60A85RDPE-00#J3 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 30A 113W LDPAK Original PDF
    RJH60A85RDPP-M0#T2 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 30A 39.7W TO-220FL Original PDF
    RJH60D0DPK-00#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 140W TO3P Original PDF
    RJH60D0DPM-00#T1 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 40W TO3PFM Original PDF
    RJH60D0DPQ-E0#T2 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 140W TO-247 Original PDF
    RJH60D1DPE-00#J3 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 20A 52W LDPAK Original PDF
    RJH60D1DPP-E0#T2 Renesas Electronics America Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 10A Original PDF
    RJH60D1DPP-M0#T2 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 20A 20.8W TO220FL Original PDF
    RJH60D2DPE-00#J3 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 25A 63W LDPAK Original PDF
    RJH60D2DPP-M0#T2 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 25A 27.2W TO220FL Original PDF
    RJH60D3DPE-00#J3 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 35A LDPAK Original PDF

    RJH60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RJH60T04

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60T04DPQ-A0 600V - 30A - IGBT High Speed Power Switching R07DS0985EJ0100 Rev.1.00 Dec 05, 2012 Features • Optimized for current resonance application  Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60T04DPQ-A0 R07DS0985EJ0100 PRSS0003ZH-A O-247A) RJH60T04 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH6088BDPK Silicon N Channel IGBT High Speed Power Switching R07DS0390EJ0100 Rev.1.00 May 11, 2011 Features • Ultra high speed switching tf = 60 ns typ. at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load • Low on-state voltage


    Original     		RJH6088BDPK R07DS0390EJ0100 PRSS0004ZE-A PDF

    rjh60d2

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D2DPP-M0 600V - 12A - IGBT Application: Inverter R07DS0160EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D2DPP-M0 R07DS0160EJ0400 PRSS0003AF-A O-220FL) rjh60d2 PDF

    RJH60V2BDPE-00

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60V2BDPE 600V - 12A - IGBT Application: Inverter R07DS0744EJ0100 Rev.1.00 Apr 25, 2012 Features • Short circuit withstand time 6 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60V2BDPE R07DS0744EJ0100 PRSS0004AE-B RJH60V2BDPE-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60V3BDPP-M0 600V - 17A - IGBT Application: Inverter R07DS0761EJ0100 Rev.1.00 May 25, 2012 Features • Short circuit withstand time 6 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60V3BDPP-M0 R07DS0761EJ0100 PRSS0003AF-A O-220FL) PDF

    RJH60T4

    Abstract: RJH60
    Text: Preliminary Datasheet RJH60T4DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0460EJ0100 Rev.1.00 Jun 15, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60T4DPQ-A0 R07DS0460EJ0100 PRSS0003ZH-A O-247A) RJH60T4 RJH60 PDF

    RJH60F3DPK-00

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0200 Rev.2.00 Dec 01, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F3DPK R07DS0199EJ0200 PRSS0004ZE-A current9044 RJH60F3DPK-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D5BDPQ-E0 600V - 37A - IGBT Application: Inverter R07DS0794EJ0200 Rev.2.00 Jul 13, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D5BDPQ-E0 R07DS0794EJ0200 PRSS0003ZE-A O-247) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D5DPQ-E0 600V - 37A - IGBT Application: Inverter R07DS0738EJ0100 Rev.1.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D5DPQ-E0 R07DS0738EJ0100 PRSS0003ZE-A O-247) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D7DPK 600V - 50A - IGBT Application: Inverter R07DS0165EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D7DPK R07DS0165EJ0400 PRSS0004ZE-A PDF

    rjh60f5

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching R07DS0055EJ0300 Rev.3.00 Nov 24, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F5DPK R07DS0055EJ0300 PRSS0004ZE-A curren9044 rjh60f5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60A81RDPD-A0 600V - 5A - IGBT Application: Inverter R07DS1092EJ0100 Rev.1.00 Jul 04, 2013 Features • Reverse conducting IGBT with monolithic diode • Short circuit withstand time 5 s typ. • Low collector to emitter saturation voltage


    Original     		RJH60A81RDPD-A0 R07DS1092EJ0100 PRSS0004ZK-A O-252A) PDF

    rjh60f5

    Abstract: RJH60F5DPK REJ03G1836-0100 RJH60F
    Text: Preliminary RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching REJ03G1836-0100 Rev.1.00 Oct 13, 2009 Features • High speed switching • Low on-state voltage • Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P


    Original     		RJH60F5DPK REJ03G1836-0100 PRSS0004ZE-A rjh60f5 RJH60F5DPK RJH60F PDF

    RJH60D1

    Abstract: RJH60D1DPP-M0 PRSS0003AF-A RJH60
    Text: Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0200 Previous: REJ03G1839-0100 Rev.2.00 Sep 21, 2010 Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D1DPP-M0 R07DS0158EJ0200 REJ03G1839-0100) PRSS0003AF-A O-220FL) revers9044 RJH60D1 RJH60D1DPP-M0 PRSS0003AF-A RJH60 PDF

    RJH60

    Abstract: RJH60D0 PRSS0003ZA-A RJH60D0DPM-00
    Text: Preliminary Datasheet RJH60D0DPM Silicon N Channel IGBT Application: Inverter R07DS0156EJ0100 Rev.1.00 Sep 28, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D0DPM R07DS0156EJ0100 PRSS0003ZA-A em9044 RJH60 RJH60D0 PRSS0003ZA-A RJH60D0DPM-00 PDF

    RJH60F3

    Abstract: PRSS0004ZE-A SC-65 RJH60F RJH60F3DPK-00
    Text: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0100 Rev.1.00 Nov 09, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F3DPK R07DS0199EJ0100 PRSS0004ZE-A RJH60F3 PRSS0004ZE-A SC-65 RJH60F RJH60F3DPK-00 PDF

    RJH60

    Abstract: PRSS0003ZA-A rjh60d
    Text: Preliminary Datasheet RJH60D6DPM Silicon N Channel IGBT Application: Inverter R07DS0175EJ0200 Rev.2.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D6DPM R07DS0175EJ0200 PRSS0003ZA-A em9044 RJH60 PRSS0003ZA-A rjh60d PDF

    RJH60M1DPE

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60M1DPE 600V - 8A - IGBT Application: Inverter R07DS0529EJ0300 Rev.3.00 May 25, 2012 Features • Short circuit withstand time 8 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60M1DPE R07DS0529EJ0300 PRSS0004AE-B RJH60M1DPE PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60A85RDPE 600V - 15A - IGBT Application: Inverter R07DS0809EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode  Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage


    Original     		RJH60A85RDPE R07DS0809EJ0200 PRSS0004AE-B PDF

    RJH60D6DPK

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D6DPK 600V - 40A - IGBT Application: Inverter R07DS0164EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D6DPK R07DS0164EJ0400 PRSS0004ZE-A RJH60D6DPK PDF

    RJH60D1DPE

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D1DPE 600V - 10A - IGBT Application: Inverter R07DS0157EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D1DPE R07DS0157EJ0400 PRSS0004AE-B RJH60D1DPE PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D6DPM 600V - 40A - IGBT Application: Inverter R07DS0175EJ0300 Rev.3.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D6DPM R07DS0175EJ0300 PRSS0003ZA-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH6087BDPK Silicon N Channel IGBT High Speed Power Switching R07DS0389EJ0100 Rev.1.00 May 11, 2011 Features • Ultra high speed switching tf = 55 ns typ. at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load • Low on-state voltage


    Original     		RJH6087BDPK R07DS0389EJ0100 PRSS0004ZE-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D5DPM 600V - 37A - IGBT Application: Inverter R07DS0174EJ0200 Rev.2.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D5DPM R07DS0174EJ0200 PRSS0003ZA-A PDF