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40N120 Price and Stock

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onsemi NVBG040N120SC1 TRANS SJT N-CH 1200V 60A D2PAK-7
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NVBG040N120SC1	Digi-Reel	2,664		1	1 $24.47 10 $18.421 100 $24.47 1000 $24.47 10000 $24.47	Buy Now
	NVBG040N120SC1	Cut Tape	2,664		1	1 $24.47 10 $18.421 100 $24.47 1000 $24.47 10000 $24.47	Buy Now
	NVBG040N120SC1	Reel	2,400		800	1 - 10 - 100 - 1000 $16.87481 10000 $16.87481	Buy Now
Avnet Americas	NVBG040N120SC1	Reel		18 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Richardson RFPD	NVBG040N120SC1				800	1 - 10 - 100 - 1000 $15.64 10000 $15.64	Buy Now
Avnet Asia	NVBG040N120SC1			18 Weeks	800	1 - 10 - 100 - 1000 $16.46053 10000 $15.44444	Buy Now
Avnet Silica	NVBG040N120SC1			19 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Win Source Electronics	NVBG040N120SC1		1,354			1 - 10 $24.9115 100 $22.9952 1000 $22.9952 10000 $22.9952	Buy Now
Wuhan P&S	NVBG040N120SC1		596		1	1 $43.61 10 $43.61 100 $27.84 1000 $21.11 10000 $21.11	Buy Now
Micro Commercial Components MIW40N120FLA-BP IGBT 1200V 40A,TO-247AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MIW40N120FLA-BP	Tube	1,656		1	1 $11.6 10 $8.05 100 $11.6 1000 $5.58876 10000 $5.58876	Buy Now
Infineon Technologies AG IKW40N120T2FKSA1 IGBT 1200V 75A 480W TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IKW40N120T2FKSA1	Tube	744		1	1 $9.83 10 $9.83 100 $5.807 1000 $4.49875 10000 $4.49875	Buy Now
Rochester Electronics	IKW40N120T2FKSA1		64		1	1 $5 10 $5 100 $4.7 1000 $4.25 10000 $4.25	Buy Now
TME	IKW40N120T2FKSA1		15		1	1 $8.15 10 $6.59 100 $6.14 1000 $5.5 10000 $5.5	Buy Now
Chip1Stop	IKW40N120T2FKSA1	Tube	2,721			1 $9.04 10 $7.12 100 $5.29 1000 $4.02 10000 $3.78	Buy Now
EBV Elektronik	IKW40N120T2FKSA1			20 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Win Source Electronics	IKW40N120T2FKSA1		39,562			1 - 10 $5.087 100 $3.392 1000 $3.392 10000 $3.392	Buy Now
IXYS Corporation IXYH40N120B3D1 IGBT 1200V 86A 480W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXYH40N120B3D1	Tube	614		1	1 $11.88 10 $11.88 100 $7.58733 1000 $11.88 10000 $11.88	Buy Now
TTI	IXYH40N120B3D1	Tube	300		30	1 - 10 - 100 $9.34 1000 $9.34 10000 $9.34	Buy Now
onsemi NTBG040N120M3S SILICON CARBIDE (SIC) MOSFET - E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTBG040N120M3S	Digi-Reel	452		1	1 $9.13 10 $6.545 100 $9.13 1000 $9.13 10000 $9.13	Buy Now
	NTBG040N120M3S	Cut Tape	452		1	1 $9.13 10 $6.545 100 $9.13 1000 $9.13 10000 $9.13	Buy Now
Avnet Americas	NTBG040N120M3S	Bulk		22 Weeks, 3 Days	1	1 $10.38 10 $7.61 100 $5.68 1000 $5.68 10000 $5.68	Buy Now
	NTBG040N120M3S	Reel		17 Weeks	800	1 - 10 - 100 - 1000 $4.41213 10000 $4.41213	Buy Now
Mouser Electronics	NTBG040N120M3S		231			1 $9.98 10 $7.32 100 $5.46 1000 $4.92 10000 $4.92	Buy Now
Newark	NTBG040N120M3S	Cut Tape	160		1	1 $9.72 10 $7.61 100 $5.68 1000 $5.68 10000 $5.68	Buy Now
Richardson RFPD	NTBG040N120M3S		800		800	1 - 10 - 100 - 1000 $7.73 10000 $7.73	Buy Now

Avnet Asia	NTBG040N120M3S		160	17 Weeks	800	1 - 10 - 100 - 1000 $1.85571 10000 $1.85385	Buy Now
Avnet Silica	NTBG040N120M3S			18 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NTBG040N120M3S		2,400	19 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	NTBG040N120M3S		1,600		1	1 - 10 - 100 - 1000 $9.97 10000 $9.23	Buy Now
Wuhan P&S	NTBG040N120M3S		5,200		1	1 $13.74 10 $13.74 100 $8.77 1000 $6.65 10000 $6.65	Buy Now

Find more 40N120 price and stock on Findchips.com

40N120 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
40N120 Abstract: IXRH 50N120 40N120 DATASHEET 50N120 bi-directional switches IGBT induction heating D-68623 Text: IXRH 40N120 Advanced Technical Information VCES = 1200 V IC25 = 55 A VCE sat = 2.2 V IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings	Original	PDF	40N120 O-247 40N120 IXRH 50N120 40N120 DATASHEET 50N120 bi-directional switches IGBT induction heating D-68623
IXGX40N120BD1 Abstract: max3037 2040q Text: Advanced Technical Information High Voltage IGBT with Diode IXGX 40N120BD1 VCES IC25 VCE sat = 1200 = 75 = 3.3 = 250 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous	Original	PDF	40N120BD1 IC110 IF110 PLUS247 405B2 IXGX40N120BD1 max3037 2040q
BSC 27 flyback Abstract: induction heating circuits IXEH40N120B2D4 igbt for induction heating igbt for induction heating ic Text: IXEH 40N120B2D4 Advanced Technical Information IC25 = 65 A = 1200 V VCES VCE sat typ = 2.4 V SPT IGBT High Frequency Applications: • induction heating • flyback converters • resonant-mode power supplies C TO-247 AD G E G C E C (TAB) Features IGBT Conditions	Original	PDF	40N120B2D4 O-247 BSC 27 flyback induction heating circuits IXEH40N120B2D4 igbt for induction heating igbt for induction heating ic
40N120A Abstract: IXGT 40N120A2 a 3150 40n120 40N120A2 Text: IXGH 40N120A2 IXGT 40N120A2 High Voltage IGBT Low VCE sat IXGH 40N120A2 IXGT 40N120A2 VCES = 1200 V IC25 = 75 A VCE(sat) ≤ 2.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCES TJ = 25°C to 150°C 1200	Original	PDF	40N120A2 IC110 O-247 40N120A IXGT 40N120A2 a 3150 40n120 40N120A2
40N120 Abstract: 40n120d 40N120D1 40N120 DATASHEET D-68623 Text: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 E IXEH 40N120D1 Features t IGBT Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C	Original	PDF	40N120 40N120D1 O-247 40N120 40n120d 40N120D1 40N120 DATASHEET D-68623
40N120 Abstract: 40N120 DATASHEET D-68623 IXRH40N120 Text: IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE sat = 2.3 V typ. IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES	Original	PDF	40N120 O-247 IXRH40N120 40N120 40N120 DATASHEET D-68623 IXRH40N120
40N120 Abstract: 40N120 DATASHEET 40N120D1 160mJ D-68623 NS6002 40n120d Text: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 IXEH 40N120D1 E C (TAB) Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C	Original	PDF	40N120 40N120D1 O-247 40N120 40N120 DATASHEET 40N120D1 160mJ D-68623 NS6002 40n120d
Untitled Abstract: No abstract text available Text: IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE sat = 2.3 V typ. IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES	Original	PDF	40N120 O-247 IXRH40N120
40n120 Abstract: 40N120D1 40N120 DATASHEET 40n120 igbt D-68623 40n120d Text: Advanced Technical Information NPT3 IGBT IC25 IXEH 40N120 IXEH 40N120D1 VCES with optional diode VCE sat typ. = 60 A = 1200 V = 2.4 V TO-247 AD G C IXEH 40N120 IXEH 40N120D1 E C (TAB) Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings	Original	PDF	40N120 40N120D1 O-247 40N120D1 40n120 40N120 DATASHEET 40n120 igbt D-68623 40n120d
40n120 Abstract: 40N120D1 Text: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 IXEH 40N120D1 E C (TAB) Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C	Original	PDF	40N120 40N120D1 O-247 40N120 40N120D1
40N120 Abstract: No abstract text available Text: IXRH 40N120 Advanced Technical Information VCES = ±1200 V IC25 = 55 A VCE sat = 2.2 V IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings	Original	PDF	40N120 O-247 40N120
Untitled Abstract: No abstract text available Text: IXGH 40N120A2 IXGT 40N120A2 High Voltage IGBT Low VCE sat IXGH 40N120A2 IXGT 40N120A2 VCES = 1200 V IC25 = 75 A VCE(sat) ≤ 2.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCES TJ = 25°C to 150°C 1200	Original	PDF	40N120A2 IC110
Untitled Abstract: No abstract text available Text: 40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering	Original	PDF	NGTB40N120IHRWG NGTB40N120IHR/D
40n120 Abstract: 40N120FL NGTB40N120FLWG MC 140 transistor NGTB40N120 Text: 40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is	Original	PDF	NGTB40N120FLWG NGTB40N120FLW/D 40n120 40N120FL MC 140 transistor NGTB40N120

Untitled Abstract: No abstract text available Text: 40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is	Original	PDF	NGTB40N120FLWG NGTB40N120FLW/D
40N120IHR Abstract: No abstract text available Text: 40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering	Original	PDF	NGTB40N120IHRWG NGTB40N120IHR/D 40N120IHR
Untitled Abstract: No abstract text available Text: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited	Original	PDF	NGTB40N120FL2WG NGTB40N120FL2W/D
Untitled Abstract: No abstract text available Text: 40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is	Original	PDF	NGTB40N120FLWG NGTB40N120FLW/D
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Untitled Abstract: No abstract text available Text: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited	Original	PDF	NGTB40N120FL2WG NGTB40N120FL2W/D
Untitled Abstract: No abstract text available Text: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited	Original	PDF	NGTB40N120FL2WG NGTB40N120FL2W/D
Untitled Abstract: No abstract text available Text: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited	Original	PDF	NGTB40N120FL2WG NGTB40N120FL2W/D
NGTB40N120LWG Abstract: 40N120L Text: 40N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on−state voltage and minimal switching loss, the IGBT is	Original	PDF	NGTB40N120LWG NGTB40N120L/D 40N120L
30N120D1 Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1 Text: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120	OCR Scan	PDF	O-268 35-06C 40-06D OT-227B 50-12E 50-12BD 30N120D1 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1

40N120 Search Results

40N120 Price and Stock

onsemi NVBG040N120SC1

Micro Commercial Components MIW40N120FLA-BP

Infineon Technologies AG IKW40N120T2FKSA1

IXYS Corporation IXYH40N120B3D1

onsemi NTBG040N120M3S

40N120 Datasheets Context Search

40N120

IXGX40N120BD1

BSC 27 flyback

40N120A

40N120

40N120

40N120

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40n120

40n120

40N120

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40n120

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40N120IHR

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7N60B equivalent

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NGTB40N120LWG

30N120D1