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    NP75N04YUG Search Results

    NP75N04YUG Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    NP75N04YUG-E2-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP75N04YUG-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive, HSON, /Embossed Tape Visit Renesas Electronics Corporation
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    NP75N04YUG Price and Stock

    Renesas Electronics Corporation NP75N04YUG-E1-AY

    MOSFET N-CH 40V 75A 8HSON
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    DigiKey NP75N04YUG-E1-AY Reel 2,500 2,500
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    NP75N04YUG-E1-AY Cut Tape 1
    • 1 $2.77
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    NP75N04YUG-E1-AY Digi-Reel 1
    • 1 $2.77
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    Avnet Americas NP75N04YUG-E1-AY Reel 4 Weeks 383
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    NP75N04YUG-E1-AY Reel 18 Weeks 2,500
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    Mouser Electronics NP75N04YUG-E1-AY
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    Rochester Electronics NP75N04YUG-E1-AY 2,500 1
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    Renesas Electronics America NP75N04YUG-E1-AY Tape & Reel (TR) 2,500 1
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    Renesas Electronics Corporation NP75N04YUGE1AY

    MOS FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 75A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA NP75N04YUGE1AY 6,115
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    NP75N04YUG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NP75N04YUG-E1-AY Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 75A 8HSON Original PDF

    NP75N04YUG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NP75N04YUG

    Abstract: NP75N04
    Text: Preliminary Data Sheet NP75N04YUG R07DS0018EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP75N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 4.8 mΩ MAX. (VGS = 10 V, ID = 37.5 A)


    Original     		PDF NP75N04YUG R07DS0018EJ0100 NP75N04YUG AEC-Q101 NP75N04

    NP75N04YUG

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP75N04YUG R07DS0018EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP75N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 4.8 mΩ MAX. (VGS = 10 V, ID = 37.5 A)


    Original     		PDF NP75N04YUG R07DS0018EJ0100 NP75N04YUG AEC-Q101

    2sk4145

    Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919
    Text: PowerMOSFET Product Overview February 2010 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current


    Original     		PDF SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919

    2sk4145

    Abstract: 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080
    Text: PowerMOSFET Product Overview www.renesas.eu 2010.04 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: Renesas uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)


    Original     		PDF SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    R2A11301FT

    Abstract: SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas
    Text: Renesas Automotive www.renesas.com 2011.10 Renesas Automotive Introduction "Green" Automotive Initiative Leading the World with a Wide-Ranging Product Lineup • Application Systems ■ Renesas Products Contents 01 ■ Renesas Constituent Technologies HEV/EV


    Original     		PDF /533MHz BGA-832 BGA-472 BGA-429 BGA-720 BGA-653 R2A11301FT SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		PDF 0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1

    UPD70F3524

    Abstract: uPD70F3525 uPD70F3526 uPD70F3529 uPD70F3508 upd70f3523 uPD70F3506 UPD166017 uPD70F35 V850E2 uPD70F3526
    Text: www.renesas.eu 2010.04 Product Scout Automotive fro s t c du o r p ws y! l o n h s o ew ics i n v o r r e t c ov e l s i E h C T E N r e form m Before actually using the product, Renesas urges users to refer to the latest product manual and/or data sheet in advance.


    Original     		PDF X19136EE4V0PF00 78K0/KB2 PD78F0513AD 78K0/KC2 78K0/KD2 78K0/KE2 78K0/KF2 78K0/FY2-L 78K0/FA2-L 78K0/FB2-L UPD70F3524 uPD70F3525 uPD70F3526 uPD70F3529 uPD70F3508 upd70f3523 uPD70F3506 UPD166017 uPD70F35 V850E2 uPD70F3526

    NP75P04

    Abstract: NP75N04 np15p06 HSON8 CD 40472 np28n10sde NP36P04SDG NP23N06 NP23N06YLG NP50P06SDG
    Text: NP-Series • AEC-Q101 and RoHS compliant • Super high current capability • Super low RDS on down to 1.5 m W • Small HSON-8 package • Popular THD and SMD packages • Standard maximum TCH = 175 °C, up to 200 °C for UMOS-2R • SuperJunction1 technology:


    Original     		PDF AEC-Q101 D17430EE5V0PF00 NP75P04 NP75N04 np15p06 HSON8 CD 40472 np28n10sde NP36P04SDG NP23N06 NP23N06YLG NP50P06SDG

    "seat heater"

    Abstract: np28n10sde NP32N055SLE NP100N055PDH NP74N04YUG NP50P06SDG NP100N055MUH NP15P04SLG NP36N055SLE NP36P06SLG
    Text: NP-Series • AEC-Q101 and RoHS compliant • Super high current capability • Super low RDS on down to 1.5 mΩ • Small HSON-8 package • Popular THD and SMD packages • Standard maximum TCH = 175 °C, up to 200 °C for UMOS-2R • SuperJunction1 technology:


    Original     		PDF AEC-Q101 O-220 O-262 O-263ZJ O-251 O-252Z O-263ZK O-220M O-262N O-263ZP "seat heater" np28n10sde NP32N055SLE NP100N055PDH NP74N04YUG NP50P06SDG NP100N055MUH NP15P04SLG NP36N055SLE NP36P06SLG