Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RJH60F7ADPK00T0 Search Results

    RJH60F7ADPK00T0 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJH60F7ADPK-00#T0 Renesas Electronics Corporation IGBT for IH, TO-3P, / Visit Renesas Electronics Corporation
    SF Impression Pixel

    RJH60F7ADPK00T0 Price and Stock

    Renesas Electronics Corporation RJH60F7ADPK-00-T0

    IGBT TRENCH 600V 90A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJH60F7ADPK-00-T0 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Renesas Electronics Corporation RJH60F7ADPK-00#T0

    Trans IGBT Chip N-CH 600V 90A 3-Pin(3+Tab) TO-3P Box (Alt: RJH60F7ADPK-00#T0)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Asia RJH60F7ADPK-00#T0 18 Weeks 30
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    RJH60F7ADPK00T0 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RJH60F7

    Abstract: RJH60F7ADPK RJH60 RJH60F7A R07DS0237EJ0300 rjh60f7adpk-00-t0 RJH60F7ADPK-00 PRSS0004ZE-A SC-65 REJ03G1837-0200
    Text: Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 Previous: REJ03G1837-0200 Rev.3.00 Jan 05, 2011 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60F7ADPK R07DS0237EJ0300 REJ03G1837-0200) PRSS0004ZE-A C9044 RJH60F7 RJH60F7ADPK RJH60 RJH60F7A R07DS0237EJ0300 rjh60f7adpk-00-t0 RJH60F7ADPK-00 PRSS0004ZE-A SC-65 REJ03G1837-0200

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 Previous: REJ03G1837-0200 Rev.3.00 Jan 05, 2011 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60F7ADPK R07DS0237EJ0300 REJ03G1837-0200) PRSS0004ZE-A

    RJH60F7

    Abstract: RJH60F7A RJH60F7ADPK REJ03G1837-0200 RJH60 RJH60F RJH60F7ADP PRSS0004ZE-A SC-65
    Text: Preliminary Datasheet RJH60F7ADPK Silicon N Channel IGBT High Speed Power Switching REJ03G1837-0200 Rev.2.00 Jun 11, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		PDF RJH60F7ADPK REJ03G1837-0200 PRSS0004ZE-A Tc9044 RJH60F7 RJH60F7A RJH60F7ADPK REJ03G1837-0200 RJH60 RJH60F RJH60F7ADP PRSS0004ZE-A SC-65

    RJH60F7ADPK

    Abstract: RJH60F7 RJH60F7ADPK-00 RJH60F7ADPK-00-T0 RJH60F7A rjh60f7adpk00t0
    Text: Preliminary RJH60F7ADPK Silicon N Channel IGBT High Speed Power Switching REJ03G1837-0100 Rev.1.00 Oct 13, 2009 Features • High speed switching • Low on-state voltage • Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P


    Original     		PDF RJH60F7ADPK REJ03G1837-0100 PRSS0004ZE-A RJH60F7ADPK RJH60F7 RJH60F7ADPK-00 RJH60F7ADPK-00-T0 RJH60F7A rjh60f7adpk00t0