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    RJK6018DPM-00#T1 Renesas Electronics Corporation Nch Single Power Mosfet 600V 30A 235Mohm To-3Pfm Visit Renesas Electronics Corporation
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    Renesas Electronics Corporation RJK6018DPM-00-T1

    MOSFET N-CH 600V 30A TO3PFM
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    RJK6018DPM Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK6018DPM-00#T1 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 30A TO3PFM Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6018DPM R07DS0131EJ0200 Rev.2.00 Jun 21, 2012 600V - 30A - MOS FET High Speed Power Switching Features • Low on-resistance RDS on = 0.2  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


    Original     		PDF RJK6018DPM R07DS0131EJ0200 PRSS0003ZA-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6018DPM R07DS0131EJ0200 Rev.2.00 Jun 21, 2012 600V - 30A - MOS FET High Speed Power Switching Features • Low on-resistance RDS on = 0.2  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


    Original     		PDF RJK6018DPM R07DS0131EJ0200 PRSS0003ZA-A

    PRSS0003ZA-A

    Abstract: rjk6018
    Text: Preliminary Datasheet RJK6018DPM Silicon N Channel MOS FET High Speed Power Switching R07DS0131EJ0100 Rev.1.00 Sep 09, 2010 Features • Low on-resistance RDS on = 0.2  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


    Original     		PDF RJK6018DPM R07DS0131EJ0100 PRSS0003ZA-A PRSS0003ZA-A rjk6018