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    RJP63K2 Search Results

    RJP63K2 Result Highlights (2)

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    RJP63K2DPP-M0#T2 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT) Visit Renesas Electronics Corporation
    RJP63K2DPK-M0#T0 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT) Visit Renesas Electronics Corporation
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    RJP63K2 Price and Stock

    Rochester Electronics LLC RJP63K2DPP-MZ#T2

    DISCTRETE / POWER TRANSISTOR
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    DigiKey RJP63K2DPP-MZ#T2 Bulk 452 125
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    Rochester Electronics LLC RJP63K2DPK-M2#T0

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    DigiKey RJP63K2DPK-M2#T0 Bulk 39
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    Renesas Electronics Corporation RJP63K2DPK-M2#T0

    - Rail/Tube (Alt: RJP63K2DPK-M2#T0)
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    Rochester Electronics RJP63K2DPK-M2#T0 13,082 1
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    Renesas Electronics Corporation RJP63K2DPP-MZ#T2

    - Rail/Tube (Alt: RJP63K2DPP-MZ#T2)
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    Rochester Electronics RJP63K2DPP-MZ#T2 452 1
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    RJP63K2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RJP63k2

    Abstract: RJP63K rjp63 RJP63K2DPK-M0 rjp63k2dpk
    Text: Preliminary Datasheet RJP63K2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0469EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ


    Original     		PDF RJP63K2DPK-M0 R07DS0469EJ0200 PRSS0004ZH-A RJP63k2 RJP63K rjp63 RJP63K2DPK-M0 rjp63k2dpk

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0468EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ


    Original     		PDF RJP63K2DPP-M0 R07DS0468EJ0200 O-220FL PRSS0003AF-A) O-220FL)

    RJP63k2

    Abstract: RJP63K rjp63 RJP63K2DPK-M0 35A6
    Text: Preliminary Datasheet RJP63K2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0469EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ


    Original     		PDF RJP63K2DPK-M0 R07DS0469EJ0200 PRSS0004ZH-A RJP63k2 RJP63K rjp63 RJP63K2DPK-M0 35A6

    RJP63k2

    Abstract: rjp63k2dpp RJP63K RJP63K2DPP-M0-T2 rjp63 RJP63K2DPP-M0 35A6 PF600 rjp63k2dppm0t2
    Text: Preliminary Datasheet RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0468EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ


    Original     		PDF RJP63K2DPP-M0 O-220FL R07DS0468EJ0200 PRSS0003AF-A) O-220FL) RJP63k2 rjp63k2dpp RJP63K RJP63K2DPP-M0-T2 rjp63 RJP63K2DPP-M0 35A6 PF600 rjp63k2dppm0t2

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram