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    4 CHANNEL N FET Search Results

    4 CHANNEL N FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    4 CHANNEL N FET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MCA002 MECHANICAL DATA Dimensions in mm inches MULTI CHIP ARRAY 4 COMMON SOURCE P-CHANNEL MOSFETS AND 4 COMMON SOURCE N-CHANNEL FETS DESCRIPTION The MCA002 is a ceramic surface mount MOSFET array designed for high reliability applications. It contains 4 common source P Channel and 4 N Channel


    Original     		MCA002 MCA002 PDF

    d467

    Abstract: No abstract text available
    Text: MCA002 MECHANICAL DATA Dimensions in mm inches MULTI CHIP ARRAY 4 COMMON SOURCE P-CHANNEL MOSFETS AND 4 COMMON SOURCE N-CHANNEL FETS DESCRIPTION The MCA002 is a ceramic surface mount MOSFET array designed for high reliability applications. It contains 4 common source P Channel and 4 N Channel


    Original     		MCA002 MCA002 200mA d467 PDF

    4AM12

    Abstract: SP-10 Hitachi DSA0046
    Text: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.12 , VGS = –10 V, I D = –4 A • Capable of 4 V gate drive


    Original     		4AM12 SP-10 4AM12 SP-10 Hitachi DSA0046 PDF

    Hitachi DSA002723

    Abstract: No abstract text available
    Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –4 A • Capable of 4 V gate drive


    Original     		6AM12 SP-12TA Hitachi DSA002723 PDF

    Hitachi DSA002727

    Abstract: No abstract text available
    Text: 4AM14 Silicon N-Channel/P-Channel Complementary Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –4 A • Capable of 4 V gate drive


    Original     		4AM14 SP-12TA Hitachi DSA002727 PDF

    2SJ173

    Abstract: 2SJ176 2SK1094 2SK971 4AM12 Hitachi 2SJ Hitachi DSA00305
    Text: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.12 Ω, VGS = –10 V, I D = –4 A • Capable of 4 V gate drive


    Original     		4AM12 2SK971, 2SK1094 2SJ173, 2SJ176 2SJ173 2SJ176 2SK1094 2SK971 4AM12 Hitachi 2SJ Hitachi DSA00305 PDF

    Hitachi 2SJ

    Abstract: Hitachi DSA002751
    Text: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V, ID = 4 A P-channel: RDS(on) ≤ 0.12 Ω, VGS = –10 V, ID = –4 A • Capable of 4 V gate drive


    Original     		4AM12 2SK971, 2SK1094 2SJ173, 2SJ176 SP-10 D-85622 Hitachi 2SJ Hitachi DSA002751 PDF

    Hitachi 2SJ

    Abstract: Hitachi DSA002751
    Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V, ID = 4 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A


    Original     		6AM12 2SK970 O-220AB) 2SK1093 O-220FM) 2SJ172 2SJ175 Hitachi 2SJ Hitachi DSA002751 PDF

    2SK109

    Abstract: 6am12 2SJ172 2SJ175 2SK1093 2SK970
    Text: 6AM12 Silicon N Channel/P Channel Complementary Power MOS FET Array Application SP-12TA High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V ID = 4 A P-channel: RDS (on) ≤ 0.2 Ω, VGS = –10 V ID = –4 A


    Original     		6AM12 SP-12TA 2SK970 O-220AB) 2SK1093 O-220FM) 2SJ172 2SJ175 2SK109 6am12 2SJ172 2SJ175 2SK1093 2SK970 PDF

    6am12

    Abstract: 2SJ172 2SJ175 2SK1093 2SK970 d3125
    Text: 6AM12 Silicon N Channel/P Channel Complementary Power MOS FET Array Application SP-12TA High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V ID = 4 A P-channel: RDS (on) ≤ 0.2 Ω, VGS = –10 V ID = –4 A


    Original     		6AM12 SP-12TA 2SK970 O-220AB) 2SK1093 O-220FM) 2SJ172 2SJ175 6am12 2SJ172 2SJ175 2SK1093 2SK970 d3125 PDF

    2SJ172

    Abstract: 2SJ175 2SK1093 2SK970 4AM14
    Text: 4AM14 Silicon N Channel/P Channel Complementary Power MOS FET Array Application SP-12TA High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 Ω, VGS = 10 V ID = 4 A P-channel: RDS (on) ≤ 0.2 Ω, VGS = –10 V ID = –4 A


    Original     		4AM14 SP-12TA 2SK970 O-220AB) 2SK1093 O-220FM) 2SJ172 2SJ175 2SJ172 2SJ175 2SK1093 2SK970 4AM14 PDF

    Hitachi 2SJ

    Abstract: Hitachi DSA002751
    Text: 4AM14 Silicon N-Channel/P-Channel Complementary Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ² 0.17 ½, VGS = 10 V, ID = 4 A P-channel: RDS(on) ² 0.2 ½, VGS = –10 V, ID = –4 A


    Original     		4AM14 2SK970 O-220AB) 2SK1093 O-220FM) 2SJ172 2SJ175 Hitachi 2SJ Hitachi DSA002751 PDF

    4AM17

    Abstract: SP-12 Hitachi DSA00315
    Text: 4AM17 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-729 Z 1st. Edition February 1999 Features • Low on-resistance N Channel: R DS(on) ≤0.17 Ω, VGS = 10 V, ID = 4 A P Channel : R DS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A • 4 V gate drive devices.


    Original     		4AM17 ADE-208-729 SP-12 4AM17 SP-12 Hitachi DSA00315 PDF

    4AM17

    Abstract: SP-12
    Text: 4AM17 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-729 Z 1st. Edition February 1999 Features • Low on-resistance N Channel: R DS(on) ≤0.17 Ω, VGS = 10 V, ID = 4 A P Channel : R DS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A • 4 V gate drive devices.


    Original     		4AM17 ADE-208-729 SP-12 4AM17 SP-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4AM14 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N-channel: RDS l nl < 0.17 Q, Vos = 10 V, ID = 4 A P-channel: RDS(on) < 0.2 Q, Vos = -1 0 V, ID = -4 A • Capable of 4 V gate drive


    OCR Scan     		4AM14 2SK970 O-220AB) 2SK1093 O-220FM) 2SJI72 2SJ175 PDF

    lf7a

    Abstract: No abstract text available
    Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N-channel: RDS on < 0.17 SI, VGS = 10 V, ID= 4 A P-channel: RDS(,m) < 0.2 £2, VGS = -1 0 V, ID= -4 A • Capable of 4 V gate drive


    OCR Scan     		6AM12 2SK970 O-220AB) 2SK1093 O-220FM) 2SJ172 2SJ175 lf7a PDF

    Untitled

    Abstract: No abstract text available
    Text: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N-channel: RDS on| < 0.075 Q, VGS = 10 V, ID = 4 A P-channel: RDS(im < 0.! 2 O, V GS = - 1 0 V, ID = - 4 A • Capable o f 4 V gate drive


    OCR Scan     		4AM12 2SJ173 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4AM16 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • L ow on-resistance N Channel: RDS on>< 0.17 i i , V GS = 10 V, ID = 4 A P Channel: RDS(on < 0.2 Q , V GS = - 10 V, ID = - 4 A • High speed switching


    OCR Scan     		4AM16 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI November 1996 Application High speed power switching Features • • • • • • • Low on-resistance N-channel: RDS o1i < 0.075 ¿1, VGS= 10 V, ID= 4 A P-channel: RDS(o1i) < 0.12 ¿1, VGS= -10 V, ID= -4 A


    OCR Scan     		4AM12 2SK971, 2SK1094 2SJ173, 2SJ176 SP-10 PDF

    NP24N06HLB

    Abstract: NP24N06ILB MOS 6502
    Text: PRELIMINARY PRODUCT INFORMATION M O S Field Effect PowerTransistor N P 2 4 N 0 6 H L B ,N P 2 4 N 0 6 1 L B SW ITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS in millimeter DESCRIPTION This product is N-Channel MOS Field Effect Transistor de­


    OCR Scan     		NP24N06HLB NP24N061LB 70mfi 90mi2 860pF O-251 NP24N06ILB O-252 MOS 6502 PDF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Depletion-Mode 4-Channel DMOS FETArmy calocflc o CORPORATION SD5501 FEATURES DESCRIPTION • • • • The SD5501 is manufactured utilizing Calogic’s proprietary high speed, low capacitance DMOS process featuring an N-Channel depletion-mode design.


    OCR Scan     		SD5501 SD5501 16-pin SD5501N XSD5501 PDF

    Untitled

    Abstract: No abstract text available
    Text: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS o1i < 0.17 ¿1, VGS = 10 V, ID= 4 A P-channel: RDS(o1i) < 0.2 Q, VGS= -10 V, ID= -A A


    OCR Scan     		6AM12 2SK970 T0-220AB) 2SK1093 T0-220FM) 2SJ172 TQ-220AB) 2SJ175 TQ-220FM) PDF

    IC-3328

    Abstract: *PA1520H JUPA1520 MEI-1202 TEB-1035 MOS FET Array
    Text: N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION PACKAGE DIMENSIONS The juPA1520 is N-channel Power MOS FET Array that built in 4 in millimeters circuits designed for solenoid, m otor and lamp driver. 26.8 MAX. 4.0 FEATURES • 4 V driving is possible


    OCR Scan     		uPA1520 10-Pin JiPA1520H IC-3328 *PA1520H JUPA1520 MEI-1202 TEB-1035 MOS FET Array PDF

    TEA-1035

    Abstract: IC-3345 UPA1552 UPA1552H MEI-1202 nec li ion
    Text: N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The juPA1552 is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES • 4 V driving is possible • Large Current and Low On-state Resistance


    OCR Scan     		uPA1552 PA1552H IEI-1209) TEA-1035 IC-3345 UPA1552H MEI-1202 nec li ion PDF