403AA Search Results

ut 803A

Abstract: N2023 N2028 1403A CR51-203A 103A 703a 803A 2N2026 UNF-2A
Contextual Info: It AV 85°C 55 A Itsm 760 I21: A O u tlin e 3200 Type No. dv/dt = 20V/p! dv/dt= 200V/p S CR51-103A CR51-103AA CR51-203A CR51-203AA CR51-303A CR51-303AA CR51-403A CR51-403AA CR51-503A CR51-503AA CR51-603A CR51-603AA CR51-703A CR51-703AA CR51 -803A CR51-803AA

Contextual Info: MBRAF360T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRAF3200, NRVBAF3200 Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

NS6A5.0AT3G

Contextual Info: NS6A5.0AFT3G, SZNS6A5.0AFT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com Unidirectional The NS6AxxAFT3G series is designed to protect voltage sensitive components from high voltage, high energy transients. This device has excellent clamping capability, high surge capability, low zener

ut 803A

Abstract: b 803a 803A cr31-803a CR27-1203RCA CR31-1103AA CR2810 CR51-303A 2n20 CR51-403A
Contextual Info: MEDIUM POWER THYRISTORS — 32 to 70A h- AV B6'C . >TSM |2 t 32 A 500 A 1250 A2sec Outline 2 Type No. d v /d t = 2 0 V /|jS d v /d t= 2 0 0 V /p S V RRM CR27-903RC CR27 -1003RC CR27-1103RC CR27 1203RC CR27 -1303RC CR27-1403RC CR27 1503RC 800 900 1000 1100

RXSP 14

Abstract: RXSP RXSP1 RXME 1 RXSP143 RXKH-2 402-AB RXSP14 RXMa 2 RXKH
Contextual Info: ASEA Info-N o. INFORMATION RFR 1143 E, Ed. 1 From /Date Reg. RFR, Jan. 1972 5634 Page 1 R elay Division Handreset indicators type RXSP 1 OUTSTANDING FEATURES • Compact indicators for protective relays, signalling equipment, etc. • Manual resetting knob

Contextual Info: MBRAF1540T3G, NRVBAF1540T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRAF360T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRAF3200T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRAF360T3G, NRVBAF360T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

MBRAF260T3G

Contextual Info: MBRAF260T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

NSA5.0AT3G

Contextual Info: NSA5.0AFT3G 400 Watt Peak Power Zener Transient Voltage Suppressor Unidirectional http://onsemi.com The NSA5.0AFT3G is designed to protect voltage sensitive components from high voltage, high energy transients. It has excellent clamping capability, high surge capability, low zener

Contextual Info: MBRAF440T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

NSA5.0AT3G

Contextual Info: NSA5.0AFT3G 400 Watt Peak Power Zener Transient Voltage Suppressor Unidirectional http://onsemi.com The NSA5.0AFT3G is designed to protect voltage sensitive components from high voltage, high energy transients. It has excellent clamping capability, high surge capability, low zener

mcb tripping curves

Abstract: MINIATURE CIRCUIT BREAKER siemens mcb tripping curves siemens 3RF21 led lamp 230v circuit diagram MINIATURE CIRCUIT BREAKER siemens 5sx2 3RF2920-0FA08 mcb 5sx2 siemens relay sirius 3RF2950-0GA16
Contextual Info: Controls — Solid-State Switching Devices Introduction • Overview 3RF21 3RF20 3RF23 3RF29 Order No. Page 3RF21, 3RF20 4/7 4/10 3RF23 4/11 SIRIUS SC solid-state switching devices Solid-state relays 22.5 mm solid-state relays, 45 mm solid-state relays • Widths of 22.5 mm and 45 mm

Contextual Info: MBRAF260T3G, NRVBAF260T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

NS6A5.0AT3G

Contextual Info: NS6A5.0AFT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional http://onsemi.com The NS6AxxAFT3G series is designed to protect voltage sensitive components from high voltage, high energy transients. This device has excellent clamping capability, high surge capability, low zener

150C1K

Abstract: SMA-FL
Contextual Info: MBRAF1100T3G Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

NS6A5.0AT3G

Contextual Info: NS6A5.0AFT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional http://onsemi.com The NS6AxxAFT3G series is designed to protect voltage sensitive components from high voltage, high energy transients. This device has excellent clamping capability, high surge capability, low zener

Contextual Info: MBRAF1540T3G, NRVBAF1540T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRAF1540T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRAF2H100T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

MARKING 6AA

Abstract: NS6A5.0AT3G
Contextual Info: NS6A5.0AFT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional http://onsemi.com The NS6AxxAFT3G series is designed to protect voltage sensitive components from high voltage, high energy transients. This device has excellent clamping capability, high surge capability, low zener