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    RJH60F7 Price and Stock

    Renesas Electronics Corporation RJH60F7DPQ-A0-T0

    IGBT TRENCH 600V 90A TO-247A
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    Renesas Electronics Corporation RJH60F7BDPQ-A0-T0

    IGBT TRENCH 600V 90A TO-247A
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    Renesas Electronics Corporation RJH60F7ADPK-00-T0

    IGBT TRENCH 600V 90A TO-3P
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    Renesas Electronics Corporation RJH60F7ADPK-00#T0

    Trans IGBT Chip N-CH 600V 90A 3-Pin(3+Tab) TO-3P Box (Alt: RJH60F7ADPK-00#T0)
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    Renesas Electronics Corporation RJH60F7DPQ-A0#T0

    (Alt: RJH60F7DPQ-A0#T0)
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    RJH60F7 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJH60F7ADPK-00#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 90A 328.9W TO-3P Original PDF
    RJH60F7BDPQ-A0#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 90A 328.9W TO-247A Original PDF
    RJH60F7DPQ-A0#T0 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 90A 328.9W TO247A Original PDF

    RJH60F7 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RJH60F7

    Abstract: RJH60F7DPQ-A0 rjh60f7dp RJH60F7DPQ PRSS0003ZH-A
    Text: Preliminary Datasheet RJH60F7DPQ-A0 0B 600 V - 50 A - IGBT High Speed Power Switching R07DS0328EJ0200 Rev.2.00 Jul 22, 2011 Features 1B • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F7DPQ-A0 R07DS0328EJ0200 PRSS0003ZH-A O-247A) RJH60F7 RJH60F7DPQ-A0 rjh60f7dp RJH60F7DPQ PRSS0003ZH-A PDF

    RJH60F7

    Abstract: RJH60F7ADPK RJH60 RJH60F7A R07DS0237EJ0300 rjh60f7adpk-00-t0 RJH60F7ADPK-00 PRSS0004ZE-A SC-65 REJ03G1837-0200
    Text: Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 Previous: REJ03G1837-0200 Rev.3.00 Jan 05, 2011 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60F7ADPK R07DS0237EJ0300 REJ03G1837-0200) PRSS0004ZE-A C9044 RJH60F7 RJH60F7ADPK RJH60 RJH60F7A R07DS0237EJ0300 rjh60f7adpk-00-t0 RJH60F7ADPK-00 PRSS0004ZE-A SC-65 REJ03G1837-0200 PDF

    RJH60F7

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F7DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0328EJ0100 Rev.1.00 Apr 06, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package


    Original     		RJH60F7DPQ-A0 R07DS0328EJ0100 PRSS0003ZH-A O-247A) RJH60F7 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 Previous: REJ03G1837-0200 Rev.3.00 Jan 05, 2011 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60F7ADPK R07DS0237EJ0300 REJ03G1837-0200) PRSS0004ZE-A PDF

    RJH60F7

    Abstract: RJH60F7A RJH60F7ADPK REJ03G1837-0200 RJH60 RJH60F RJH60F7ADP PRSS0004ZE-A SC-65
    Text: Preliminary Datasheet RJH60F7ADPK Silicon N Channel IGBT High Speed Power Switching REJ03G1837-0200 Rev.2.00 Jun 11, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F7ADPK REJ03G1837-0200 PRSS0004ZE-A Tc9044 RJH60F7 RJH60F7A RJH60F7ADPK REJ03G1837-0200 RJH60 RJH60F RJH60F7ADP PRSS0004ZE-A SC-65 PDF

    rjh60f7

    Abstract: rjh60f7bdpqa0t0 RJH60F7BDPQ-A0
    Text: Preliminary Datasheet RJH60F7BDPQ-A0 600V - 50A - IGBT High Speed Power Switching R07DS0633EJ0100 Rev.1.00 Feb 17, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F7BDPQ-A0 R07DS0633EJ0100 PRSS0003ZH-A O-247A) rjh60f7 rjh60f7bdpqa0t0 RJH60F7BDPQ-A0 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F7DPQ-A0 B 600 V - 50 A - IGBT High Speed Power Switching R07DS0328EJ0200 Rev.2.00 Jul 22, 2011 Features B 1 • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F7DPQ-A0 R07DS0328EJ0200 PRSS0003ZH-A O-247A) PDF

    RJH60F7ADPK

    Abstract: RJH60F7 RJH60F7ADPK-00 RJH60F7ADPK-00-T0 RJH60F7A rjh60f7adpk00t0
    Text: Preliminary RJH60F7ADPK Silicon N Channel IGBT High Speed Power Switching REJ03G1837-0100 Rev.1.00 Oct 13, 2009 Features • High speed switching • Low on-state voltage • Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P


    Original     		RJH60F7ADPK REJ03G1837-0100 PRSS0004ZE-A RJH60F7ADPK RJH60F7 RJH60F7ADPK-00 RJH60F7ADPK-00-T0 RJH60F7A rjh60f7adpk00t0 PDF

    RJH60F7

    Abstract: RJH60F7BD RJH60F7BDPQ RJH60F7BDPQ-A0 rjh60f7bdpqa0t0 RJH60F7B
    Text: Preliminary Datasheet RJH60F7BDPQ-A0 600V - 50A - IGBT High Speed Power Switching R07DS0633EJ0100 Rev.1.00 Feb 17, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJH60F7BDPQ-A0 R07DS0633EJ0100 PRSS0003ZH-A O-247A) RJH60F7 RJH60F7BD RJH60F7BDPQ RJH60F7BDPQ-A0 rjh60f7bdpqa0t0 RJH60F7B PDF

    RJH60F7

    Abstract: control circuit of induction cooker rjh60f5 RJH60F control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608
    Text: IGBT Products Wide Range of IGBT Families Highly efficient power supply circuits can be achieved by combin- Key Features and Target Applications ing Renesas Electronics IGBTs and PFC controllers. Renesas supplies ultra-compact, high-performance IGBTs for built-in flash units


    Original     		RJH608 RJH60F 0212/100/in-house/LAH/JE RJH60F7 control circuit of induction cooker rjh60f5 control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608 PDF

    RJH60F7

    Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
    Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to


    Original     		RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652 PDF

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 PDF

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram PDF

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 PDF

    rjh60f5

    Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
    Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.


    Original     		REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK PDF