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    4 W BALLAST Search Results

    4 W BALLAST Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    UC3872M Texas Instruments Resonant Lamp Ballast Controller 16-SSOP 0 to 70 Visit Texas Instruments Buy
    UC3872MG4 Texas Instruments Resonant Lamp Ballast Controller 16-SSOP 0 to 70 Visit Texas Instruments Buy
    UC3872MTR Texas Instruments Resonant Lamp Ballast Controller 16-SSOP 0 to 70 Visit Texas Instruments Buy

    4 W BALLAST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    resonant half bridge ballast schematic

    Abstract: electronic ballast for fluorescent lighting t8 TMMBAT41 l6585de datasheet t8 ballast circuits general electric cfl transistor ballast fluorescent lamp starter schematic lamp ballast sod-80 SMD schematic PWM inverter
    Text: AN3040 Application note STEVAL-ILB008V1 4 x 18 W/T8 ballast driven by L6585DE Introduction This application note describes a demonstration board able to drive a 4 x 18 W linear T8 fluorescent tubes. The ballast is controlled by the new L6585DE IC that integrates the PFC and half-bridge


    Original     		PDF AN3040 STEVAL-ILB008V1 L6585DE L6585DE resonant half bridge ballast schematic electronic ballast for fluorescent lighting t8 TMMBAT41 l6585de datasheet t8 ballast circuits general electric cfl transistor ballast fluorescent lamp starter schematic lamp ballast sod-80 SMD schematic PWM inverter

    DO214BA

    Abstract: AN3040 DO-214BA STMicroelectronics MAGNETICA EN55015 L6585 L6585DE B32561J6104K000 Zener diode 18V SOD80 magnetica 600
    Text: AN3040 Application note STEVAL-ILB008V1 4 x 18 W/T8 ballast driven by L6585DE Introduction This application note describes a demonstration board able to drive a 4 x 18 W linear T8 fluorescent tubes. The ballast is controlled by the new L6585DE IC that integrates the PFC and half-bridge


    Original     		PDF AN3040 STEVAL-ILB008V1 L6585DE L6585DE DO214BA AN3040 DO-214BA STMicroelectronics MAGNETICA EN55015 L6585 B32561J6104K000 Zener diode 18V SOD80 magnetica 600

    ELECTRONIC BALLAST 4 T8 SCHEMATIC

    Abstract: ELECTRONIC BALLAST 2 LAMP SCHEMATIC ELECTRONIC BALLAST 1 T8 LAMP SCHEMATIC electronic ballast schematic ELECTRONIC BALLAST 3 LAMP SCHEMATIC ELECTRONIC BALLAST 1 LAMP SCHEMATIC t8 ballast circuits schematic diagram Electronic Ballast ELECTRONIC BALLAST st ELECTRONIC BALLAST LAMP SCHEMATIC
    Text: STEVAL-ILB008V1 4 x 18 W wide-range ballast based on the L6585DE combo IC Data brief Features • Input voltage: 90 to 265 VRMS ■ Line frequency: 50/60 Hz ■ Capable of driving 4 x 18 W T8-type tubes ■ Power factor: > 0.98 ■ THD: 10% ■ Average efficiency: 90%


    Original     		PDF STEVAL-ILB008V1 L6585DE EN55015 STEVAL-ILB008V1 ELECTRONIC BALLAST 4 T8 SCHEMATIC ELECTRONIC BALLAST 2 LAMP SCHEMATIC ELECTRONIC BALLAST 1 T8 LAMP SCHEMATIC electronic ballast schematic ELECTRONIC BALLAST 3 LAMP SCHEMATIC ELECTRONIC BALLAST 1 LAMP SCHEMATIC t8 ballast circuits schematic diagram Electronic Ballast ELECTRONIC BALLAST st ELECTRONIC BALLAST LAMP SCHEMATIC

    electronic ballast for fluorescent lighting t8

    Abstract: ELECTRONIC BALLAST 4 T8 SCHEMATIC ELECTRONIC BALLAST 6 LAMP SCHEMATIC ELECTRONIC BALLAST DIAGRAM t8 ballast circuits schematic diagram of energy saving lamps schematic lamp ballast PFC BALLAST CONTROL IC l6585de datasheet ELECTRONIC BALLAST st
    Text: STEVAL-ILB008V1 4 x 18 W wide-range ballast based on the L6585DE combo IC Data brief Features • Input voltage: 90 to 265 VRMS ■ Line frequency: 50/60 Hz ■ Capable of driving 4 x 18 W T8-type tubes ■ Power factor: > 0.98 ■ THD: 10% ■ Average efficiency: 90%


    Original     		PDF STEVAL-ILB008V1 L6585DE EN55015 STEVAL-ILB008V1 electronic ballast for fluorescent lighting t8 ELECTRONIC BALLAST 4 T8 SCHEMATIC ELECTRONIC BALLAST 6 LAMP SCHEMATIC ELECTRONIC BALLAST DIAGRAM t8 ballast circuits schematic diagram of energy saving lamps schematic lamp ballast PFC BALLAST CONTROL IC l6585de datasheet ELECTRONIC BALLAST st

    IR2110 application note

    Abstract: IR2101 full bridge IR2113 APPLICATION NOTE h bridge ir2110 full bridge ir2110 Full-bridge IR2110 IR2112 application note IR2104 APPLICATION NOTE h bridge ir2113 ballast Self-Oscillating
    Text: International Rectifier Control IC Navigator Function Features Voltage Offset 8 Lead DIP 14 Lead DIP 14 Lead DIP w/o leads 4 & 5 16 Lead DIP w/o leads 4 & 5 28 Lead DIP 9 Pin SIP w/o leads 5&7 8 Lead SOIC Narrow Body Basic 600 IR2117 G IR2118 (G) IR2117S (G)


    Original     		PDF IR2117 IR2118 IR2117S IR2118S IR2127 IR2128 IR2127S IR2128S IR2121 IR2125 IR2110 application note IR2101 full bridge IR2113 APPLICATION NOTE h bridge ir2110 full bridge ir2110 Full-bridge IR2110 IR2112 application note IR2104 APPLICATION NOTE h bridge ir2113 ballast Self-Oscillating

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    BGF425W

    Abstract: BFG425W BFG400W BFC425W RT4000 BLV2046 HP 2531 AN98024 BGY1816 BGY1916
    Text: APPLICATION NOTE 50 W base station power amplifier for DCS1800 and PCS1900 AN98024 Philips Semiconductors 50 W base station power amplifier for DCS1800 and PCS1900 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 PRE-DRIVER BFG425W 4 DRIVER (BGY1816/BGY1916) 5 FINAL STAGE (BLV2046)


    Original     		PDF DCS1800 PCS1900 AN98024 BFG425W) BGY1816/BGY1916) BLV2046) BGF425W BFG425W BFG400W BFC425W RT4000 BLV2046 HP 2531 AN98024 BGY1816 BGY1916

    HC1-5504DLC-5

    Abstract: HC1-5504DLC-9 HC3-5504DLC-5 HC3-5504DLC-9 HC4P5504DLC-5 HC4P5504DLC-9 HC-5504 HC-5504DLC HC9P5504DLC-5 HC9P5504DLC-9
    Text: NS DESIG W E N R ED F O 4B1 MEND HC550rt Center at M O d n C a E R B o 4 T p 55 NO S up m/tsc See HCr Technical rsil.co te n u .i o t w tac or w w or c on TERSIL N -I 8 8 1-8 May 1997 HC-5504DLC SLIC Subscriber Line Interface Circuit Features Description


    Original     		PDF 5504B 1-888-I HC-5504DLC HC-5504 50msec. HC-550X HC1-5504DLC-5 HC1-5504DLC-9 HC3-5504DLC-5 HC3-5504DLC-9 HC4P5504DLC-5 HC4P5504DLC-9 HC-5504 HC-5504DLC HC9P5504DLC-5 HC9P5504DLC-9

    B20V1160B

    Abstract: No abstract text available
    Text: BIPOLARICS, INC Part Number B20V1160B SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • High • Common Base Package Configuration Reliability Gold Metallization Nitride Passivation • High Output Power 4 W @ 1.0 GHz • Diffused Ballast Resistors


    Original     		PDF B20V1160B B20V1160B

    B30V1160B

    Abstract: No abstract text available
    Text: BIPOLARICS, INC Part Number B30V1160B SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • High • Common Base Package Configuration Reliability Gold Metallization Nitride Passivation • High Output Power 4 W @ 1.0 GHz • Diffused Ballast Resistors


    Original     		PDF B30V1160B B30V1160B

    JX4454

    Abstract: J1N4148 JV4454 1N4532 MELF DIODE multiple color bands metal detector circuit with pcb 4011 1N4454UB melf diodes color code 1N3064 1N4454-1
    Text: INCH-POUND MIL-PRF-19500/144N w/AMENDMENT 2 1 October 2010 SUPERSEDING MIL-PRF-19500/144N w/AMENDMENT 1 25 January 2010 The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 January 2011. PERFORMANCE SPECIFICATION SHEET


    Original     		PDF MIL-PRF-19500/144N 1N4454-1, 1N4454UR-1, 1N4454UB, 1N4454UBCA, 1N4454UBCC, 1N4454UBD, 1N3064, 1N4532, JX4454 J1N4148 JV4454 1N4532 MELF DIODE multiple color bands metal detector circuit with pcb 4011 1N4454UB melf diodes color code 1N3064 1N4454-1

    SMD DIODE gp 817

    Abstract: smd resistor philips 1206 smd capacitor philips transistor SMD DK philips ceramic capacitors smd SMD Transistor 6f philips smd 1206 resistor SMD TRANSISTOR L6 philips smd 1206 BEP SMD ZENER
    Text: APPLICATION NOTE 15 W class-AB amplifier with the BLV2044 for 1930 − 1990 MHz PCS AN98022 Philips Semiconductors 15 W class-AB amplifier with the BLV2044 for 1930 − 1990 MHz (PCS) CONTENTS 1 INTRODUCTION 2 CIRCUIT DESCRIPTION 3 DC BIAS CIRCUIT 4 RF MEASUREMENT RESULTS


    Original     		PDF BLV2044 AN98022 BLV2044, OT437 SCA57 SMD DIODE gp 817 smd resistor philips 1206 smd capacitor philips transistor SMD DK philips ceramic capacitors smd SMD Transistor 6f philips smd 1206 resistor SMD TRANSISTOR L6 philips smd 1206 BEP SMD ZENER

    358 SMD transistor

    Abstract: smd capacitor philips philips ceramic capacitors smd smd resistor philips 1206 capacitor SMD PHILIPS CERAMIC CAPACITOR SMD PHILIPS transistor SMD DK philips smd 1206 resistor AN98026 SMD Transistor 6f
    Text: APPLICATION NOTE 30 W class-AB amplifier with the BLV2045 for 1930 − 1990 MHz PCS AN98023 Philips Semiconductors 30 W class-AB amplifier with the BLV2045 for 1930 − 1990 MHz (PCS) CONTENTS 1 INTRODUCTION 2 CIRCUIT DESCRIPTION 3 DC BIAS CIRCUIT 4 RF MEASUREMENT RESULTS


    Original     		PDF BLV2045 AN98023 BLV2045, OT390 SCA57 358 SMD transistor smd capacitor philips philips ceramic capacitors smd smd resistor philips 1206 capacitor SMD PHILIPS CERAMIC CAPACITOR SMD PHILIPS transistor SMD DK philips smd 1206 resistor AN98026 SMD Transistor 6f

    2N5591

    Abstract: 2N5590 2N5589 transistor 2N5589 2n5591_
    Text: S G S-"THOMSON Q5C Q | ?cia clS 3 7 T-JS'-u 0 0 0 0 jb fl2 SOLID STATE MICROWAVE 2N 5589 2N 5590 2N5591 THOMSON-CSF COMPONENTS CORPORATION Montgomeryviile, PA 18936 • 215 362-8500 ■ T W X 510-661-7299 3 W /1 0 W /2 4 W, 12.5 V VHF POWER TRANSISTOR DESCRIPTION:


    OCR Scan     		PDF PA18936 2N5589 2N5590 2N5591 MT-71 N5590 transistor 2N5589 2n5591_

    430SS71

    Abstract: No abstract text available
    Text: HARRI S SEfllCOND SECTOR 4 0E D • 4302271 0032532 ~ nri HARRIS -/W T-A* r - i 5 ~ w D ■¡HAS - \ " ] ' H C - 5 5 Q 2 Â \ sue Subsciber Line Interface Circuit W "* August 1991 \ Features Description • Monolithic Integrated Device' ” • Dl High Voltage Process


    OCR Scan     		PDF 50/60H 1000ns 430SS71

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES N E L 2 0 0 1 0 1 -2 4 OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 0.7 W 2.0 W LOW IM DISTORTION Class A Class AB PACKAGE OUTLINE 01 -36 dBc @ 0.5 W PEP (Class A) -33 dBc 0 1.OW PEP (Class AB) HIGH LINEAR GAIN:


    OCR Scan     		PDF NEL200101-24 NEL2001 1N4153

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Series: Type: Style: Aluminium Electrolytic Capacitors/EA Japan EA A Radial Leads 0 4 /J IS C 5 1 4 1 W l- r ' 7 ^ Aluminium Electrolytic Capacitors (Radial Lead Type) SJ8 For Electronic Ballast L o n g Life M in ia tu riz a tio n H ig h R ip p le


    OCR Scan     		PDF

    2N6701

    Abstract: s parameters 4ghz HXTR-5101 4ghz s parameters transistor S21E 4ghz transistor n HPAC-100
    Text: m COM PONENTS LINEAR POWER TRANSISTOR 2N6701 HXTR-5101 Features H IG H P 1dB LIN E A R PO W ER 23 dBm Typical at 2 G Hz 22 dBm Typical at 4 G Hz BIPOLAR 1.0 '0.041 TYP TRANSISTORS HEW LETT W , PACKARD H IG H P1dB G A IN 13 dB Typical at 2 G Hz 7.5 dB Typical at 4 GHz


    OCR Scan     		PDF 2N6701 HXTR-5101) HPAC-100 2N6701 s parameters 4ghz HXTR-5101 4ghz s parameters transistor S21E 4ghz transistor n

    TPV364

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line T P V 36 4 V H F Lin e ar P o w e r T ra n sisto r 10 W — 230 MHz VHF LINEAR POWER TRANSISTOR The TPV364 is a NPN g o ld m e ta llized tra n sisto r using d iffu se d ballast resistors fo r im p ro ve d lin e a rity. This tra n s is to r is designed fo r high p o w e r band ill TV transposers


    OCR Scan     		PDF TPV364

    2SA1044

    Abstract: 2SA10 2SA1043 FT4853 FT4863 2SA-10 2SC2433
    Text: F U J IT S U 2SA1043 2SA WM SILICON HIGH SPEED POWER TRANSISTORS F T4 8 53 (F T4 863 ) S eptem ber 1979 SILICON PNP RING EMITTER TRANSISTOR (RET) T h e 2 S A 1 0 4 3 /2 S A 1 0 4 4 are silicon PNP general purpose, high p o w er sw itching transistors fab rica ted w ith F ujitsu 's u n iq u e Ring E m itte r T ran sis to r ( R E T ) te c h ­


    OCR Scan     		PDF 2SA1043 FT4853) 2SA10 FT4863) 2SA1043/2SA1044 2SA1044 2SA1043 FT4853 FT4863 2SA-10 2SC2433

    STM915-14

    Abstract: No abstract text available
    Text: S G S - 1 H 0 M S 0 N r •UO T «! 5 7 . S T M 9 1 5 -1 4 RF POWER MODULE GSM MOBILE APPLICATIONS . LINEAR PO W ER AM PLIFIER ■ 8 9 0 - 9 1 5 MHz . 12.5 VOLTS . IN PU T/O U TPU T 50 OHM S . P out = 14 W MIN. ■ G A IN = 4 1.5 dB MIN. ORDER CODE BRANDING


    OCR Scan     		PDF STM915-14 STM915-14 7T2T237 D0733bb

    TRANSISTOR BC 157

    Abstract: TRANSISTOR BC 158 BY22B transistor BC 245 c B13 IC marking code Transistor SJ 2517 sj 2518 TRANSISTOR as BC 158 SJ 2517 BFX34
    Text: TELEFUNKEN ELECTRONIC 17E D • f l^ O t n b □QO'353‘3 4 . BUT 93 W IUMFfaimm electronic Creàtiy*T«chnoiosa r - 2 3 - i! Silicon NPN Power Transistor Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique


    OCR Scan     		PDF T0126 15A3DIN TRANSISTOR BC 157 TRANSISTOR BC 158 BY22B transistor BC 245 c B13 IC marking code Transistor SJ 2517 sj 2518 TRANSISTOR as BC 158 SJ 2517 BFX34

    equivalent transistor n 4212

    Abstract: Indiana general ferrite core 2N5071 CF-108-Q2 arco 427 CF-111 ferrite core TA2827 indiana general TRANSISTOR J 4310 EQUIVALENT CF-111
    Text: File No. 269 RF Power T ran sisto rs Solid State Division 2N5071 2 4 -W C W , 76-MHz Em itterBallasted O verlay Transistor Silicon N-P-N Device fo r 2 4 -V o lt A p p lica tio n s in V H F C o m m un icatio ns E q u ip m en t Features: • F o r class B o r class C a m p lifie rs


    OCR Scan     		PDF 2N5071 76-MHz 24-Volt 2N50713 equivalent transistor n 4212 Indiana general ferrite core 2N5071 CF-108-Q2 arco 427 CF-111 ferrite core TA2827 indiana general TRANSISTOR J 4310 EQUIVALENT CF-111