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    S5J53

    Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
    Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction


    OCR Scan     		PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753

    MIG30J103H

    Abstract: LCA145 30J103H 200J2 TOSHIBA IGBT snubber diode 119 MIG100Q201H 50j201 M1G5 inverter IGBT 3 phases
    Text: TOSHIBA [6 ] Description of the Intelligent GTR Modules [6 ] Description of the Intelligent GTR Module 117 TOSHIBA 2. [6 ] Description of the Intelligent GTR Modules Ratings and Use 2.1 16 2.1.1 Pin Sym bo l D e fin itio n s 15 M 13 12 11 10 9 8 1. G N D U


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