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    40N120 Search Results

    40N120 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TRS40N120HB Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 1200 V, 40 A, 2 in 1, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    TW140N120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 20 A, 0.182 Ω@18 V, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
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    40N120 Price and Stock

    onsemi NVBG040N120SC1

    TRANS SJT N-CH 1200V 60A D2PAK-7
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    DigiKey NVBG040N120SC1 Reel 2,400 800
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    Onlinecomponents.com NVBG040N120SC1
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    Richardson RFPD NVBG040N120SC1 800
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    Avnet Asia NVBG040N120SC1 18 Weeks 800
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    Avnet Silica NVBG040N120SC1 19 Weeks 800
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    Win Source Electronics NVBG040N120SC1 1,354
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    Wuhan P&S NVBG040N120SC1 596 1
    • 1 $43.61
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    Micro Commercial Components MIW40N120FLA-BP

    IGBT TRENCH FS 1200V 80A TO247AB
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    DigiKey MIW40N120FLA-BP Tube 1,656 1
    • 1 $11.6
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    Infineon Technologies AG IHW40N120R5XKSA1

    IGBT TRENCH FS 1200V 80A TO247-3
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    DigiKey IHW40N120R5XKSA1 Tube 950 1
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    Avnet Americas IHW40N120R5XKSA1 Tube 210 19 Weeks 30
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    IHW40N120R5XKSA1 Bulk 18 Weeks, 3 Days 1
    • 1 $4.73
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    Newark IHW40N120R5XKSA1 Bulk 150 1
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    TME IHW40N120R5XKSA1 143 1
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    ComSIT USA IHW40N120R5XKSA1 180
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    Chip One Stop IHW40N120R5XKSA1 Tube 645
    • 1 $3.54
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    onsemi NTC040N120SC1

    SIC MOS WAFER SALES 40MOHM 1200V
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    DigiKey NTC040N120SC1 Tray 819 819
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    Avnet Americas NTC040N120SC1 Bulk 19 Weeks 52
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    Onlinecomponents.com NTC040N120SC1
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    Richardson RFPD NTC040N120SC1 52
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    EBV Elektronik NTC040N120SC1 20 Weeks 1
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    Infineon Technologies AG IKY40N120CS6XKSA1

    IGBT TRENCH FS 1200V 80A TO247-4
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    DigiKey IKY40N120CS6XKSA1 Tube 713 1
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    Avnet Americas IKY40N120CS6XKSA1 Tube 19 Weeks 240
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    Newark IKY40N120CS6XKSA1 Bulk 329 1
    • 1 $8.48
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    • 100 $5.26
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    TME IKY40N120CS6XKSA1 1
    • 1 $8.83
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    Chip One Stop IKY40N120CS6XKSA1 Tube 240
    • 1 $5.44
    • 10 $4.66
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    Find more 40N120 price and stock on Findchips.com

    40N120 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    40N120

    Abstract: IXRH 50N120 40N120 DATASHEET 50N120 bi-directional switches IGBT induction heating D-68623
    Text: IXRH 40N120 Advanced Technical Information VCES = 1200 V IC25 = 55 A VCE sat = 2.2 V IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings


    Original     		40N120 O-247 40N120 IXRH 50N120 40N120 DATASHEET 50N120 bi-directional switches IGBT induction heating D-68623 PDF

    IXGX40N120BD1

    Abstract: max3037 2040q
    Text: Advanced Technical Information High Voltage IGBT with Diode IXGX 40N120BD1 VCES IC25 VCE sat = 1200 = 75 = 3.3 = 250 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous


    Original     		40N120BD1 IC110 IF110 PLUS247 405B2 IXGX40N120BD1 max3037 2040q PDF

    BSC 27 flyback

    Abstract: induction heating circuits IXEH40N120B2D4 igbt for induction heating igbt for induction heating ic
    Text: IXEH 40N120B2D4 Advanced Technical Information IC25 = 65 A = 1200 V VCES VCE sat typ = 2.4 V SPT IGBT High Frequency Applications: • induction heating • flyback converters • resonant-mode power supplies C TO-247 AD G E G C E C (TAB) Features IGBT Conditions


    Original     		40N120B2D4 O-247 BSC 27 flyback induction heating circuits IXEH40N120B2D4 igbt for induction heating igbt for induction heating ic PDF

    40N120A

    Abstract: IXGT 40N120A2 a 3150 40n120 40N120A2
    Text: IXGH 40N120A2 IXGT 40N120A2 High Voltage IGBT Low VCE sat IXGH 40N120A2 IXGT 40N120A2 VCES = 1200 V IC25 = 75 A VCE(sat) ≤ 2.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCES TJ = 25°C to 150°C 1200


    Original     		40N120A2 IC110 O-247 40N120A IXGT 40N120A2 a 3150 40n120 40N120A2 PDF

    40N120

    Abstract: 40n120d 40N120D1 40N120 DATASHEET D-68623
    Text: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 E IXEH 40N120D1 Features t IGBT Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C


    Original     		40N120 40N120D1 O-247 40N120 40n120d 40N120D1 40N120 DATASHEET D-68623 PDF

    40N120

    Abstract: 40N120 DATASHEET D-68623 IXRH40N120
    Text: IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE sat = 2.3 V typ. IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES


    Original     		40N120 O-247 IXRH40N120 40N120 40N120 DATASHEET D-68623 IXRH40N120 PDF

    40N120

    Abstract: 40N120 DATASHEET 40N120D1 160mJ D-68623 NS6002 40n120d
    Text: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 IXEH 40N120D1 E C (TAB) Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C


    Original     		40N120 40N120D1 O-247 40N120 40N120 DATASHEET 40N120D1 160mJ D-68623 NS6002 40n120d PDF

    Untitled

    Abstract: No abstract text available
    Text: IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE sat = 2.3 V typ. IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES


    Original     		40N120 O-247 IXRH40N120 PDF

    40n120

    Abstract: 40N120D1 40N120 DATASHEET 40n120 igbt D-68623 40n120d
    Text: Advanced Technical Information NPT3 IGBT IC25 IXEH 40N120 IXEH 40N120D1 VCES with optional diode VCE sat typ. = 60 A = 1200 V = 2.4 V TO-247 AD G C IXEH 40N120 IXEH 40N120D1 E C (TAB) Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings


    Original     		40N120 40N120D1 O-247 40N120D1 40n120 40N120 DATASHEET 40n120 igbt D-68623 40n120d PDF

    40n120

    Abstract: 40N120D1
    Text: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 IXEH 40N120D1 E C (TAB) Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C


    Original     		40N120 40N120D1 O-247 40N120 40N120D1 PDF

    40N120

    Abstract: No abstract text available
    Text: IXRH 40N120 Advanced Technical Information VCES = ±1200 V IC25 = 55 A VCE sat = 2.2 V IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings


    Original     		40N120 O-247 40N120 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXGH 40N120A2 IXGT 40N120A2 High Voltage IGBT Low VCE sat IXGH 40N120A2 IXGT 40N120A2 VCES = 1200 V IC25 = 75 A VCE(sat) ≤ 2.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCES TJ = 25°C to 150°C 1200


    Original     		40N120A2 IC110 PDF

    Untitled

    Abstract: No abstract text available
    Text: 40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering


    Original     		NGTB40N120IHRWG NGTB40N120IHR/D PDF

    40n120

    Abstract: 40N120FL NGTB40N120FLWG MC 140 transistor NGTB40N120
    Text: 40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original     		NGTB40N120FLWG NGTB40N120FLW/D 40n120 40N120FL MC 140 transistor NGTB40N120 PDF

    Untitled

    Abstract: No abstract text available
    Text: 40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original     		NGTB40N120FLWG NGTB40N120FLW/D PDF

    40N120IHR

    Abstract: No abstract text available
    Text: 40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering


    Original     		NGTB40N120IHRWG NGTB40N120IHR/D 40N120IHR PDF

    Untitled

    Abstract: No abstract text available
    Text: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original     		NGTB40N120FL2WG NGTB40N120FL2W/D PDF

    Untitled

    Abstract: No abstract text available
    Text: 40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original     		NGTB40N120FLWG NGTB40N120FLW/D PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    Untitled

    Abstract: No abstract text available
    Text: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original     		NGTB40N120FL2WG NGTB40N120FL2W/D PDF

    Untitled

    Abstract: No abstract text available
    Text: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original     		NGTB40N120FL2WG NGTB40N120FL2W/D PDF

    Untitled

    Abstract: No abstract text available
    Text: 40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original     		NGTB40N120FL2WG NGTB40N120FL2W/D PDF

    NGTB40N120LWG

    Abstract: 40N120L
    Text: 40N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on−state voltage and minimal switching loss, the IGBT is


    Original     		NGTB40N120LWG NGTB40N120L/D 40N120L PDF

    30N120D1

    Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1
    Text: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120


    OCR Scan     		O-268 35-06C 40-06D OT-227B 50-12E 50-12BD 30N120D1 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1 PDF