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    7202A

    Abstract: No abstract text available
    Text: M OSEL V ITEU C MS7200U7201AL/7202AL 256x9,512x9, 1Kx9 CMOS FIFO Features Descriptions • First-In/First-Out static RAM based dual port memory ■ Three densities in a x9 configuration ■ Low power versions ■ Includes empty, full, and half full status flags


    OCR Scan     		PDF MS7200U7201AL/7202AL 256x9 512x9, MS7200L/7201AL/7202AL MS7200-25NC MS7200-25JC MS7200-25FC MS7200-35NQ MS7200-35JC MS7200-35FC 7202A

    Untitled

    Abstract: No abstract text available
    Text: MOSEL VITELIC V53C16258H 256KX 16 PAGE MODE CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT HIGH PERFORMANCE PRELIMINARY 40 45 50 60 Max. R A S Access Time, tf^c 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA) 20 ns 22 ns 24 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)


    OCR Scan     		PDF V53C16258H 256KX 110ns V53C16258H 0003L24 40-Pin DD03bPS

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V IT E L IC V53C8257H U LTR A -HIG H SPEED, 256KX 8B IT P A G E M O D E WITH E X TE N D E D DATA O U T P U T ED O A N D C A S B U R S T M O D E CM O S D YN A M IC R A M PR E LIM IN A R Y 45/45L 50/50L 55/55L 60/60L Max. RAS Access Time, Orac)


    OCR Scan     		PDF V53C8257H 256KX 45/45L 50/50L 55/55L 60/60L V53C8257H VS3C8257H

    Untitled

    Abstract: No abstract text available
    Text: M O SE L VITELIC PRELIMINARY V62C518256 32Kx8 BIT STATIC RAM Features Description • High-speed: 35,45, 55, 70 ns ■ Ultra low DC operating current of 5mA Max. ■ Low Power dissipation: TTL Standby: 3mA (Max.) CMOS Standby: 20n.A (Max.) ■ Fully static operation


    OCR Scan     		PDF V62C518256 32Kx8 28-pin V62C518256 144-bit b3533Tl

    Untitled

    Abstract: No abstract text available
    Text: M O SEL V tTE LiC V53C8512N 3.3 VOLT, LO W POWER 512K x 8 AN D 5 1 2 K x 9 B IT FA S T PAGE MODE CMOS DYNAMIC RAM PRELIM INARY HIGH PERFORMANCE V53C8512N 60/60L 70/70L M ax. R A S A cce ss T im e, Orac 6 0 ns 70 ns M ax. C o lum n A d dre ss A cce ss T im e , tCAA)


    OCR Scan     		PDF V53C8512N 60/60L 70/70L V53C8S12NL V53C8512N January199S b3S33

    kexz

    Abstract: No abstract text available
    Text: MOSEL-VITELIC b2E » MOSEL-VITELIC • b3533Tl GGGS33L. GES ■ M O V I V104J232, V104J236 512K X 32, 512K x 36 SIMM PRELIMINARY Features Description a 524,288 x 32 bit or 524,288 x 36 bit The V104J232 Memory Module is organized as 524,288 x 32 bits in a 72-lead single-in-line module.


    OCR Scan     		PDF b3533Tl GGGS33L. V104J232, V104J236 72-lead V104J232 QDQE34A 104J232/236 kexz

    mrah

    Abstract: No abstract text available
    Text: M O SE L VÊTEUC V53C104N H IG H PERFO RM ANCE, 3.3 VO LT 2 5 6 K X 4 B IT F A S T P A G E M O D E C MOS D YN A M IC R A M HIGH PERFORMANCE V53C104N 60/60L 70/70L 80/80L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA)


    OCR Scan     		PDF V53C104N V53C104N 60/60L 70/70L 80/80L V53C104NL V53C104N-80 mrah

    V53C104D

    Abstract: No abstract text available
    Text: M O S E L V IT E U C V53C104D HIGH PERFORMANCE, LO W POWER 256K X 4 B IT FAS T PAG E MODE CMOS DYNAMIC RAM PRELIMINARY 60 HIGH PERFORMANCE V53C104D 70 80 Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, 0CAA) 30 ns 35 ns 40 ns


    OCR Scan     		PDF V53C104D V53C104D V53C104D-80 V53C104D-1 V53C104t b3S33Tl D2731

    6264l

    Abstract: No abstract text available
    Text: M O SE L VTTEUC M S6264L 8 K x 8 CMOS STATIC RAM Features Description • Available in 70/100 ns Max. ■ Automatic power-down when chip disabled ■ Lower power consumption: MS6264L — 467.5mW (Max.) Operating — 16.5mW (Max.) Standby — 500|iW (Max.) Standby


    OCR Scan     		PDF S6264L MS6264L MS6264L S6264L-70PC S6264L-70FC S6264L-10PC S6264L-10FC 6264L 3S3311 00Q3MEÃ 6264l

    Untitled

    Abstract: No abstract text available
    Text: M O S E L VITELÊC MS7203U7204L 2K X 9, 4K X 9 CMOS FIFO Features Description • First-In/First-Out static RAM based dual port memory ■ Two densities 2K and 4K in a x9 configuration ■ Low power versions ■ Includes empty, full, and half full status flags


    OCR Scan     		PDF MS7203U7204L MS7203L/7204L MS7203-50PC MS7204-50PC MS7203-50NC MS7204-50NC MS7203-50JC MS7204-50JC MS7203-50FC MS7204-50FC

    V53C16258H

    Abstract: 3bld
    Text: MOSEL VITELIC V53C16258H 256KX 16 PAGE MODE CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT HIGH PERFORMANCE PRELIMINARY 40 45 50 60 Max. R A S Access Time, tf^c 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA) 20 ns 22 ns 24 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)


    OCR Scan     		PDF V53C16258H 256KX 16-bit 40-pin 0003L24 V53C16258H 3bld

    Untitled

    Abstract: No abstract text available
    Text: MOSEL VITELIC V53C511740500 4M X 4 EDO PA GE MODE CMOS DYNAMIC RAM V53C511740500 50 60 70 Max. RAS Access Time, Irac 50 ns 60 ns 70 ns Max. Column Address Access Time, ( ^ aa ) 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, (fo ) 20 ns 25 ns


    OCR Scan     		PDF V53C511740500 V53C511740500 cycles/32 24/26-pin DDl42c 0004ET2

    Untitled

    Abstract: No abstract text available
    Text: 4öE nOSEL-VITELIC D ^3533^1 MOSEL OOOOfil? novi 4 MS62256B ADVANCE INFORMATION 32K x 8 CMOS Static RAM T -4 6 -2 3 -1 4 FEATURES DESCRIPTION • High-speed - 70/100/120/150 ns The MOSEL MS62256B is a 262,144-bit static random access memory organized as 32,768 words by 8 bits and


    OCR Scan     		PDF MS62256B 440mW MS62256B) MS62256BL/BLL) MS62256B 144-bit 3S33Tl MS62256B-70PC MS62256B-70FC

    Untitled

    Abstract: No abstract text available
    Text: M OSEL VITELIC V53C1 OOF FAMILY HIGH PERFORMANCE, LOW POWER 1M X 1 BIT FAST PAGE MODE CMOS DYNAMIC RAM 60/60L 70/70L 80/80L Max. RAS Access Time, 0RAC 60 ns 70 ns 80 ns Max. Column Address Access Time, tCAA) 30 ns 35 ns 40 ns Max. CAS Access Time, (tCAC)


    OCR Scan     		PDF V53C1 60/60L 70/70L 80/80L V53C100F V53C100FL V53C100F-80 VS3C100F V53C100F

    v52c4258

    Abstract: No abstract text available
    Text: M O S E L V IT E U C V52C4258 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 512X 4 SAM HIGH PERFORMANCE V52C4258 60 70 80 10 60 ns 70 ns 80 ns 100 ns Max. CAS Access Time, tcAc 15 ns 20 ns 25 ns 25 ns Max. Column Address Access Time, ( t^ ) 30 ns 35 ns 40 ns


    OCR Scan     		PDF V52C4258 V52C4258 b3533Tl 000311b

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V IT E L IC V53C16258H HIGH PERFORMANCE 2 5 6 K X 16 EDO PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 30 35 40 45 50 Max. RÂ3 Access Time, Irac 30 ns 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (^ aa) 16 ns 18 ns 20 ns 22 ns 24 ns Min. Extended Data Out Mode Cycle Time, (1pC)


    OCR Scan     		PDF V53C16258H 16-bit

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V tT E L iC MS621002A 256K x 4 CMOS STATIC RAM Features Description • ■ ■ ■ ■ ■ ■ ■ The MS621002A is a high speed 1M-bit static RAM organized as 256K x_4. Fully static in operation, the Chip Enable E reduces power to the chip when HIGH. Standby power drops to its


    OCR Scan     		PDF MS621002A MS621002A 400-Mil Functional621002A 3S33Tl

    Untitled

    Abstract: No abstract text available
    Text: M O SEL VITELIC V53C808H HIGH PERFORMANCE 1Mx 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM HIGH PERFORM ANCE PRELIMINARY 35 40 45 50 Max. RAS Access Time, tRAc 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (^ aa) 18 ns 20 ns 22 ns 24 ns Min. Extended Data Out Mode Cycle Time, (tpC)


    OCR Scan     		PDF V53C808H V53C808H b3S33 00Q4325 28-Pin 00G432b