JMK212BJ106M
Abstract: MAX9486 MAX9486EVKIT C1005X7R1H102K EMK105BJ103K
Text: 19-3396; Rev 0; 8/04 MAX9486 Evaluation Kit The MAX9486 EV kit evaluates the MAX9486, a highperformance clock synthesizer with an 8kHz input reference clock. The EV kit provides six buffered 35.328MHz outputs, CLK1–CLK6, and a jitter-suppressed 8kHz output REO. The EV kit operates from a
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MAX9486
MAX9486,
328MHz
MAX9486EVKIT
MAX9486
JMK212BJ106M
MAX9486EVKIT
C1005X7R1H102K
EMK105BJ103K
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k 2679
Abstract: PTFA260451E BCP56 LM7805 INFINEON PHILIPS
Text: PTFA260451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62 – 2.68 GHz Description The PTFA260451E is a thermally-enhanced 45-watt, internallymatched GOLDMOS FET intended for CDMA2000, Super3G 3GPP TSG RAN , and WiMAX applications from 2.62 to 2.68 GHz. Thermallyenhanced packaging provide the coolest operation available. Full
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PTFA260451E
PTFA260451E
45-watt,
CDMA2000,
CDMA2000
k 2679
BCP56
LM7805
INFINEON PHILIPS
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Untitled
Abstract: No abstract text available
Text: PTFA260451E PTFA260451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2.62 – 2.68 GHz Description The PTFA260451E and PTFA260451F are thermally-enhanced 45-watt, internally matched GOLDMOS FETs intended for CDMA2000 applications from 2.62 to 2.68 GHz. Thermally-enhanced
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PTFA260451E
PTFA260451F
45-watt,
CDMA2000
PTFA260451F*
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240101S
Abstract: No abstract text available
Text: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA 2000 applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.
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PTF240101S
PTF240101S
10-watt,
240101S
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PTF240101S
Abstract: LM7805
Text: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA 2000 applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.
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PTF240101S
PTF240101S
10-watt,
LM7805
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Untitled
Abstract: No abstract text available
Text: PTFA260451E PTFA260451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2.62 – 2.68 GHz Description The PTFA260451E and PTFA260451F are thermally-enhanced 45-watt, internally matched GOLDMOS FETs intended for CDMA2000, Super3G 3GPP TSG RAN , and WiMAX applications
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PTFA260451E
PTFA260451F
45-watt,
CDMA2000,
H-30265-2
PTFA260451F*
H-31265-2
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Untitled
Abstract: No abstract text available
Text: User's Guide SLWU046 – October 2006 TRF1115EVM 1 2 3 4 5 Contents Introduction . EVM Test Configuration .
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SLWU046
TRF1115EVM
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LM7805 M SMD
Abstract: LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v
Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small
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PTF180101M
PTF180101M
10-watt
PG-RFP-10
LM7805 M SMD
LM7805 smd
LM7805 footprint
PG-RFP-10
RO4320
smd transistor marking C14 8
LM7805
smd transistor marking L5
LM7805 smd VOLTAGE REGULATOR
elna 50v
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LM7805 smd
Abstract: LM7805 smd 8 pin LM7805 M SMD SMD TRANSISTOR MARKING l4 LM7805 smd transistor marking wa LM7805 05 lm7805 datasheet C17-R2 elna ds
Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small
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PTF180101M
PTF180101M
10-watt
PG-RFP-10
LM7805 smd
LM7805 smd 8 pin
LM7805 M SMD
SMD TRANSISTOR MARKING l4
LM7805
smd transistor marking wa
LM7805 05
lm7805 datasheet
C17-R2
elna ds
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Application Notes on LM7805
Abstract: lm7805 lm7805 p PCC104BCTND PCC104bct-nd ATC 4r7 capacitor 100b LM7805 05 PTF240101S BCP56 ceramic capacitor 47 pf
Text: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA2000 and WiMAX applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.
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PTF240101S
PTF240101S
10-watt,
CDMA2000
Application Notes on LM7805
lm7805
lm7805 p
PCC104BCTND
PCC104bct-nd
ATC 4r7 capacitor 100b
LM7805 05
BCP56
ceramic capacitor 47 pf
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LM7805 M SMD
Abstract: LM7805 smd C5 MARKING TRANSISTOR lm7805 datasheet future LM7805 smd 8 pin elna 50v transistor smd marking ND LM7805 PTF180101M TPSE106K050R0400
Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small
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PTF180101M
PTF180101M
10-watt
LM7805 M SMD
LM7805 smd
C5 MARKING TRANSISTOR
lm7805 datasheet future
LM7805 smd 8 pin
elna 50v
transistor smd marking ND
LM7805
TPSE106K050R0400
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LM7805 smd
Abstract: LM7805 smd transistor marking C14
Text: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency
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PTF180101M
PTF180101M
10-watt
PTF180101M*
TSSOP-10
LM7805 smd
LM7805
smd transistor marking C14
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LM7805
Abstract: PCC104BCTND PCC104bct-nd H-32259-2 rf transistor 2.5GHz 240101S
Text: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA2000 and WiMAX applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.
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PTF240101S
PTF240101S
10-watt,
CDMA2000
H-32259-2
LM7805
PCC104BCTND
PCC104bct-nd
H-32259-2
rf transistor 2.5GHz
240101S
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BNX022-01
Abstract: LQM2MPN4R7NG0 LQW21HN1R0J00 BNX023-01 LQM21PN1R0MC0 NCP18WF104F3SRB capacitor trimmer 50pf 250v MM4829-2702 BNX022-01 Datasheet GCM15-KIT
Text: 2009 DESIGN ENGINEERING KITS CATALOG NO. G-06-F Please visit our website: www.murata.com DESIGN ENGINEERING KITS Murata offers a complete selection of Design Engineering Kits specifically intended to aid the design engineer in prototyping applications. Each kit
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G-06-F
com/catalog/o30e8
BNX022-01
LQM2MPN4R7NG0
LQW21HN1R0J00
BNX023-01
LQM21PN1R0MC0
NCP18WF104F3SRB
capacitor trimmer 50pf 250v
MM4829-2702
BNX022-01 Datasheet
GCM15-KIT
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Untitled
Abstract: No abstract text available
Text: A D S -944 F o ^ n E i L 5MHz, 14-Bit Sampling A/D Converter INNOVATION an d EXCELLENCE FEATURES • • • • • • • • 14-Bit resolution 5MHz minimum sampling rate No missing codes over full military temperature range Edge-triggered, no pipeline delay
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14-Bit
14-Bit
32-pin
ADS-944
14-bit,
-77dB
8B0-444
2b515bl
0D02bbl
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Untitled
Abstract: No abstract text available
Text: APR i 15 !38? i'O A D S -9 2 6 k ^ T E L ' 500kHz, 14-Bit, Low-Power Sampling A/D Converter INNOVATION a n d EXCELLENCE . -PS* s . , . -, : V -O -V,. . O M » *> V f *’ « FEATURES • 14-Bit resolution • 500kHz sampling rate • No missing codes • Functionally complete
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500kHz,
14-Bit,
14-Bit
500kHz
24-pin
ADS-926
MIL-STD-883
DS-0265
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Untitled
Abstract: No abstract text available
Text: & E 3A T E L A D S -1 1 2 12-Bit, 1MHz, Low-Power Sampling A/D Converters IN N O V A T IO N a n d E X C E L L E N C E FEATURES • • • • • • • • 12-Bit resolution No m issing codes 1MHz m inim um sam pling rate Functionally complete Small 24-pin DDIP
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12-Bit,
12-Bit
24-pin
ADS-112
MIL-STD-883
ADS-112)
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Untitled
Abstract: No abstract text available
Text: ADS-944 B d A T E L 14-Bit, 5MHz Sampling A/D Converters IN N O V A T IO N a n d E X C E L L E N C E FEATURES • • • • • • • • • 14-Bit resolution 5MHz minimum sampling rate No missing codes over full military temperature range Edge-triggered, no pipeline delay
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ADS-944
14-Bit,
14-Bit
32-pin,
MIL-STD-883
ADS-944
ADS-B944
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Untitled
Abstract: No abstract text available
Text: 9 D A T E ADS-931 L 16-Bit, 1MHz Sampling A/D Converters INNOVATION and EXCELLENCE PRELIMINARY PRODUCT DATA FEATURES • • • • • • • • • 16-Bit resolution 1MHz sampling rate Functionally complete No missing codes over full military temperature range
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ADS-931
16-Bit,
16-Bit
40-pin,
-89dB
ADS-931
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Untitled
Abstract: No abstract text available
Text: l ' E M n E A D S -930 U 16-Bit, 500kHz Sampling A/D Converter IN N O V A T IO N a n d E X C E L L E N C E FEATURES • • • • • • • • • 16-Bit resolution 500kHz sampling rate Functionally complete Excellent dynamic performance 83dB SNR, -89dB THD
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16-Bit,
500kHz
16-Bit
500kHz
-89dB
40-pin
ADS-930
EbS15bl
DS-0258C
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Untitled
Abstract: No abstract text available
Text: ADS-931 □M n 16-Bit, 1MHz Sampling A/D Converter INNOVATION and EXCELLENCE PRELIMINARY PRODUCT DATA FEATURES 16-Bit resolution 1MHz minimum sampling rate No missing codes over full military temperature range Edge-triggered, no pipeline delay Low-power, 2.9 Watts
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ADS-931
16-Bit,
16-Bit
40-pin
ADS-931
G002b34
DS-0307
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XR-5451
Abstract: bbe sound 5451 exar XR5451
Text: XR-5451 BBE Stereo Sound Enhancement Processor PIN ASSIGNMENT GENERAL DESCRIPTION VflEF The XR-5451 is a matched pair of sound enhance ment processors using the patented BBE® Sound Enhancement technique to provide more lifelike audio to reproduced sound regardless of its source.
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XR-5451
XR-5451.
XR-5451
i22nF
-10nF
bbe sound
5451 exar
XR5451
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s927
Abstract: No abstract text available
Text: ADS-927 B D A T E L 14-Bit, 1MHz, Low-Power Sampling A/D Converters IN N O V A T IO N a n d E X C E L L E N C E FEATURES • • • • • • • • 14-Bit resolution 1 MHz sampling rate No missing codes Functionally complete Small 24-pin DDIP or SMT package
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ADS-927
14-Bit,
14-Bit
24-pin
ADS-927
-80dB.
s927
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XR-5451
Abstract: 5451 xr5451 sound filter circuit diagram precision rectifier voltage controlled amplifier bbe sound EXAR BBE
Text: Tß? E X A R XR-5451 BBE Stereo Sound Enhancement Processor PIN ASSIGNMENT GENERAL DESCRIPTION VREF The XR-5451 is a matched pair of sound enhance ment processors using the patented BBE® Sound Enhancement technique to provide more lifelike audio to reproduced sound regardless of its source.
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XR-5451
XR-5451
i22nF
-10nF
5451
xr5451
sound filter circuit diagram
precision rectifier
voltage controlled amplifier
bbe sound
EXAR BBE
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