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    3SJ11 Search Results

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    3SJ11 Price and Stock

    Panasonic Electronic Components ERG-3SJ110A

    RES 11 OHM 5% 3W AXIAL
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    DigiKey ERG-3SJ110A Reel 3,000 1,500
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    Panasonic Electronic Components ERG-3SJ110

    RES 11 OHM 5% 3W AXIAL
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    DigiKey ERG-3SJ110 Bulk 1,163 1
    • 1 $0.56
    • 10 $0.319
    • 100 $0.1889
    • 1000 $0.11806
    • 10000 $0.11806
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    Panasonic Electronic Components ERG-3SJ113

    RES 11K OHM 5% 3W AXIAL
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    Panasonic Electronic Components ERG-3SJ111

    RES 110 OHM 5% 3W AXIAL
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    Panasonic Electronic Components ERG-3SJ112

    RES 1.1K OHM 5% 3W AXIAL
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    Bristol Electronics ERG-3SJ112 2,000 9
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    3SJ11 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3SJ11 Unknown FET Data Book Scan PDF
    3SJ11 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    3SJ11 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    3SJ11A Unknown FET Data Book Scan PDF
    3SJ11A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3SJ11A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    3SJ11A NEC P-Channel Enhancement MOS Field Effect Transistor Scan PDF

    3SJ11 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


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    handbook of shipboard electromagnetic shielding practices

    Abstract: ASTM-A-753 MIL-B-857 MIL-STD-463 s41 hall effect sensor s41 hall effect sensor s41 s41 hall effect sensor S9300-AW-EDG-010 Bendix synchro control transformer MIL-C-915
    Text: S9407-AB-HBK-010 Revision 2 HANDBOOK OF SHIPBOARD ELECTROMAGNETIC SHIELDING PRACTICES This document supersedes S9407-AB-HBK-010, Revision 1 date published 30 September 1989 APPROVED FOR PUBLIC RELEASE; DISTRIBUTION IS UNLIMITED Published by Direction of Commander, Naval Sea Systems Command


    Original
    S9407-AB-HBK-010 S9407-AB-HBK-010, S9407-AB-HBK-010 03Z44, 05H31, 08K/CHABAY) PMS303A41, handbook of shipboard electromagnetic shielding practices ASTM-A-753 MIL-B-857 MIL-STD-463 s41 hall effect sensor s41 hall effect sensor s41 s41 hall effect sensor S9300-AW-EDG-010 Bendix synchro control transformer MIL-C-915 PDF

    2N3609

    Abstract: 2N4120 2N4067 2N5548 diode 600m nec 500t 3sj11a 3n156 3N155 to99 mosfet
    Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (S) Max (V) elN Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style P-Chann I Enhanc ment-Typ , (Cont'd) 5 10 15 20 25 30 TP0102N3 TPOS02N3


    Original
    TP0102N3 TPOS02N3 TP0102N2 TP0602N2 2N3609 MFE823 2N4352 3N208 2N4120 2N4067 2N5548 diode 600m nec 500t 3sj11a 3n156 3N155 to99 mosfet PDF

    3SJ11

    Abstract: 3SJ11A
    Text: 3SJ11A 3SJ11A > h J K M O S « * # J R h = 7 \ s i > 7 . 9 P-Channel E nh.nc.m en t M O S R eld -E ffo ct T ra n sisto r H igh In p u t Im p e d a n c e DC A m p lifier In d u s tria l Us 3 S J U A I : P 'f ’ r f 7. f > •*_— K M O S K E T t 4 fc rtx * / -fk L tt e W i'ilt tC .


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    3SJ11A 3SJ11 lu--10 3SJ11A PDF

    2SC631

    Abstract: 2SC632 2SC634 2n7471 A608 transistor pnp 2N7481 ZA-14 FV918 2N625 J3030
    Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,


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    B170024 4000n 2SC631 2SC632 2SC634 2n7471 A608 transistor pnp 2N7481 ZA-14 FV918 2N625 J3030 PDF

    U22 2.5A 250V

    Abstract: P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C


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    NPN110. THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 U22 2.5A 250V P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644 PDF

    3SK164

    Abstract: 3SK14 NEC 3sk21 3SK20 3sk30 3SK30A 2SK2132 3SK30A D,S,G1,G2 3SK33 LM 1011
    Text: - 128 - H f m £ tt ffl « & m & vm * K V A £ Vos* m * (V) X fr * fê S l* IS P d /P c h (A) 1* (W) loss (max) (A) Vg s (V) W (Ta=25*C) 14 (min) (max) V d s (V) (V) (V) (min) (max) V d s (A) (A) (V) 9m (min) (S) { \ l f Id (A) Vd s (V) Id (A) HS SW MOS


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    2SK2044 2SK2045 2SK2053 2SK2054 2SK2055 3SK16 3SK17 20nsmax. 25nsmax 3SK18 3SK164 3SK14 NEC 3sk21 3SK20 3sk30 3SK30A 2SK2132 3SK30A D,S,G1,G2 3SK33 LM 1011 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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