Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK6018DPM R07DS0131EJ0200 Rev.2.00 Jun 21, 2012 600V - 30A - MOS FET High Speed Power Switching Features • Low on-resistance RDS on = 0.2 typ. (at ID = 15 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching
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Original
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PDF
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RJK6018DPM
R07DS0131EJ0200
PRSS0003ZA-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK6018DPM R07DS0131EJ0200 Rev.2.00 Jun 21, 2012 600V - 30A - MOS FET High Speed Power Switching Features • Low on-resistance RDS on = 0.2 typ. (at ID = 15 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching
|
Original
|
PDF
|
RJK6018DPM
R07DS0131EJ0200
PRSS0003ZA-A
|