7202A
Abstract: No abstract text available
Text: M OSEL V ITEU C MS7200U7201AL/7202AL 256x9,512x9, 1Kx9 CMOS FIFO Features Descriptions • First-In/First-Out static RAM based dual port memory ■ Three densities in a x9 configuration ■ Low power versions ■ Includes empty, full, and half full status flags
|
OCR Scan
|
MS7200U7201AL/7202AL
256x9
512x9,
MS7200L/7201AL/7202AL
MS7200-25NC
MS7200-25JC
MS7200-25FC
MS7200-35NQ
MS7200-35JC
MS7200-35FC
7202A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC V53C16258H 256KX 16 PAGE MODE CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT HIGH PERFORMANCE PRELIMINARY 40 45 50 60 Max. R A S Access Time, tf^c 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA) 20 ns 22 ns 24 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)
|
OCR Scan
|
V53C16258H
256KX
110ns
V53C16258H
0003L24
40-Pin
DD03bPS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M O S E L V IT E L IC V53C8257H U LTR A -HIG H SPEED, 256KX 8B IT P A G E M O D E WITH E X TE N D E D DATA O U T P U T ED O A N D C A S B U R S T M O D E CM O S D YN A M IC R A M PR E LIM IN A R Y 45/45L 50/50L 55/55L 60/60L Max. RAS Access Time, Orac)
|
OCR Scan
|
V53C8257H
256KX
45/45L
50/50L
55/55L
60/60L
V53C8257H
VS3C8257H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M O SE L VITELIC PRELIMINARY V62C518256 32Kx8 BIT STATIC RAM Features Description • High-speed: 35,45, 55, 70 ns ■ Ultra low DC operating current of 5mA Max. ■ Low Power dissipation: TTL Standby: 3mA (Max.) CMOS Standby: 20n.A (Max.) ■ Fully static operation
|
OCR Scan
|
V62C518256
32Kx8
28-pin
V62C518256
144-bit
b3533Tl
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M O SEL V tTE LiC V53C8512N 3.3 VOLT, LO W POWER 512K x 8 AN D 5 1 2 K x 9 B IT FA S T PAGE MODE CMOS DYNAMIC RAM PRELIM INARY HIGH PERFORMANCE V53C8512N 60/60L 70/70L M ax. R A S A cce ss T im e, Orac 6 0 ns 70 ns M ax. C o lum n A d dre ss A cce ss T im e , tCAA)
|
OCR Scan
|
V53C8512N
60/60L
70/70L
V53C8S12NL
V53C8512N
January199S
b3S33
|
PDF
|
kexz
Abstract: No abstract text available
Text: MOSEL-VITELIC b2E » MOSEL-VITELIC • b3533Tl GGGS33L. GES ■ M O V I V104J232, V104J236 512K X 32, 512K x 36 SIMM PRELIMINARY Features Description a 524,288 x 32 bit or 524,288 x 36 bit The V104J232 Memory Module is organized as 524,288 x 32 bits in a 72-lead single-in-line module.
|
OCR Scan
|
b3533Tl
GGGS33L.
V104J232,
V104J236
72-lead
V104J232
QDQE34A
104J232/236
kexz
|
PDF
|
mrah
Abstract: No abstract text available
Text: M O SE L VÊTEUC V53C104N H IG H PERFO RM ANCE, 3.3 VO LT 2 5 6 K X 4 B IT F A S T P A G E M O D E C MOS D YN A M IC R A M HIGH PERFORMANCE V53C104N 60/60L 70/70L 80/80L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA)
|
OCR Scan
|
V53C104N
V53C104N
60/60L
70/70L
80/80L
V53C104NL
V53C104N-80
mrah
|
PDF
|
V53C104D
Abstract: No abstract text available
Text: M O S E L V IT E U C V53C104D HIGH PERFORMANCE, LO W POWER 256K X 4 B IT FAS T PAG E MODE CMOS DYNAMIC RAM PRELIMINARY 60 HIGH PERFORMANCE V53C104D 70 80 Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, 0CAA) 30 ns 35 ns 40 ns
|
OCR Scan
|
V53C104D
V53C104D
V53C104D-80
V53C104D-1
V53C104t
b3S33Tl
D2731
|
PDF
|
6264l
Abstract: No abstract text available
Text: M O SE L VTTEUC M S6264L 8 K x 8 CMOS STATIC RAM Features Description • Available in 70/100 ns Max. ■ Automatic power-down when chip disabled ■ Lower power consumption: MS6264L — 467.5mW (Max.) Operating — 16.5mW (Max.) Standby — 500|iW (Max.) Standby
|
OCR Scan
|
S6264L
MS6264L
MS6264L
S6264L-70PC
S6264L-70FC
S6264L-10PC
S6264L-10FC
6264L
3S3311
00Q3MEÃ
6264l
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M O S E L VITELÊC MS7203U7204L 2K X 9, 4K X 9 CMOS FIFO Features Description • First-In/First-Out static RAM based dual port memory ■ Two densities 2K and 4K in a x9 configuration ■ Low power versions ■ Includes empty, full, and half full status flags
|
OCR Scan
|
MS7203U7204L
MS7203L/7204L
MS7203-50PC
MS7204-50PC
MS7203-50NC
MS7204-50NC
MS7203-50JC
MS7204-50JC
MS7203-50FC
MS7204-50FC
|
PDF
|
V53C16258H
Abstract: 3bld
Text: MOSEL VITELIC V53C16258H 256KX 16 PAGE MODE CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT HIGH PERFORMANCE PRELIMINARY 40 45 50 60 Max. R A S Access Time, tf^c 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA) 20 ns 22 ns 24 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)
|
OCR Scan
|
V53C16258H
256KX
16-bit
40-pin
0003L24
V53C16258H
3bld
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC V53C511740500 4M X 4 EDO PA GE MODE CMOS DYNAMIC RAM V53C511740500 50 60 70 Max. RAS Access Time, Irac 50 ns 60 ns 70 ns Max. Column Address Access Time, ( ^ aa ) 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, (fo ) 20 ns 25 ns
|
OCR Scan
|
V53C511740500
V53C511740500
cycles/32
24/26-pin
DDl42c
0004ET2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4öE nOSEL-VITELIC D ^3533^1 MOSEL OOOOfil? novi 4 MS62256B ADVANCE INFORMATION 32K x 8 CMOS Static RAM T -4 6 -2 3 -1 4 FEATURES DESCRIPTION • High-speed - 70/100/120/150 ns The MOSEL MS62256B is a 262,144-bit static random access memory organized as 32,768 words by 8 bits and
|
OCR Scan
|
MS62256B
440mW
MS62256B)
MS62256BL/BLL)
MS62256B
144-bit
3S33Tl
MS62256B-70PC
MS62256B-70FC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M OSEL VITELIC V53C1 OOF FAMILY HIGH PERFORMANCE, LOW POWER 1M X 1 BIT FAST PAGE MODE CMOS DYNAMIC RAM 60/60L 70/70L 80/80L Max. RAS Access Time, 0RAC 60 ns 70 ns 80 ns Max. Column Address Access Time, tCAA) 30 ns 35 ns 40 ns Max. CAS Access Time, (tCAC)
|
OCR Scan
|
V53C1
60/60L
70/70L
80/80L
V53C100F
V53C100FL
V53C100F-80
VS3C100F
V53C100F
|
PDF
|
|
v52c4258
Abstract: No abstract text available
Text: M O S E L V IT E U C V52C4258 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 512X 4 SAM HIGH PERFORMANCE V52C4258 60 70 80 10 60 ns 70 ns 80 ns 100 ns Max. CAS Access Time, tcAc 15 ns 20 ns 25 ns 25 ns Max. Column Address Access Time, ( t^ ) 30 ns 35 ns 40 ns
|
OCR Scan
|
V52C4258
V52C4258
b3533Tl
000311b
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M O S E L V IT E L IC V53C16258H HIGH PERFORMANCE 2 5 6 K X 16 EDO PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 30 35 40 45 50 Max. RÂ3 Access Time, Irac 30 ns 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (^ aa) 16 ns 18 ns 20 ns 22 ns 24 ns Min. Extended Data Out Mode Cycle Time, (1pC)
|
OCR Scan
|
V53C16258H
16-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M O S E L V tT E L iC MS621002A 256K x 4 CMOS STATIC RAM Features Description • ■ ■ ■ ■ ■ ■ ■ The MS621002A is a high speed 1M-bit static RAM organized as 256K x_4. Fully static in operation, the Chip Enable E reduces power to the chip when HIGH. Standby power drops to its
|
OCR Scan
|
MS621002A
MS621002A
400-Mil
Functional621002A
3S33Tl
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M O SEL VITELIC V53C808H HIGH PERFORMANCE 1Mx 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM HIGH PERFORM ANCE PRELIMINARY 35 40 45 50 Max. RAS Access Time, tRAc 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (^ aa) 18 ns 20 ns 22 ns 24 ns Min. Extended Data Out Mode Cycle Time, (tpC)
|
OCR Scan
|
V53C808H
V53C808H
b3S33
00Q4325
28-Pin
00G432b
|
PDF
|