Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET 1 1 1 TO-220F1 TO-220F2 FEATURES * 10A, 400V, R DS ON (0.55Ω) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching Speeds
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UF740
O-220F1
O-220F2
O-220F
O-220
O-263
QW-R502-078.
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Untitled
Abstract: No abstract text available
Text: PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760 HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number IRF330 BVDSS 400V RDS(on) 1.00Ω ID 5.5A The HEXFETtechnology is the key to International
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90335F
IRF330
JANTX2N6760
JANTXV2N6760
O-204AA/AE)
MIL-PRF-19500/542]
p252-7105
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Untitled
Abstract: No abstract text available
Text: PD - 90432C IRFF330 JANTX2N6800 JANTXV2N6800 REF:MIL-PRF-19500/557 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF330 BVDSS 400V RDS(on) 1.0Ω ID 3.0A The HEXFET technology is the key to International
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90432C
IRFF330
JANTX2N6800
JANTXV2N6800
MIL-PRF-19500/557
O-205AF)
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IRF350
Abstract: IRF 543 MOSFET JANTX2N6768 JANTXV2N6768 IRF3501 irf350 international rectifier
Text: PD - 90339F IRF350 JANTX2N6768 JANTXV2N6768 [REF:MIL-PRF-19500/543] 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF350 BVDSS 400V RDS(on) 0.300Ω ID 14A The HEXFETtechnology is the key to International
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90339F
IRF350
JANTX2N6768
JANTXV2N6768
MIL-PRF-19500/543]
O-204AA/AE)
parallelin52-7105
IRF350
IRF 543 MOSFET
JANTX2N6768
JANTXV2N6768
IRF3501
irf350 international rectifier
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IRFF320
Abstract: JANTX2N6792 JANTXV2N6792
Text: PD -90428C IRFF320 JANTX2N6792 JANTXV2N6792 REF:MIL-PRF-19500/555 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF320 BVDSS 400V RDS(on) 1.8Ω ID 2.0A The HEXFET technology is the key to International
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-90428C
IRFF320
JANTX2N6792
JANTXV2N6792
MIL-PRF-19500/555
O-205AF)
T252-7105
IRFF320
JANTX2N6792
JANTXV2N6792
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IRF330
Abstract: JANTX2N6760 JANTXV2N6760
Text: PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760 HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number IRF330 BVDSS 400V RDS(on) 1.00Ω ID 5.5A The HEXFETtechnology is the key to International
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90335F
IRF330
JANTX2N6760
JANTXV2N6760
O-204AA/AE)
MIL-PRF-19500/542]
an52-7105
IRF330
JANTX2N6760
JANTXV2N6760
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Untitled
Abstract: No abstract text available
Text: KSM6N40C/KSMF6N40C 400V N-Channel MOSFET TO-220 TO-220F Features • • • • • • 6A, 400V, RDS on = 1.0 Ω @VGS = 10 V Low gate charge ( typical 16nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description
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KSM6N40C/KSMF6N40C
O-220
O-220F
54TYP
00x45Â
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Untitled
Abstract: No abstract text available
Text: PD - 90339F IRF350 JANTX2N6768 JANTXV2N6768 [REF:MIL-PRF-19500/543] 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF350 BVDSS 400V RDS(on) 0.300Ω ID 14A The HEXFETtechnology is the key to International
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90339F
IRF350
JANTX2N6768
JANTXV2N6768
MIL-PRF-19500/543]
O-204AA/AE)
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LD 33 regulator
Abstract: JANTXV2N6800 IRFF330 JANTX2N6800
Text: PD - 90432C IRFF330 JANTX2N6800 JANTXV2N6800 REF:MIL-PRF-19500/557 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF330 BVDSS 400V RDS(on) 1.0Ω ID 3.0A The HEXFET technology is the key to International
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90432C
IRFF330
JANTX2N6800
JANTXV2N6800
MIL-PRF-19500/557
O-205AF)
LD 33 regulator
JANTXV2N6800
IRFF330
JANTX2N6800
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Untitled
Abstract: No abstract text available
Text: PD - 90425C IRFF310 JANTX2N6786 JANTXV2N6786 REF:MIL-PRF-19500/556 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF310 BVDSS 400V RDS(on) 3.6Ω ID 1.25A The HEXFET technology is the key to International
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90425C
IRFF310
JANTX2N6786
JANTXV2N6786
MIL-PRF-19500/556
O-205AF)
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IRFD310
Abstract: TB334
Text: IRFD310 Data Sheet January 2002 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features • 0.4A, 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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IRFD310
IRFD310
TB334
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IRFF310
Abstract: JANTX2N6786 JANTXV2N6786
Text: PD - 90425C IRFF310 JANTX2N6786 JANTXV2N6786 REF:MIL-PRF-19500/556 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF310 BVDSS 400V RDS(on) 3.6Ω ID 1.25A The HEXFET technology is the key to International
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90425C
IRFF310
JANTX2N6786
JANTXV2N6786
MIL-PRF-19500/556
O-205AF)
IRFF310
JANTX2N6786
JANTXV2N6786
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Untitled
Abstract: No abstract text available
Text: KSMD2P40 / KSMU2P40 400V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -1.56A, -400V, RDS on = 6.5Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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KSMD2P40
KSMU2P40
O-252
O-251
-400V,
30TYP
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Untitled
Abstract: No abstract text available
Text: KSMD4P40 / KSMU4P40 400V P-Channel MOSFET TO-252 Features • • • • • • TO-251 -2.7A, -400V, RDS on = 3.1Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description
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KSMD4P40
KSMU4P40
O-252
O-251
-400V,
30TYP
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IRF360
Abstract: No abstract text available
Text: PD - 90518 IRF360 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF360 400V 0.20Ω ID 25A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRF360
O-204AA/AE)
IRF360
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Untitled
Abstract: No abstract text available
Text: PD -90428D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF320 JANTX2N6792 JANTXV2N6792 REF:MIL-PRF-19500/555 400V, N-CHANNEL Product Summary Part Number IRFF320 BVDSS RDS(on) 400V 1.8Ω ID 2.0A ® The HEXFET technology is the key to International Rectifier’s
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-90428D
O-205AF)
IRFF320
JANTX2N6792
JANTXV2N6792
MIL-PRF-19500/555
O-205AF
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IRFF320
Abstract: TA17404 TB334
Text: IRFF320 Data Sheet January 2002 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 2.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF320
TA17404.
IRFF320
TA17404
TB334
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IRFP350
Abstract: TB334
Text: IRFP350 Data Sheet January 2002 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP350
TA17434.
IRFP350
TB334
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IRFP350
Abstract: TB334
Text: IRFP350 Data Sheet July 1999 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP350 PACKAGE TO-247 2319.4 Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRFP350
O-247
IRFP350
TB334
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IRFF330
Abstract: TA17414 TB334
Text: IRFF330 Data Sheet January 2002 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features • 3.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF330
TA17414.
IRFF330
TA17414
TB334
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IRFD310
Abstract: TB334 400V to 6V DC Regulator TO 220 Package
Text: IRFD310 Data Sheet July 1999 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET 2324.4 Features • 0.4A, 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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IRFD310
IRFD310
TB334
400V to 6V DC Regulator TO 220 Package
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IRF 534
Abstract: IRFF320 JANTX2N6792 JANTXV2N6792
Text: PD -90428D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF320 JANTX2N6792 JANTXV2N6792 REF:MIL-PRF-19500/555 400V, N-CHANNEL Product Summary Part Number IRFF320 BVDSS RDS(on) 400V 1.8Ω ID 2.0A ® The HEXFET technology is the key to International Rectifier’s
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-90428D
O-205AF)
IRFF320
JANTX2N6792
JANTXV2N6792
MIL-PRF-19500/555
O-205AF
IRF 534
IRFF320
JANTX2N6792
JANTXV2N6792
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IRF360
Abstract: IRF3601 mosfet irf360
Text: PD - 90518 IRF360 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF360 400V 0.20Ω ID 25A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRF360
O-204AA/AE)
IRF360
IRF3601
mosfet irf360
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IRF3401
Abstract: IRF340
Text: PD - 90371 IRF340 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF340 BVDSS RDS(on) 400V 0.55Ω ID 10A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRF340
O-204AA/AE)
IRF3401
IRF340
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