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    3ROA Price and Stock

    Everlight Electronics Co Ltd EAST1613ROA0

    LED ORANGE/RED CLEAR SMD
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    DigiKey EAST1613ROA0 Reel 6,000
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    Mouser Electronics EAST1613ROA0
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    OMRON Industrial Automation G3R-OA202SLN-DC5-24

    AC OUTPUT MODULE 2A
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    DigiKey G3R-OA202SLN-DC5-24 Bulk 1
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    OMRON Industrial Automation G3R-OA202SZN-DC5-24

    AC OUTPUT MODULE 2A
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    DigiKey G3R-OA202SZN-DC5-24 Bulk 1
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    OMRON Industrial Automation G3R-OA202SZN-UTU-DC5-24

    AC OUTPUT MODULE 2A
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    DigiKey G3R-OA202SZN-UTU-DC5-24 Bulk 1
    • 1 $53.85
    • 10 $47.037
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    OMRON Industrial Automation G3R-OA202SLN-UTU-DC5-24

    RELAY
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    3ROA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    JIS F05 connectors

    Abstract: TOTX1701 JEITA RC-5720B torx1701 todx2701 TODX270B TOTX196B TODX271 TOTX193A TODX271A
    Text: 2008-3 PRODUCT GUIDE Fiber-Optic Devices TOSLINKTM s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g TOSLINK Optical Transmission Devices TOSLINK™ is a family of data transmission devices that use optical signals instead of electrical signals. Because TOSLINK uses an optical fiber cable as


    Original     		BCE0037C S-167 BCE0037D JIS F05 connectors TOTX1701 JEITA RC-5720B torx1701 todx2701 TODX270B TOTX196B TODX271 TOTX193A TODX271A PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    transistor SMD t04

    Abstract: transistor SMD t05 transistor SMD t04 51 smd T04 transistor kA2 smd smd t05 transistor t05 smd transistor D1060 smd t04 68 smd code t04
    Text: 2009-2 PRODUCT GUIDE LED Lamps SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng High-Brightness LED Lamps Overview of Toshiba’s Visible LED Lamp Family 1 New Product Digest 1. 2. 3. 4. High-Luminous-Flux SMD LED Lamps: TL12 Series . 4


    Original     		TLWK1100C F1050 F1052 H1100B BCE0006D BCE0006E transistor SMD t04 transistor SMD t05 transistor SMD t04 51 smd T04 transistor kA2 smd smd t05 transistor t05 smd transistor D1060 smd t04 68 smd code t04 PDF

    TC7MP3125

    Abstract: TC7MPB9306 WPB306 TC74LCX164245 TC74VCX163245 TC7MP3245 TC7MPN3245 TC74LCXR163245 TC74LCXR164245 TC7MPB9306FK
    Text: 2008-9 PRODUCT GUIDE Level Shifters s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g As electronic systems like information and communication systems become increasingly C O N T E N T S 1 Overview 2 Dual-Supply Bidirectional Bus Transceivers


    Original     		BCE0035D E-28831 BCE0035E TC7MP3125 TC7MPB9306 WPB306 TC74LCX164245 TC74VCX163245 TC7MP3245 TC7MPN3245 TC74LCXR163245 TC74LCXR164245 TC7MPB9306FK PDF

    toshiba emmc 4.4

    Abstract: toshiba 8GB Nand flash emmc toshiba emmc toshiba 16GB Nand flash emmc TCM9000MD TCM9200MD TOSHIBA eMMC CATALOG TC35893XBG RGB to MIPI DSI LCD toshiba 8GB Nand flash bga
    Text: 2008-9 SYSTEM CATALOG Mobile Solutions s e m i c o n d u c t o r h t t p : / / w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Semiconductor Devices for Mobile Applications Mobile communications via cellular phones and PDAs are changing the way we live.


    Original     		SCE0008G E-28831 SCE0008H toshiba emmc 4.4 toshiba 8GB Nand flash emmc toshiba emmc toshiba 16GB Nand flash emmc TCM9000MD TCM9200MD TOSHIBA eMMC CATALOG TC35893XBG RGB to MIPI DSI LCD toshiba 8GB Nand flash bga PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


    Original     		SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853 PDF

    GT30J124

    Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
    Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.


    Original     		BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123 PDF

    TB9061FNG

    Abstract: TB6612 toshiba tb6560 TB9056FNG TB6584FNG TB9067FNG sop18 footprint TB6560AHQ TB9061 tb6560ahq application
    Text: 2009-3 SYSTEM CATALOG Motor Solutions Guide SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Toshiba’s Semiconductors for Motor Control Interface Driver Controller Many of the digital mobile handsets, small office equipment and toy robots are battery-powered,


    Original     		SCE0020B SCE0020C TB9061FNG TB6612 toshiba tb6560 TB9056FNG TB6584FNG TB9067FNG sop18 footprint TB6560AHQ TB9061 tb6560ahq application PDF

    NEC 10F triac

    Abstract: TLP250 MOSFET DRIVER p421f p421 coupler P181 Photocoupler tlp3065 TLP3083 TLP520 TLP250 MOSFET DRIVER application note 5252 F 4-pin
    Text: 2008-3 PRODUCT GUIDE Photocouplers and Photorelays s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Product Index Part Number Package Output Page TLP102 TLP106 TLP112 TLP112A TLP113 TLP114A TLP114A IGM TLP115 TLP115A TLP116 TLP117


    Original     		TLP102 TLP106 TLP112 TLP112A TLP113 TLP114A TLP115 TLP115A TLP116 NEC 10F triac TLP250 MOSFET DRIVER p421f p421 coupler P181 Photocoupler tlp3065 TLP3083 TLP520 TLP250 MOSFET DRIVER application note 5252 F 4-pin PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 PDF

    MDS1754

    Abstract: mosfet low vgs
    Text: N-Channel Trench MOSFET, 40V, 7.6A, 29mΩ General Description Features The MDS1754 uses advanced Magnachip’s Trench MOSFET Technology to provided high performance in on-state resistance, switching performance and reliability. VDS = 40V ID=7.6A VGS=10V


    Original     		MDS1754 MDS1754 mosfet low vgs PDF

    MDS1652

    Abstract: No abstract text available
    Text: Single N-Channel Trench MOSFET 30V, 13A, 6.5mΩ Features General Description VDS = 30V ID = 13A @VGS = 10V RDS ON < 6.5mΩ @VGS = 10V < 8.5mΩ @VGS = 4.5V The MDS1652 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching


    Original     		MDS1652 MDS1652 PDF

    0342F

    Abstract: 82269 MagnaChip Semiconductor
    Text: N-Channel Trench MOSFET 30V, 7.2A, 28mΩ General Description Features The MDS1656 uses advanced Magnachip’s trench MOSFET VDS = 30V ID = 7.2A @VGS = 10V RDS ON < 28mΩ @VGS = 10V < 42mΩ @VGS = 4.5V Technology to provide high performance in on-state


    Original     		MDS1656 MDS1656­ 0342F 82269 MagnaChip Semiconductor PDF

    MDD1754

    Abstract: MDD1754RH MagnaChip Semiconductor Ltd. MDD1754 4000P mosfet low vgs
    Text: N-Channel Trench MOSFET, 40V, 20.5A, 27mΩ General Description Features The MDD1754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. VDS = 40V ID=20.5A VGS=10V


    Original     		MDD1754 MDD1754 MDD1754RH MagnaChip Semiconductor Ltd. MDD1754 4000P mosfet low vgs PDF

    MSI2021

    Abstract: No abstract text available
    Text: Preliminary – Subject to change without notice 0.4Ω Dual SPDT Analog Switch with Negative Swing Feature General Description Features The MSI2021 is a dual single-pole double-throw dual SPDT analog device aimed for analog signals switching applications in various portable electrical


    Original     		MSI2021 50MHz MSI2021 PDF

    MDE9754RH

    Abstract: 0342F mde9754 8000P
    Text: Dual Enhancement N-P Channel Trench MOSFET General Description Features The MDE9754 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in on-state resistance, switching performance and reliability. Low RDS ON , low gate charge can be offering superior


    Original     		MDE9754 MDE9754­ MDE9754RH 0342F 8000P PDF

    MDF1752

    Abstract: 220F
    Text: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDF1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state


    Original     		MDF1752 MDF1752­ 220F PDF

    mdd3752

    Abstract: MDD3752RH P-channel Trench MOSFET MDD*3752 MDD375 MagnaChip Semiconductor mosfet 441 Pchannel mosfet p-channel 10A 3ROA
    Text: P-Channel Trench MOSFET, -40V, -43A, 17mΩ Features General Description VDS = -40V ID = -43A @VGS = -10V RDS ON < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V The MDD3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability.


    Original     		MDD3752 MDD3752 MDD3752RH P-channel Trench MOSFET MDD*3752 MDD375 MagnaChip Semiconductor mosfet 441 Pchannel mosfet p-channel 10A 3ROA PDF

    MDS1651

    Abstract: No abstract text available
    Text: Single N-Channel Trench MOSFET 30V, 11.6A, 17mΩ General Description Features The MDS1651 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. VDS = 30V ID = 11.6A@VGS = 10V


    Original     		MDS1651 MDS1651 PDF

    MDS3651

    Abstract: MDS365 mds3651r p-channel 60V 100A MOSFET
    Text: Preliminary – Subject to change without notice Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ General Description Features The MDS3651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability


    Original     		MDS3651 MDS3651­ MDS365 mds3651r p-channel 60V 100A MOSFET PDF

    MDF12N50

    Abstract: 500V MOSFET Power Supply 10T1 mdf12n n-Channel mosfet 400v uc pfc MagnaChip Semiconductor high power diode 500v
    Text: Preliminary – Subject to change without notice N-Channel MOSFET 500V, 11.5 A, 0.65Ω General Description Features The MDF12N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.


    Original     		MDF12N50 500V MOSFET Power Supply 10T1 mdf12n n-Channel mosfet 400v uc pfc MagnaChip Semiconductor high power diode 500v PDF

    MDC0531E

    Abstract: MDC05
    Text: Dual N-Channel Trench MOSFET 30V, 8.0 A, 20mΩ General Description Features The MDC0531E uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability. Low Rds on and low gate charge operation with gate voltage as


    Original     		MDC0531E MDC0531E MDC05 PDF

    MDS1754

    Abstract: trench mosfet mosfet low vgs
    Text: N-Channel Trench MOSFET, 40V, 7.6A, 29mΩ Features General Description VDS = 40V ID = 7.6 VGS = 10V RDS(ON) < 29mΩ @VGS = 10V < 37mΩ @ VGS = 4.5V The MDS1754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in on-state resistance, switching performance and reliability.


    Original     		MDS1754 MDS1754 trench mosfet mosfet low vgs PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 PDF