Untitled
Abstract: No abstract text available
Text: E G & 6/ CANADA/O PTOE LEK n n lOE D • 3Q30bl0 D0DQQ31 R ■ CANA i l Solid state 7"" V/"i>7 Solid State Emitters Elec,ro ° P “CS Developmental Type C86046E 820 nm CW-Operated GaAIAs Injection Laser With Integral Optical Feedback Photodiode ■ Typical Threshold Current - 100 mA
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3Q30bl0
D0DQQ31
C86046E
L-1093
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diode.18
Abstract: VTE-C18AL Vactec
Text: ShE D • 3Q30bQ^ D0Ü1E15 3 bS GaAIAs Infrared Emitting Diodes VTE-C18AL 18 mil Chip — 880 nm r E G 8« G HVCT -m -iS VACTEC DESCRIPTION PAC K AG E DIMENSIONS inch mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase epitaxial process which produces high
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VTE-C18AL
diode.18
VTE-C18AL
Vactec
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PDF
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HFD-1100
Abstract: HFD PIN photodiode 850 nm HFD-1060 fast photodiode amplifier low noise ir photodiode amplifier ultrafast photodiode HFD1100
Text: E G & G/CANADA/OPTOELEK 47E D • 3Q30bl0 □□□033b T ■ C ANA HFD Series 1060; 1100 _ t -^-¿7 Features • • . 600 V/10"6 S Slew Rate Amplifier Groundable Case • • Temperature and Voltage Stable Low Voltage Operation • Shielded Amplifier
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OCR Scan
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3Q30bl0
y/-67
HFD-1100
HFD PIN photodiode 850 nm
HFD-1060
fast photodiode amplifier
low noise ir photodiode amplifier
ultrafast photodiode
HFD1100
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PDF
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tic 1060
Abstract: No abstract text available
Text: E G & G/C ANADA/OPTOELEK ID 303Qb]>a DOOGIGI 7^3 « C A N A Photodiode i t e i C30807, C30808, C30809 Optics E ,e c t n o l C30810, C30822, C30831 DATA SHEET V l ’ S " 3 N-Type Silicon p-i-n Photodetectors L-571 C30810 1-568 C30807 C30831 C30808 C30809,
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303Qb]
C30807,
C30808,
C30809
C30810,
C30822,
C30831
C30808
C30809,
C30822
tic 1060
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PDF
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FFD-100
Abstract: FFD-040B FFD-040A FFD-040 FFD-200 photo-diode bias ultrafast photodiode FFD040A
Text: E G & G/ CANADA/ OPTOELEK i*7E ]> I 3D3DblD 000033M 5 ICANA F Series FFD-040;FFD-100;FFD-200 T -m -53 Features • • • • Large Active Area W ide Spectral Range Low NEP Low Operating Voltage High Responsivity Ultra-Fast Rise and Fall Tim e Isolated Photodiode Chip
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OCR Scan
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000033M
FFD-040
FFD-100
FFD-200)
T-m-53
FFD-040B
FFD-100
FFD-200
O-462
125righted
FFD-040B
FFD-040A
FFD-200
photo-diode bias
ultrafast photodiode
FFD040A
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PDF
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Untitled
Abstract: No abstract text available
Text: E G 8t G / C A N A D A / O P T O E L E K It C il 1ÜE D • 3G3GblO □□□□□S3 T *CANA Infrared Emitters Electro Optics Eiectrooptics and Devices S86017E, S86018E S86020E, S86021E S86017E S86018E o High-Speed Gallium Aluminum Arsenide IR-Emitters for Continuous
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S86017E,
S86018E
S86020E,
S86021E
S86017E
S86020E
S86020E
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PDF
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Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/ OP TOELEK 3G 3G blO IO RC/IB ectro Optics OOOOO'ì? 4 3 2 HCANA Planar InGaAs ÁPD C30644, C30645 DATA SHEET • Spectral response range 1100 to 1700 nm ■ High responsivity ■ Low capacitance ■ Fast response time ■ Low dark current and noise
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C30644,
C30645
C30644
C30645
ED-0025/08/88
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PDF
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SIECOR Fiber Optic cable
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK ^ M7E D • 3ü3DblG OGDOE^ EGzG OPTOELECTRONICS h ■ CANA C86075E& C86082E Series - n v / ' O i C86082E Series C86075E Series The EG&G series of 1300 nm LEDs are edge emitting InGaAsP
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OCR Scan
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C86075E&
C86082E
C86075E
ED-0050/12/90
SIECOR Fiber Optic cable
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PDF
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Untitled
Abstract: No abstract text available
Text: G & G/CANADA/OPTOELEK itesi ID D BDBGblD ODGGOMb Electro Optics and Devices T70 « C A N A /-Y/’b Solid State Detectors Developmental Types C30952 Series Photodiodes Very Wide Bandpass Silicon Photodiode - Preamplifier Modules Available With Integral Light Pipes For Fiber Optic Applications
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C30952
5x103
0x103
C30952E,
C30952F,
C30952G
12-lead
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PDF
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VT30N1
Abstract: VT33N2 VT30N2 VT30N3 VT300 VT30N4 VT33N1 VT33N3
Text: VT300 Se rie s PHOTOCONDUCTIVE CELL PA CK A G E DIM ENSIONS inch mm A B SO LU TE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNITS CONTINUOUS POWER DISSIPATION DERATE ABOVE 25° C Pd A P d /A T 125 2.5 mW mW/°C Ta - 40 to +75 °C TEMPERATURE RANGE OPERATING AND STORAGE
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VT300
RIO/R100)
VT30N1
VT30N2
VT30N3
VT30N4
VT33N1
VT33N2
VT33N3
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PDF
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Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELÊK BOBOblD ODDOESb Q • CANA 850 nm Quantum Well 7^ : Pulsed Laser Series DATA SHEET C86083E - High power pulsed laser in a coaxial package T O peration at 50ns pulse duration and 3 kH z repetition rate H igh P eak O utput Pow er: 10W @ 17 A
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C86083E
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PDF
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Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK ID î • 3ü30blü G O O O i n ItC ilElectro 123 M C A N A T-W S i Photodiode C30895 DATA SHEET Optics Silicon Avalanche Photodiode Optimized for High Responsivity and Very Low Noise at 1060 Nanometers ■ Noise Equivalent Power NEP at 1060 nm — 7.5 x 1 0 14 W/Hz1/2 max.
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C30895
C30895
ED-0028/10/88
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PDF
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45016m
Abstract: J12-18C-R250U J12D-M204-R01M J12-18C-R01M J12D-M204-R02M metal detectors circuit HgCdTe PbSe Judson judson PA-100 J12-18C
Text: E G S G JUI1S0N 31E D m 3030b05 D0D0225 □ • JlID T -V /-V / Indium Arsenide Detector Operating Notes General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.6 urn wavelength range.
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303Db0S
J12TE2-8B6-R01M
J12TE2-8B6-R02M
J12TE3
J12TE3-66S
J12D-M204-R01M
J12D-M204-R02M
45016m
J12-18C-R250U
J12-18C-R01M
metal detectors circuit
HgCdTe
PbSe Judson
judson PA-100
J12-18C
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PDF
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Vactec
Abstract: Photodiode-Array VTB9610
Text: SbE n 3 0 3 0 L i Q c3 0 0 D 1 1 1 3 D bOl ' <4 I ' O O _VTB9610DS Rev. B PHOTODIODE ARRAY 24 ELEMENT E G zG v a c t e c VTB9610 OPTOELECTRONICS E G & G VCT VACTEC PRODUCT DESCRIPTION FEATURES This is a 24 element photodiode array specifically designed for use in the
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OCR Scan
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3G30bCH
00D1113
VTB9610DS
VTB9610
285OK
Vactec
Photodiode-Array
VTB9610
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PDF
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Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK I t C i l • IO Optics 303DtilD DDOOlQ'ì TÔH « C A N A “p - Y / - * ' 3 Photodiode C30843 C30844, C30845, C30846 DATA S H EET Quadrant N-Type Silicon p-i-n Photodetectors ■ Broad Range of Photosensitive Suface Areas — 5 mm2 to 100 mm2
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OCR Scan
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303DtilD
C30843
C30844,
C30845,
C30846
coverin68
C30845
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PDF
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Corning 7052
Abstract: DT-110
Text: E G & G JUDSON 27E D • 3D30b0S GQQOns b ■ DT Series Features • • • • Planar Diffused Oxide Passivated Guard Ring Construction Wide Spectral Range • • • • Low Noise Large Area Fast Rise Time Wide Dynamic Range Operating Data and Specifications at 23°C: Typical Performance at 100 V Bias
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OCR Scan
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3D30b0S
DT-25
DT-110
3Q30b0S
DT-25
DT-110
Corning 7052
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PDF
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