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    RJK6018 Search Results

    RJK6018 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    RJK6018DPK-00#T0 Renesas Electronics Corporation Nch Single Power Mosfet 600V 30A 235Mohm To-3P Visit Renesas Electronics Corporation
    RJK6018DPM-00#T1 Renesas Electronics Corporation Nch Single Power Mosfet 600V 30A 235Mohm To-3Pfm Visit Renesas Electronics Corporation
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    Renesas Electronics Corporation RJK6018DPK-00-T0

    MOSFET N-CH 600V 30A TO3P
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    Renesas Electronics Corporation RJK6018DPM-00-T1

    MOSFET N-CH 600V 30A TO3PFM
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    Renesas Electronics Corporation RJK6018DPK-00#T0

    Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-3P Tube
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    Chip1Stop RJK6018DPK-00#T0 Tube 10
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    RJK6018 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK6018DPK Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    RJK6018DPK-00 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    RJK6018DPK-00#T0 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 30A TO3P Original PDF
    RJK6018DPM-00#T1 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 30A TO3PFM Original PDF

    RJK6018 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RJK6018DPK

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6018DPK R07DS0495EJ0200 Previous: REJ03G1537-0100 Rev.2.00 Jul 22, 2011 600 V - 30 A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.2  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  Low leakage current


    Original     		PDF RJK6018DPK R07DS0495EJ0200 REJ03G1537-0100) PRSS0004ZE-A RJK6018DPK

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6018DPM R07DS0131EJ0200 Rev.2.00 Jun 21, 2012 600V - 30A - MOS FET High Speed Power Switching Features • Low on-resistance RDS on = 0.2  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


    Original     		PDF RJK6018DPM R07DS0131EJ0200 PRSS0003ZA-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6018DPM R07DS0131EJ0200 Rev.2.00 Jun 21, 2012 600V - 30A - MOS FET High Speed Power Switching Features • Low on-resistance RDS on = 0.2  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


    Original     		PDF RJK6018DPM R07DS0131EJ0200 PRSS0003ZA-A

    PRSS0004ZE-A

    Abstract: RJK6018DPK RJK6018DPK-00 SC-65
    Text: RJK6018DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1537-0100 Rev.1.00 Apr 04, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name:TO-3P D 1. Gate


    Original     		PDF RJK6018DPK REJ03G1537-0100 PRSS0004ZE-A PRSS0004ZE-A RJK6018DPK RJK6018DPK-00 SC-65

    PRSS0003ZA-A

    Abstract: rjk6018
    Text: Preliminary Datasheet RJK6018DPM Silicon N Channel MOS FET High Speed Power Switching R07DS0131EJ0100 Rev.1.00 Sep 09, 2010 Features • Low on-resistance RDS on = 0.2  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


    Original     		PDF RJK6018DPM R07DS0131EJ0100 PRSS0003ZA-A PRSS0003ZA-A rjk6018

    PRSS0004ZE-A

    Abstract: RJK6018DPK SC-65 BAY 88 diode
    Text: Preliminary Datasheet RJK6018DPK R07DS0495EJ0200 Previous: REJ03G1537-0100 Rev.2.00 Jul 22, 2011 600 V - 30 A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.2  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  Low leakage current


    Original     		PDF RJK6018DPK R07DS0495EJ0200 REJ03G1537-0100) PRSS0004ZE-A PRSS0004ZE-A RJK6018DPK SC-65 BAY 88 diode

    PRSS0004ZE-A

    Abstract: RJK6018DPK RJK6018DPK-00 SC-65
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    rjh60f5

    Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
    Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.


    Original     		PDF REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK

    R2J24020F

    Abstract: R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114
    Text: 2009.07 ルネサス 電源システム RENESAS Power supply system www.renesas.com 電気に変換されたエネルギーは無駄なく使うことで地球全体 の炭素使用量を減らし地球の温暖化を防ぐことができます。 電気は主に発電所で作られ、高電圧のACで送電されること


    Original     		PDF RJJ01F0008-0201 R2J24020F R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114