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    NP75N04YUG

    Abstract: NP75N04
    Text: Preliminary Data Sheet NP75N04YUG R07DS0018EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP75N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 4.8 mΩ MAX. (VGS = 10 V, ID = 37.5 A)


    Original     		PDF NP75N04YUG R07DS0018EJ0100 NP75N04YUG AEC-Q101 NP75N04

    NP75N04YUG

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP75N04YUG R07DS0018EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP75N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 4.8 mΩ MAX. (VGS = 10 V, ID = 37.5 A)


    Original     		PDF NP75N04YUG R07DS0018EJ0100 NP75N04YUG AEC-Q101