95051
Abstract: No abstract text available
Text: G -LINK GLT440L08 512K X 8 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Oct 2001 Rev.2.0 Features : Description : ∗ ∗ ∗ The GLT440L08 is a 524,288 x 8 bit highperformance CMOS dynamic random access memory. The GLT440L08 offers Fast Page mode with Extended Data Output has asymmetric address
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GLT440L08
GLT440L08
1024-cycle
Current-160mA
300mil
330mil
445mil
400mil
95051
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CY7C1041BV33
Abstract: CY7C1041CV33 CY7C1041CV33-10BAXI CY7C1041CV33-10BAXC
Text: CY7C1041CV33 4-Mbit 256K x 16 Static RAM Functional Description[1] Features • Pin equivalent to CY7C1041BV33 The CY7C1041CV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. • Temperature Ranges Writing to the device is accomplished by taking Chip Enable
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CY7C1041CV33
CY7C1041BV33
CY7C1041CV33
I/O15)
125Specs
CY7C1041BV33
CY7C1041CV33-10BAXI
CY7C1041CV33-10BAXC
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CY7C1041BV33
Abstract: CY7C1041CV33 CY7C1041CV33-12VXI CY7C1041CV33-20ZXC CY7C1042CV33
Text: CY7C1041CV33 4-Mbit 256K x 16 Static RAM Functional Description[1] Features • Pin equivalent to CY7C1041BV33 The CY7C1041CV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. • Temperature Ranges Writing to the device is accomplished by taking Chip Enable
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CY7C1041CV33
CY7C1041BV33
CY7C1041CV33
I/O15)
125et
CY7C1041BV33
CY7C1041CV33-12VXI
CY7C1041CV33-20ZXC
CY7C1042CV33
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130mA
Abstract: No abstract text available
Text: G -LINK GLT441L08 512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE Oct 2001 Rev. 1.0 Features : Description : ∗ ∗ ∗ ∗ Fast access time and cycle time. Low power dissipation. ∗ ∗ ∗ ∗ CAS -Before-RAS Refresh, Hidden Refresh and Test Mode Capability.
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GLT441L08
cycles/16ms.
28-pin
400milSOJ/TSOP
GLT441L08
1024-cycle
T00mil
600mil)
130mA
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Untitled
Abstract: No abstract text available
Text: SMART SM5361640U4PXUU Modular Technologies December 16, 1998 Revision History • December 16, 1998 Modified DC characteristics on page 4. • August 9, 1998 Datasheet Released. Corporate Headquarters: 4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
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SM5361640U4PXUU
64MByte
16Mx4
72-pin
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AE4E
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6926 Advance Information 128K x 8 Bit Fast Static Random Access Memory WJ PACKAGE 400MILSOJ CASE 857A-02 The MCM6926 is a 1,048,576 bit static random access memory organized as 131,072 words of 3 bits. Static design eliminates the need for external clocks or
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MCM6926
MCM6926
MCM6926WJ8
MCM6926WJ8R
MCM6926WJ10
MCM6926WJ10R
MCM6926WJ12
MCM6926WJ12R
MCM6926WJ15
MCM6926WJ15R
AE4E
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Untitled
Abstract: No abstract text available
Text: IBM0118165 IBM0118165M IBM0118165B IBM0118165P 1 M x 16 10/10 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 1024 Refresh Cycles - 16 ms Refresh Rate (SP version)
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IBM0118165
IBM0118165M
IBM0118165B
IBM0118165P
130mA.
165mA
105mA.
200nA
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