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    40250 TRANSISTOR Search Results

    40250 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    40250 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    40250

    Abstract: small signal transistors
    Text: 40250 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type 40250 Tj 200 hFE max 100 hfe Notes VCBO 50 hFE A 1.5m fT 1.0 Polarity NPN VCEO


    Original     		PDF O-213AA/TO-66 07-Sep-2010 40250 small signal transistors

    2n3054

    Abstract: 40250 Transistor 40250 40372 2N6261
    Text: ^£.mi-C.ondu.ctoi Lpioduati, One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 UsA 2N3054, 2N6260, 2N6261, 40250, 40572, 40910, 40911 Hometaxial-Base Medium- Power Silicon N-P-N Transistors Rugged Devices for Intermediate-Power Applications in


    Original     		PDF 2N3054, 2N6260, 2N6261, 2N3064, 2N6261) 2N3054) 2N6260 2N3054 2N6261 2n3054 40250 Transistor 40250 40372 2N6261

    RCA413

    Abstract: RCA1A16 RCA1A10 RCA1B05 BFT19B BFT28 2N6079 rca1e03 2N5415
    Text: Power Transistors High-Voltage n-p-n and p-n-p Type Selection Charts cont'd h v C E O (sus) V CEX V V (sat)-V 'CEX-mA F E CE (sus> »C V V CE Temp.-°C A 25 A V C E V 'c 'B A A ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ 5240 FAMILY (n-p-n) Multiple E


    Original     		PDF O-204M 2N5840 BUX16C RCA413 RCA1B04 RCA1B05 2N5415 2N3439 2N3585 BUX66 RCA1A16 RCA1A10 RCA1B05 BFT19B BFT28 2N6079 rca1e03

    2N5320

    Abstract: 2N5321 2N5322 2N5323 2N5323, PNP TO-39
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR SWITCHING TRANSISTORS 2N5320, 2N5321 NPN 2N5322, 2N5323 (PNP) TO-39 Metal Can Package Medium Power Amplifier and Switching Applications.


    Original     		PDF 2N5320, 2N5321 2N5322, 2N5323 2N5320 2N5321 2N5322 C-120 2N5323 2N5323, PNP TO-39

    THINKI transistor catalog

    Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
    Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003


    Original     		PDF 2SA914 O-126 2SA900 2SC2556 2SC2556A LM317K O-220 LM317T THINKI transistor catalog audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747

    BC639

    Abstract: BC637 bc639 equivalent BC639-10 40250 Transistor TRANSISTOR BC639 bc637 transistor BC637-16 BC639 datasheet bc639-16 datasheet
    Text: BC635 / BC637 / BC639 NPN Type Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURE High current transistor 3.5±0.2 14.3±0.2 4.5±0.2 4.55±0.2 0.43+0.08 –0.07 0.46+0.1


    Original     		PDF BC635 BC637 BC639 BC637 BC635 50MHz BC639 bc639 equivalent BC639-10 40250 Transistor TRANSISTOR BC639 bc637 transistor BC637-16 BC639 datasheet bc639-16 datasheet

    rca1a10

    Abstract: 2N3439 complementary BFT28B RCS88 2N5415
    Text: Power Transistors High-Voltage n-p-n and p-n-p Type Selection Charts cont'd h v C E O (sus) V CEX V V (sat)-V 'CEX-mA F E CE (sus> »C V V CE Temp.-°C A 25 A V C E V 'c 'B A A ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ 5240 FAMILY (n-p-n) Multiple E


    Original     		PDF O-204M 2N5840 BUX16C RCA413 RCA1B04 RCA1B05 2N5415 2N3439 rca1a10 2N3439 complementary BFT28B RCS88

    RCA1E02

    Abstract: RCA1A15 RCA1A11 rca1a09 40327 205MD 2N406 RCA 40313 40318 RCA rca+40412
    Text: Power Transistor High-Voltage n-p-n and p-n-p Type Selection Charts H V CEQ sus V CEX V V ( s a t ) - •V 'CEX-mA FE CE (sus) V V A 9 FAMILY (n-p-n) High Voltage, Com 5 M H z m i n ; P = 10Wma: CE Temp.—°C V 25 V CB »C •B V A A mm T mmmm 40346 2N3440«


    Original     		PDF 10Wma: 2N3440« 2N406440390" 2N3439* 2N406340385AUDIO RCA1A15 RCA1A09 RCA1A11 RCA1E02 40327 205MD 2N406 RCA 40313 40318 RCA rca+40412

    tpl 280-4

    Abstract: ULS2800 ULS2000 ULS2003 ULS2002 IC 2804 ls2000 ULS2022 8DARLINGTON ULS-2004
    Text: INTEGRA TED POUER 02 4825898 im w m D Ë | 40250^0 □□□□2bS □ I N TE G R A T E D POWER R M 82D 0 0 2 6 5 D Darlington Transistor Arrays T E D SEMICONDUCTORS, LTD. Features Description 7 or 8 darlington power drives In single package , 50V or 95V breakdown voltage


    OCR Scan     		PDF MA01845 tpl 280-4 ULS2800 ULS2000 ULS2003 ULS2002 IC 2804 ls2000 ULS2022 8DARLINGTON ULS-2004

    LM317 power supply 0.30 V. 20 amp

    Abstract: LM217hvK P217A LM217HV LM317T LM217K IP117A 117HV INTEGRATED POWER SEMICONDUCTORS LTD LM317 pin information
    Text: INTEGRATED POWER b? dF J 40250=10 00GQ2Ô4 3 ! i 4825898 _ INTEG R A TED POWER 8 2 0 J 0 2 4. i IN T E G R A T E D $ '2 -3 1.5 Am p Positive Adjustable Regulators R SEMICONDUCTORS , LTD. Features Description Guaranteed 1% output voltage tolerance Guaranteed 0.3% load regulation


    OCR Scan     		PDF IP117A LM317 power supply 0.30 V. 20 amp LM217hvK P217A LM217HV LM317T LM217K 117HV INTEGRATED POWER SEMICONDUCTORS LTD LM317 pin information

    bc461

    Abstract: BCY39A BCY87 T071 BC461-6 BCY89 BCY70 BS BCY34A BCY56 BC477
    Text: 4ÖE D • 0133107 0DGQ447 RG4 ■ SMLB SEM ELABE SEHELAB L T J> T -Z >.a I BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code BC461-6 BC477 BC477A BC477B BC478 BC478A BC478B BC479 BCW34 BCW35 BCY30A BCY31A BCY32A DCY33A BCY34A BCY39A BCY40A BCY42


    OCR Scan     		PDF 0DGQ447 BC461-6 BC477 BC477A BC477B BC478 BC478A BC478B BC479 BCW34 bc461 BCY39A BCY87 T071 BCY89 BCY70 BS BCY34A BCY56

    PC557

    Abstract: bc5588 bc557 siemens bc548 sot23 BC182 BC547 BC648 BC557 SOT23 BC212
    Text: Transistors For complete package outlines, refer to pages PO-1 through PO-6 General Purpose and Switching C h a ra c te ris tic s T. =25°C M a x im u m R a tin g s VCEO ' c N=NPN Pt fr ^CEX VCBO VCEX mW MHz nA V 200 200 200 ( ' 206" 170 i 70 170; 170 250


    OCR Scan     		PDF BC807 BC807W BC808 BC817 BC817W BC818W BC846 BC846W BC847 BC847W PC557 bc5588 bc557 siemens bc548 sot23 BC182 BC547 BC648 BC557 SOT23 BC212

    Untitled

    Abstract: No abstract text available
    Text: SMALLSIGNAL_ _ TRANSISTORS GENERAL RURROSE •SASES :_ T O - T O - 39 hpg 9 NF Ptfit vCBO 1 VCEO : ^ : vCEsat fT cob CASE ® I a= vces " ! ‘ ’ kfe *C *c =25°C min. ! min. ! ! min.-max


    OCR Scan     		PDF T0-18a O-18a O-16a Tcl25Â T-l60Â

    300W TRANSISTOR AUDIO AMPLIFIER

    Abstract: 70w amplifier 40250 Transistor 40594 40629 Transistor 40538 ic 40538 120w audio power amplifier circuit npn 40872 TA8323
    Text: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6 .5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386


    OCR Scan     		PDF 2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) 300W TRANSISTOR AUDIO AMPLIFIER 70w amplifier 40250 Transistor 40594 40629 Transistor 40538 ic 40538 120w audio power amplifier circuit npn 40872 TA8323

    ca3096

    Abstract: 40250 Transistor thyristor firing circuits 3096a Transistor Arrays NPN General Purpose Transistor CA3096AE 15 A PNP TRANSISTOR
    Text: CA3096, CA3096A, CA3096C fS î h a r r i s o u SemicoHou »VOR NPN/PNP Transistor Arrays August 1996 Applications Description • Five-independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    OCR Scan     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C ca3096 40250 Transistor thyristor firing circuits 3096a Transistor Arrays NPN General Purpose Transistor CA3096AE 15 A PNP TRANSISTOR

    AD149

    Abstract: ASZ18 ASZ15 ASZ1015 ASZ16 ADY26 AD148 ASZ1018 AD133 ASZ17
    Text: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at R. j-case °C !W max Outlines 0.35 0.35 0.35 0.35 0.35 0.35 1.5 1.5 1.5 1.5 1.5 1.5 127 127 127 127 127 127 A D 130— 111 — IV —V A D 131— III — IV — V 1 1 5 5 5 0.35 0.35 0.3 0.3


    OCR Scan     		PDF AD130 AD130â AD131 AD131â AD132 AD132â AD133 AD133â NS257 T0-18 AD149 ASZ18 ASZ15 ASZ1015 ASZ16 ADY26 AD148 ASZ1018 AD133 ASZ17

    2n5253

    Abstract: 2N5596 2N5321 2N5357 2N5498 lta 301 2N5152S 2N5153 2N5153S 2N5154
    Text: 4ÖE » • 0133107 □□□ □ M3e! Ö3Ö ■ S M L B SEMELABESEHELAB LTD T g r - of BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2N5253 2N5301 2N5302 2N5303 2N5320 2N5321


    OCR Scan     		PDF OGOG43e! 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2n5253 2N5596 2N5321 2N5357 2N5498 lta 301

    AD143

    Abstract: ad148 ASZ1015 Germanium Power Devices
    Text: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at Type Number ^ 1*0 V ^ CEO y Y ebo y max 32 32 32 - 64 64 64 80 80 50 50 50 32 40 40 40 55 22 22 22 55 80 40 32 32 50 50 50 35 26 26 30 30 32 32 100 100 100 A D Y 10 ADY11 A D Y 12 AD Y13 A D Y 20


    OCR Scan     		PDF ADY11 ADY27 NS257 AD143 ad148 ASZ1015 Germanium Power Devices

    BD NPN transistors 177

    Abstract: B0186 BD139 BDY47 s3 npn BD 440 NPN transistors aot 128 B0165 B0180 BDY42
    Text: Power transistors Type Structure Fig. Nr. Characteristics Maximum ratings A o t at 'case = + 2 5 °c W A V /T MHz 7C mA UC EO Af e at / q and ^CE A V ^CEsat at V I q and *FE A BD 127 NPN 23 17.5' 0.5 250 - - 50 1 15 - - BD128 NPN 23 17.5’) 0.5 300 1 15


    OCR Scan     		PDF BDY42 BDY43 BDY44 BDY45 BDY46 BDY47 BD NPN transistors 177 B0186 BD139 s3 npn BD 440 NPN transistors aot 128 B0165 B0180

    2SA1690

    Abstract: BCX53 Rohm RXT-A28 2SD2170 2SB1132 2SB1181 2SB1182 2SB1184 2SB1188 2SB1189
    Text: R OH M ESE D CORP Tr • ?Ö 2Ö^ GOGEÒ^ fl ■ T - A l ’ Ol Transistors- • MPT SOT-89 , OPT (DPAK) Types Ty 3 6 MPT 2SB1132 — — Driver — 2SD1760 2SD17S8 — 2S01733 2SD1918 2SD2126 2SD2167 2SB1424 2SD2150 2SB1308 2SB1386 2SD1963 2SD2Q98 2SB1427


    OCR Scan     		PDF OT-89) 25iCi 2SB1132 2SB1184 2SB1188 2SB1182 2SB1189 2SB1260 2SB1181 2SB1275 2SA1690 BCX53 Rohm RXT-A28 2SD2170 2SB1132 2SB1181 2SB1182 2SB1184 2SB1189

    2N929

    Abstract: 2N930 BCW60 BCW61 BCX70 BCX71 BCY58 BCY59 BCY72 BFX65
    Text: AF transistors Continued Nr. Maximum ratings ^tot at 'amb = + 4 5°c 7C W mA 1.06) 1000 1.06) 1000 1000 1.06) 1.06) 1000 1.06) 1000 1.06) 1000 0.15 200 200 0.15 0.15 200 200 0.15 0.15 200 200 0.15 0.15 200 0.15 200 200 0.15 0.15 200 200 0.15 200 0.15 200


    OCR Scan     		PDF BCW60 BCW61 2N930 2N1711 2N929 2N930 BCX70 BCX71 BCY58 BCY59 BCY72 BFX65

    2N6178

    Abstract: 2N2016 2n3283 Transistor 2n6099 2N6180 RCA 40250 2N6474 JAN 2n5578 2N6177 2N2102
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053


    OCR Scan     		PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 2N6178 2N2016 2n3283 Transistor 2n6099 2N6180 RCA 40250 2N6474 JAN 2n5578 2N6177 2N2102

    iskra

    Abstract: BC107 to92 BD NPN transistors 177 BD139 BC107A BC393 BC107 BC177 BC237 BC308
    Text: ISKRA ELECTRONICS INC SSE D • 4flfl3M77 0000113 7 ■ ■ 7"- 3 /- / 7 r^ 3 f-r? Silicijevi transistor^ malih moci Silicon low power transistors BC107 : VcBO UCEO UEBO : JV V) (V) 50 45 5 A B NPN B0177 A B PNP 50 - - BC237 A B NPN 45 BC238 A B C NPN ;‘-L.


    OCR Scan     		PDF T-31-11 BC107 BC177 BC237 BC238 BC308 BC337 BC338 BC393 iskra BC107 to92 BD NPN transistors 177 BD139 BC107A BC393

    ca3096

    Abstract: CA3096AE 639 TRANSISTOR PNP CA3096E
    Text: ui H A R R CA3096 I S S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • F ive-Independent Transistors The CA3096C, CA3Û96, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    OCR Scan     		PDF CA3096 CA3096C, CA3096A CA3096A, CA3096, CA3096C CA3096. ca3096 CA3096AE 639 TRANSISTOR PNP CA3096E