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    Abstract: No abstract text available
    Text: 7 =3E T E 37 G D M b BI S TTb • S G T H SCS-THOMSON RÆ 0Mq [I[UOT 2)«S STP4N40 STP4N40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP4N40 STP4N40FI ■ . ■ ■ ■ V dss Ros(on) Id 400 V 400 V < 2.1 Ü < 2.1 Î2 4 A 3 A TYPICAL R d s (oi-i) = 1.65 Q


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    PDF STP4N40 STP4N40FI 400VDS 400VOS STP4N40/FI

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    Abstract: No abstract text available
    Text: £ jï SGS-THOMSON S T K 4 N 30 ULKgraMOeS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TK4N 30 V dss 300 V R D S o n Id < 1 .4 Q. 4.2 A . TYPICAL RDS(on) = 1.2 £2 . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


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