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    400V 20A ULTRA FAST RECOVERY DIODE Search Results

    400V 20A ULTRA FAST RECOVERY DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    400V 20A ULTRA FAST RECOVERY DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    vrrm 400v if 20A ultra fast recovery diode

    Abstract: 400v 20A ultra fast recovery diode
    Text: FFA20U40DN FFA20U40DN Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-3P 1 2 3 1. Anode 2.Cathode 3. Anode ULTRA FAST RECOVERY POWER RECTIFIER


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    FFA20U40DN vrrm 400v if 20A ultra fast recovery diode 400v 20A ultra fast recovery diode PDF

    FFPF20U40S

    Abstract: No abstract text available
    Text: FFPF20U40S FFPF20U40S Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220F 1 2 1. Cathode 2. Anode ULTRA FAST RECOVERY RECTIFIER


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    FFPF20U40S O-220F FFPF20U40S PDF

    SMPS CIRCUIT DIAGRAM 5V 20A

    Abstract: 400v 20A ultra fast recovery diode 20MT120UF diode 10a 400v
    Text: I27124 rev. D 02/03 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery


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    I27124 20MT120UF E78996) 20KHz SMPS CIRCUIT DIAGRAM 5V 20A 400v 20A ultra fast recovery diode 20MT120UF diode 10a 400v PDF

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    Abstract: No abstract text available
    Text: 5/13/02 5/ Bulletin I27124 rev. A 05/02 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with


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    I27124 20MT120UF E78996) 20KHz PDF

    ultrafast diode 10a 400v

    Abstract: X 0238 CE
    Text: 5/13/02 Bulletin I27124 rev. B 10/02 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with


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    I27124 20MT120UF E78996) 20KHz ultrafast diode 10a 400v X 0238 CE PDF

    Untitled

    Abstract: No abstract text available
    Text: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery


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    20MT120UF E78996) 20KHz 08-Mar-07 PDF

    ir igbt 1200V 40A

    Abstract: 20MT120UF E78996 bridge
    Text: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery


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    20MT120UF E78996) 20KHz 12-Mar-07 ir igbt 1200V 40A 20MT120UF E78996 bridge PDF

    10a 400V ultra fast diode d2pak

    Abstract: IRGS4064DPBF IRGS4064 ultrafast diode 10a 400v igbt 600V
    Text: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C


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    IRGS4064DPbF EIA-418. 10a 400V ultra fast diode d2pak IRGS4064DPBF IRGS4064 ultrafast diode 10a 400v igbt 600V PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C


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    IRGS4064DPbF EIA-418. PDF

    diode 10a 400v

    Abstract: ultrafast diode 10a 400v 600v 10A ultra fast recovery diode IRF1010 IRGB4064DPBF
    Text: PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA


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    IRGB4064DPbF O-220AB diode 10a 400v ultrafast diode 10a 400v 600v 10A ultra fast recovery diode IRF1010 IRGB4064DPBF PDF

    IRF1010

    Abstract: ultrafast diode 10a 400v
    Text: PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA


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    IRGB4064DPbF IRF1010 O-220AB IRF1010 ultrafast diode 10a 400v PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA


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    IRGB4064DPbF O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: AUIRGP65G40D0 AUIRGF65G40D0 AUTOMOTIVE GRADE ULTRAFAST IGBT WITH ULTRAFAST SOFT RECOVERY DIODE CooliRIGBT Features • • • • • • • Designed And Qualified for Automotive Applications Ultra Fast Switching IGBT:70-200kHz Extremely Low Switching Losses


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    AUIRGP65G40D0 AUIRGF65G40D0 70-200kHz O-247AD PDF

    400v 20A ultra fast recovery diode

    Abstract: APT38F80B2 APT38F80L MIC4452
    Text: APT38F80B2 APT38F80L 800V, 38A, 0.28Ω Max, trr ≤300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


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    APT38F80B2 APT38F80L 300ns O-247 400v 20A ultra fast recovery diode APT38F80B2 APT38F80L MIC4452 PDF

    APT38F80B2

    Abstract: APT38F80L MIC4452
    Text: APT38F80B2 APT38F80L 800V, 41A, 0.24Ω Max, trr ≤300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


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    APT38F80B2 APT38F80L 300ns O-264 APT38F80 O-247 APT38F80B2 APT38F80L MIC4452 PDF

    APT38F80B2

    Abstract: APT38F80L MIC4452
    Text: APT38F80B2 APT38F80L 800V, 38A, 0.28Ω Max, trr ≤300ns N-Channel FREDFET T-Max Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


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    APT38F80B2 APT38F80L 300ns O-247 APT38F80B2 APT38F80L MIC4452 PDF

    IC 7403

    Abstract: igbt 400V 40A 40gp60b2
    Text: APT40GP60B 600V Mos 7™ Ultra Fast IGBT The Mos 7 Ultra Fast IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


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    APT40GP60B O-247 IC 7403 igbt 400V 40A 40gp60b2 PDF

    IC 7410

    Abstract: 10A IGBT driver IC igbt 400V 40A
    Text: APT40GP60J 600V Mos 7™ Ultra Fast IGBT E E The Mos 7 Ultra Fast IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


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    APT40GP60J IC 7410 10A IGBT driver IC igbt 400V 40A PDF

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    Abstract: No abstract text available
    Text: APT40GP60J 600V Mos 7™ Ultra Fast IGBT E E The Mos 7 Ultra Fast IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


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    APT40GP60J PDF

    CTG-22S

    Abstract: CTG-34S CTG-32S CTG-33S CTG23S smew CTG-11S CTG-12R CTG-12S CTG-14R
    Text: SANKEN ELECTRIC C« LTH iS 3SE B Ultra Fast Recovery Diodes _ 7 ^ _ S A K J T~Zt~07 7 ^ 0 7 4 1 GODGfll? b V r m:70~ 400V e i o : 5.0~ 20A BESSES CTG V rm V CTG-12S CTG-12R CTG-14S CTG-14R CTG-21S CTG-21R CTG-22S CTG-22R CTG-23S CTG-23R CTG-24S CTG-24R CTG-31S


    OCR Scan
    tj-140 CTG-11S CTG-11 CTG-12S CTG-12R CTG-14S CTG-14R CTG-21S MI-10/15 SFPB-64 CTG-22S CTG-34S CTG-32S CTG-33S CTG23S smew PDF

    400v 20A ultra fast recovery diode

    Abstract: 400v 50A DIODE BYV54V50 BYV72E100/150/200 power Diode 200V 10A BYV72E-100 DIODE SMD 10A sod 81 50V 200A ultra fast diode 600v 2A ultra fast recovery diode
    Text: Power Devices Ultra Fast Recovery Epitaxial Rectifiers in o rd e r o f cu rre n t rating (cont.) Package Outline Average Forward Current Repetitive Peak Reverse Voltage NonRepetitive Reverse Avalanche Energy Surge (NonRepetitive) Forward Current ’ f |A V | m ax.(1)


    OCR Scan
    BYV72E-100 BYV44-300* BYV74-300* BYT230PIV-200< BYV54V-50* OT-93 O-220AB BYD31D BYD43-20 BYV98 400v 20A ultra fast recovery diode 400v 50A DIODE BYV54V50 BYV72E100/150/200 power Diode 200V 10A DIODE SMD 10A sod 81 50V 200A ultra fast diode 600v 2A ultra fast recovery diode PDF

    10C2

    Abstract: ULTRA FAST diode 400v 5a vrrm 400v if 20A ultra fast recovery diode 5GUZ47 markT2
    Text: TOSHIBA 5GUZ47 TOSHIBA SUPER FAST RECOVERY DIODE SILICON EPITAXIAL TYPE 5GUZ47 Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 43.2 ± 0.2 10.3MAX. • Repetitive Peak Reverse Voltage V = 400V • Average Output Rectified Current I0 = 5A


    OCR Scan
    5GUZ47 100ns 961001EAA2' 10C2 ULTRA FAST diode 400v 5a vrrm 400v if 20A ultra fast recovery diode 5GUZ47 markT2 PDF

    L38C

    Abstract: MES1104 MES1106 MES1105 Fast Recovery Rectifier, 300V
    Text: MES1104 MES1105 MES1106 Microsemi Corp. The diode experts S A N T A A N A , CA Ultra Fast Switching Rectifier For more information call: 714 979-8220 FEATURES • M ICROM INIATU RE PACKAGE • VOIDLESS HERMETICALLY SEALED G LA SS PACKAGE • TRIPLE LAYER PASSIVATION


    OCR Scan
    MES1104 MES1105 MES1106 MES1101 MES1103 L38C Fast Recovery Rectifier, 300V PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 5GUZ47 TOSHIBA SUPER FAST RECOVERY DIODE SILICON EPITAXIAL TYPE s r ; I J 7 A 7m wmr SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • § • • Repetitive Peak Reverse Voltage : Vr r m = 400V Average Output Rsctiiisd Currsnt ’ I q —5A


    OCR Scan
    5GUZ47 100ns 961001EAA2' PDF