GaAs FET cfy 14
Abstract: marking code s22 GPS05559 Q62703-F97 MARKING code GM SOT 323 SMD Transistor Marking Code 71 SOT 23 smd transistor cfy P-SOT-143-4-1 GaAs FET cfy 19
Text: GaAs FET CFY 30 Data Sheet • Low noise Fmin = 1.4 dB @ 4 GHz • High gain (11.5 dB typ. @ 4 GHz) • For oscillators up to 12 GHz • For amplifiers up to 6 GHz • Ion implanted planar structure • Chip all gold metallization • Chip nitride passivation
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OT-143
Q62703-F97
P-SOT143-4-1
GPS05559
GaAs FET cfy 14
marking code s22
GPS05559
Q62703-F97
MARKING code GM SOT 323
SMD Transistor Marking Code 71 SOT 23
smd transistor cfy
P-SOT-143-4-1
GaAs FET cfy 19
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ATF-25570
Abstract: No abstract text available
Text: 0.5 – 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features • High Output Power: 20.5 dBm Typical P1 dB at 4␣ GHz • Low Noise Figure: 1.0 dB Typical at 4 GHz • High Associated Gain: 14.0␣ dB Typical at 4␣ GHz • Hermetic Gold-Ceramic
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ATF-25570
ATF-25570
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Infineon Technologies transistor 4 ghz
Abstract: No abstract text available
Text: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3 For low current applications For oscillators up to 12 GHz Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding Gms = 23 dB at 1.8 GHz Transition frequency fT = 25 GHz Gold metallization for high reliability
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VPS05605
OT-343
-j100
Nov-17-2000
Infineon Technologies transistor 4 ghz
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Untitled
Abstract: No abstract text available
Text: Whpt H E W L E T T mirÍM P A C K A R D 0 .5 -1 0 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 Features • High O utput Power: 19.0 Bm Typical Pj dB at 4 GHz • High Gain: 12.5 dB Typical Gj dB at 4 GHz • Low N oise Figure: 1.2 dB Typical at 4 GHz
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ATF-25735
ATF-25735
5965-8710E
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420 NPN Silicon RF Transistor
Abstract: transistor 1346 Q62702-F1591 BFP420 VPS05605 RNF50 TP66 zs transistor transistor fc 1013 Semiconductor 1346 transistor
Text: SIEGET 25 BFP 420 NPN Silicon RF Transistor 3 • For high gain low noise amplifiers 4 • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability
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VPS05605
Q62702-F1591
OT-343
45GHz
-j100
Jul-14-1998
420 NPN Silicon RF Transistor
transistor 1346
Q62702-F1591
BFP420
VPS05605
RNF50
TP66
zs transistor
transistor fc 1013
Semiconductor 1346 transistor
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420ECSP
Abstract: BFP420ecsp marking BFP
Text: SIEGET 25 BFP 420ECSP NPN Silicon RF Transistor Preliminary data For oscillators up to 10 GHz XY For high gain low noise amplifiers 4 Noise figure F = 1.15 dB at 1.8 GHz 3 outstanding G ms = 22 dB at 1.8 GHz 1 Transition frequency f T = 25 GHz Gold metallization for high reliability
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420ECSP
Aug-23-2000
420ECSP
BFP420ecsp
marking BFP
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442-22
Abstract: AFM04P3-212 AFM04P3-213 MESFET Characteristic of mesfet
Text: Low Noise/Medium Power GaAs MESFET Chips AFM04P3-212, AFM04P3-213 Features 213 • Low Noise Figure, 0.6 dB @ 4 GHz Drain Source ■ 20 dBm Output Power @ 18 GHz ■ High Associated Gain, 13 dB @ 4 GHz Source Gate Drain ■ High Power Added Efficiency, 25%
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AFM04P3-212,
AFM04P3-213
6/99A
442-22
AFM04P3-212
AFM04P3-213
MESFET
Characteristic of mesfet
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES FEATURES High Accuracy 1 Degree rms Quadrature Error @ 1.9 GHz 0.2 dB l/Q Am plitude Balance @ 1.9 GHz Broad Frequency Range: 0.8 G H z-2.5 GHz Sideband Suppression: -4 6 dBc @ 0.8 GHz Sideband Suppression: -3 6 dBc @ 1.9 GHz M odulation Bandwidth: D C-70 MHz
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16-Lead
AD8346
50kHz/
500kHz
RU-16)
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CFY30
Abstract: CFY 18
Text: SIEMENS CFY30 GaAs FET Datasheet * Low noise Fw„ = 1.4 dB @ 4 G H z * High gain (11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation
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CFY30
Q62703-F97
OT-143
CFY30
CFY 18
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SIEMENS 230 92 O
Abstract: siemens gaas fet gaas fet marking a FET GAAS marking a CFY 18 siemens 230 98 O siemens 230 99 o CFY30 S11 SIEMENS
Text: SIEMENS CFY30 GaAs FET Datasheet * Low noise Fmjn= 1.4 dB @ 4 G H z * High gain ( 11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation
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CFY30
Q62703-F97
OT-143
SIEMENS 230 92 O
siemens gaas fet
gaas fet marking a
FET GAAS marking a
CFY 18
siemens 230 98 O
siemens 230 99 o
CFY30
S11 SIEMENS
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Untitled
Abstract: No abstract text available
Text: What H E W L E T T * mLliMPACKARD Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical PldB at 2.0 GHz 26.5dBmTypicalPldBa t4.0 GHz • High Gain at 1 dB Compression: 12.5dBTypicaIGldBat2.0 GHz
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AT-64023
AT-64023
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L to Ku Band Low Noise GaAs MESFET
Abstract: NE71383B NE71383
Text: L to Ku Band Low Noise NE71383B N-Channel GaAs MESFET NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES 2.5 • LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ at f = 12 GHz 24 • HIGH ASSOCIATED GAIN: 14 dB typ at f = 4 GHz • GATE WIDTH: WG = 280 µm
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NE71383B
NE71383B
24-Hour
L to Ku Band Low Noise GaAs MESFET
NE71383
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Silicon Bipolar Transistor
Abstract: MP4T56800 MP4T568 Medium Power Bipolar Transistors S21E S22E c 1685 transistor
Text: Medium Power, 12 Volt, High fT NPN Silicon Bipolar Transistor MP4T56800 V2.00 Features •High Output Power, 23 dBm P1dB @ 1 GHz •High Gain-Bandwidth Product, 4 GHz fT •High Power Gain, | S21E |2 = 12 dB @ 1 GHz GTU max. = 11 dB @ 2 GHz Description The MP4T568 is a medium power, high fT silicon NPN
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MP4T56800
MP4T568
MP4T56800,
Silicon Bipolar Transistor
MP4T56800
Medium Power Bipolar Transistors
S21E
S22E
c 1685 transistor
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AD5375
Abstract: ADL5375ACPZ-05-WP1 MO-220-VGGD-8 ADL5375 multi-band radio frequency ADL5375-05 ADL5375-15 lfcsp_VQ package
Text: Preliminary Technical Data 400 MHz to 6 GHz Broadband Quadrature Modulator ADL5375 FEATURES FUNCTIONAL BLOCK DIAGRAM Output frequency range: 400 MHz to 6 GHz Modulation bandwidth: 500 MHz 3 dB 1 dB output compression: ≥ 9.4 dBm from 500 MHz to 4 GHz Output return loss: ≤ 15 dB from 500 MHz to 5 GHz
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ADL5375
24-lead
CDMA2000,
CP-24-3
AD5375
ADL5375ACPZ-05-WP1
MO-220-VGGD-8
ADL5375
multi-band radio frequency
ADL5375-05
ADL5375-15
lfcsp_VQ package
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magnum microwave
Abstract: No abstract text available
Text: MAGNUN MICROWAVE CORP ^ DËTJ S722730 GOOOCHM S T- SO-i S V93T-1 VOLTAGE CONTROLLED OSCILLATOR TYPICAL PERFORMANCE FREQUENCY RANGE: 3.9 -4 .8 GHz POWER OUTPUT: 10 mW Min. TUNING VOLTAGE: Oto +25V FREQUENCY GHz $ £ • FAST TUNING • THIN FILM MIC CONSTRUCTION
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S722730
V93T-1
15VDC
magnum microwave
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AT-60500
Abstract: AT60500 Hewlett-Packard AT60500
Text: HEWLETT-PACKARD/ CMPNTS blE ThH% HEW LETT 1"KM PACKARD M 4 4 ? S a 4 DDD' i f l Sa AT-60500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip D Chip Outline1 Features • • • • b43 Low Bias Current Operation Low Noise Figure: 1.8 dB typical at 2.0 GHz
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AT-60500
AT60500
Hewlett-Packard AT60500
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Untitled
Abstract: No abstract text available
Text: AVANTEK I N C 20E 0A V A N TEK D im n tb QGQb43T 1 AT-00510 Up to 4 GHz General Purpose Silicon Bipolar Transistor Avantek 100 mit Package Features • 16.0 dBm typical Pi dB at 2.0 GHz • • • • 10.5 dB typical Gi dB at 2.0 GHz 2.5 dB typical NF0 at 2.0 GHz
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QGQb43T
AT-00510
3lO-37l-87l7or
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GaAs Gunn Diode "94 GHz"
Abstract: gunn diode radar 10 GHz gunn diode
Text: AjfetXm Electronically Tuned Gunn Oscillators 18-140 GHz 6 WG V Series 6-42V & 6-28V Features • ■ ■ ■ ■ ■ ■ Series GaAs or InP Electronic Tuning to 4 GHz Excellent Linearity O utput Power to 200 mW Small and Lightweight Optional Mechanical Tuning
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CRYSTAL ITT TCXO 4 5 MHZ
Abstract: TCXO 10 MHz ITT
Text: FUJITSU SEMICONDUCTOR DATA SHEET ; D S 0 4 -2 1 3 5 4 -1 E ASSP Single Serial Input PLL Frequency Synthesizer On-Chip 2.0 GHz Prescaler MB15E05L • DESCRIPTION The Fujitsu MB15E05L is serial input Phase Locked Loop PLL frequency synthesizer with.a 2.0 GHz prescaler. A
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MB15E05L
MB15E05L
F16013S-2C-4
37M175tj
C16013SC-1-1
CRYSTAL ITT TCXO 4 5 MHZ
TCXO 10 MHz ITT
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AT-64023
Abstract: S21E
Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic
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AT-64023
AT-64023
5965-8916E
S21E
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Frequency Generator 1MHz
Abstract: IFD-53010 IFD-53110
Text: Silicon Bipolar MMIC 3.5 and 5.5 GHz Divide-by-4 Static Prescalers Technical Data IFD-53010 IFD-53110 Features 100 mil Stripline Package • Wide Operating Frequency Range: IFD-53010: 0.15 to 5.5 GHz IFD-53110: 0.15 to 3.5 GHz • Low Phase Noise: -143 dBc/Hz @ 1 kHz Offset
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IFD-53010
IFD-53110
IFD-53010:
IFD-53110:
IFD-53010
IFD-53110
IFD-53110.
Frequency Generator 1MHz
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kaba
Abstract: 149-188
Text: Ka-Band Power GaAs MESFET 61Alpha AFM04P2-000 Features • 21 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -4 0 GHz ■ 0 .25 jj.m Ti/Pt/Au Gates ■ Passivated Surface
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AFM04P2-000
61Alpha
kaba
149-188
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Untitled
Abstract: No abstract text available
Text: ^ 00 4 1 2 5 □□□□□2e] 115 • H T M GaAs MMIC Double-Balanced 5 to 20 GHz Mixer HITTITE MICROWAVE CORPORATION JANUARY 1994 HMC143 HMC144 HMC143 Features CONVERSION LOSS: 10dB 5 TO 20 GHZ RANGE RF & LO DC TO 3 GHZ IF BANDWIDTH General Description
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HMC143
HMC144
HMC143
HMC144
HMC141/142
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Untitled
Abstract: No abstract text available
Text: V •I DIELECTRICALLY STABILIZED MODEL 00110 OSCILLATOR 4.0 GHz MODEL DO-110 Low Phase Noise, - 1 1 0 dBc/Hz Typ @ fo ± 1 0 kHz Stable With Temperature, 2 ppm /°C Typ Internal Voltage Regulator Custom Models Available in the Frequency Range of 4 to 8 GHz
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DO-110
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