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    Renesas Electronics Corporation RJH60D7BDPQ-E0-T2

    IGBT TRENCH 600V 90A TO-247
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    DigiKey RJH60D7BDPQ-E0-T2 Tube
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    Renesas Electronics Corporation RJH60D7BDPQ-E0#T2

    Trans IGBT Chip N-CH 600V 90A 300000mW 3-Pin(3+Tab) TO-247 Tube
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    Verical RJH60D7BDPQ-E0#T2 50 11
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    RJH60D7BDPQ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJH60D7BDPQ-E0#T2 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 90A 300W TO-247 Original PDF

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    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D7BDPQ-E0 600V - 50A - IGBT Application: Inverter R07DS0795EJ0200 Rev.2.00 Jul 13, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D7BDPQ-E0 R07DS0795EJ0200 PRSS0003ZE-A O-247) PDF

    RJH60D7BDPQ-E0

    Abstract: rjh60d7bdpq
    Text: Preliminary Datasheet RJH60D7BDPQ-E0 600V - 50A - IGBT Application: Inverter R07DS0795EJ0200 Rev.2.00 Jul 13, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)


    Original     		RJH60D7BDPQ-E0 R07DS0795EJ0200 PRSS0003ZE-A O-247) RJH60D7BDPQ-E0 rjh60d7bdpq PDF

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 PDF