Untitled
Abstract: No abstract text available
Text: E G & 6/ CANADA/O PTOE LEK n n lOE D • 3Q30bl0 D0DQQ31 R ■ CANA i l Solid state 7"" V/"i>7 Solid State Emitters Elec,ro ° P “CS Developmental Type C86046E 820 nm CW-Operated GaAIAs Injection Laser With Integral Optical Feedback Photodiode ■ Typical Threshold Current - 100 mA
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3Q30bl0
D0DQQ31
C86046E
L-1093
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HFD-1100
Abstract: HFD PIN photodiode 850 nm HFD-1060 fast photodiode amplifier low noise ir photodiode amplifier ultrafast photodiode HFD1100
Text: E G & G/CANADA/OPTOELEK 47E D • 3Q30bl0 □□□033b T ■ C ANA HFD Series 1060; 1100 _ t -^-¿7 Features • • . 600 V/10"6 S Slew Rate Amplifier Groundable Case • • Temperature and Voltage Stable Low Voltage Operation • Shielded Amplifier
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3Q30bl0
y/-67
HFD-1100
HFD PIN photodiode 850 nm
HFD-1060
fast photodiode amplifier
low noise ir photodiode amplifier
ultrafast photodiode
HFD1100
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tic 1060
Abstract: No abstract text available
Text: E G & G/C ANADA/OPTOELEK ID 303Qb]>a DOOGIGI 7^3 « C A N A Photodiode i t e i C30807, C30808, C30809 Optics E ,e c t n o l C30810, C30822, C30831 DATA SHEET V l ’ S " 3 N-Type Silicon p-i-n Photodetectors L-571 C30810 1-568 C30807 C30831 C30808 C30809,
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303Qb]
C30807,
C30808,
C30809
C30810,
C30822,
C30831
C30808
C30809,
C30822
tic 1060
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Untitled
Abstract: No abstract text available
Text: E G 8t G / C A N A D A / O P T O E L E K It C il 1ÜE D • 3G3GblO □□□□□S3 T *CANA Infrared Emitters Electro Optics Eiectrooptics and Devices S86017E, S86018E S86020E, S86021E S86017E S86018E o High-Speed Gallium Aluminum Arsenide IR-Emitters for Continuous
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S86017E,
S86018E
S86020E,
S86021E
S86017E
S86020E
S86020E
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Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/ OP TOELEK 3G 3G blO IO RC/IB ectro Optics OOOOO'ì? 4 3 2 HCANA Planar InGaAs ÁPD C30644, C30645 DATA SHEET • Spectral response range 1100 to 1700 nm ■ High responsivity ■ Low capacitance ■ Fast response time ■ Low dark current and noise
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C30644,
C30645
C30644
C30645
ED-0025/08/88
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Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELÊK BOBOblD ODDOESb Q • CANA 850 nm Quantum Well 7^ : Pulsed Laser Series DATA SHEET C86083E - High power pulsed laser in a coaxial package T O peration at 50ns pulse duration and 3 kH z repetition rate H igh P eak O utput Pow er: 10W @ 17 A
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C86083E
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Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK I t C i l • IO Optics 303DtilD DDOOlQ'ì TÔH « C A N A “p - Y / - * ' 3 Photodiode C30843 C30844, C30845, C30846 DATA S H EET Quadrant N-Type Silicon p-i-n Photodetectors ■ Broad Range of Photosensitive Suface Areas — 5 mm2 to 100 mm2
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303DtilD
C30843
C30844,
C30845,
C30846
coverin68
C30845
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