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    40E1D Search Results

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    40E1D Price and Stock

    Rochester Electronics LLC HGTP6N40E1D

    7.5A, 400V, N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTP6N40E1D Bulk 423
    • 1 -
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    • 1000 $0.71
    • 10000 $0.71
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    Fabco-Air 15S1-40E1DC-XXN

    Cylinder, tie rod, 1-1/2" bore, 40-1/4" stroke, angle mount, NFPA Series | Fabco-Air 15S1-40E1DC-XXN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 15S1-40E1DC-XXN Bulk 1
    • 1 $464.01
    • 10 $464.01
    • 100 $464.01
    • 1000 $464.01
    • 10000 $464.01
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    Harris Semiconductor HGTH12N40E1D

    12A, 400V, N-Channel IGBT WITH ANTI-PARALLEL HYPERFAST DIODE '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTH12N40E1D 109 1
    • 1 $2.39
    • 10 $2.39
    • 100 $2.25
    • 1000 $2.03
    • 10000 $2.03
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    Harris Semiconductor HGTP10N40E1D

    17.5A, 400V, N-Channel IGBT '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTP10N40E1D 162 1
    • 1 $1.52
    • 10 $1.52
    • 100 $1.43
    • 1000 $1.29
    • 10000 $1.29
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    Harris Semiconductor HGTP6N40E1D

    7.5A, 400V, N-Channel IGBT '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTP6N40E1D 1,131 1
    • 1 $0.6826
    • 10 $0.6826
    • 100 $0.6416
    • 1000 $0.5802
    • 10000 $0.5802
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    40E1D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HGTH12N40C1D

    Abstract: HGTH12N40E1D HGTH12N50C1D HGTH12N50E1D G12N40E1D
    Text: HGTH12N40C1D, 40E1D, HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 12A, 400V and 500V JEDEC TO-218AC • VCE ON : 2.5V Max. EMITTER • TFALL: 1µs, 0.5µs COLLECTOR


    Original
    PDF HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D O-218AC HGTH12N50E1D HGTH12N40C1D HGTH12N40E1D HGTH12N50C1D G12N40E1D

    G20N50c

    Abstract: g20n50c1d g20n50 50E1D 50C1D G20N40C1D G20N50E1D g20n50c1 HGTH20N50C1D HGTH20N40C1D
    Text: HGTH20N40C1D, 40E1D, HGTH20N50C1D, HGTH20N50E1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 20A, 400V and 500V JEDEC TO-218AC • VCE ON 2.5V Max. EMITTER COLLECTOR (FLANGE) • TFALL 1µs, 0.5µs


    Original
    PDF HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D O-218AC HGTH20N50E1D G20N50c g20n50c1d g20n50 50E1D 50C1D G20N40C1D G20N50E1D g20n50c1 HGTH20N50C1D HGTH20N40C1D

    HGTH12N40E1D

    Abstract: HGTH12N40C1D HGTH12N50C1D HGTH12N50E1D 50uh
    Text: HGTH12N40C1D, 40E1D, HGTH12N50C1D, HGTH12N50E1D S E M I C O N D U C T O R 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 12A, 400V and 500V JEDEC TO-218AC • VCE ON : 2.5V Max. EMITTER • TFALL: 1µs, 0.5µs


    Original
    PDF HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D O-218AC HGTH12N50E1D voltage260) HGTH12N40E1D HGTH12N40C1D HGTH12N50C1D 50uh

    10n50c1d

    Abstract: 10N50E1D 10n40c HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1D 10N50C1 10n50c 50C1D
    Text: HGTP10N40C1D, 40E1D, HGTP10N50C1D, HGTP10N50E1D S E M I C O N D U C T O R 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • VCE ON : 2.5V Max. EMITTER COLLECTOR


    Original
    PDF HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D O-220AB HGTP10N50E1D 150oC 10n50c1d 10N50E1D 10n40c HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D 10N50C1 10n50c 50C1D

    G20N50c

    Abstract: g20n50c1d g20n50 g20N50c1 G20N40 igbt 400V 20A "Power Diode" 500V 20A power Diode 400V 20A G20N50E1D HGTH20N50E1D
    Text: S E M I C O N D U C T O R HGTH20N40C1D, 40E1D, HGTH20N50C1D, HGTH20N50E1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 20A, 400V and 500V JEDEC TO-218AC • VCE ON 2.5V Max. EMITTER COLLECTOR


    Original
    PDF HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D O-218AC HGTH20N50E1D 150oC G20N50c g20n50c1d g20n50 g20N50c1 G20N40 igbt 400V 20A "Power Diode" 500V 20A power Diode 400V 20A G20N50E1D

    10n50c1d

    Abstract: 10N50E1D 10n40c 10N40E 10n50c 10N50C1 10n40 diode 10a 400v 10N40C1 10N50E1
    Text: HGTP10N40C1D, 40E1D, HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • VCE ON : 2.5V Max. EMITTER COLLECTOR GATE • TFALL: 1µs, 0.5µs


    Original
    PDF HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D O-220AB HGTP10N50E1D 10n50c1d 10N50E1D 10n40c 10N40E 10n50c 10N50C1 10n40 diode 10a 400v 10N40C1 10N50E1

    G20N50c

    Abstract: 20N50C1D GE 639 1D50C "parallel diode" 20N50E 443 20N 20n50c
    Text: i \M J H A R R I S semiconductor H G TH 20N 40C 1D , H G TH 20N 40E1D , H G TH 20N 50C 1D , H G TH 20N 50E 1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aphi 1995 Features Package • 20A, 400V and 500V • ^ C E O N JEDEC TO-218AC


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    PDF 40E1D O-218AC HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D AN7254 AN7260) G20N50c 20N50C1D GE 639 1D50C "parallel diode" 20N50E 443 20N 20n50c

    10N40E

    Abstract: 10n40e1d HGTP10N40E1D HGTP10N40C1D HGTP10N50C1D HGTP10N50E1D ls25 diode diode OA-75
    Text: bSE HARRIS SEtllCOND SECTOR H A R R I S S E M I C O N D U C T O R 1> Bfl M 3G 22 71 005D2b4 850 H H A S HGTP10N40C1D, 40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features


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    PDF M3D2271 00502L HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D HGTP10N40E1D, HGTP10N50E1D 10N40E 10n40e1d HGTP10N40C1D HGTP10N50C1D ls25 diode diode OA-75

    pic 16 f 888

    Abstract: 12N50c
    Text: CU H A R R IS HGTH12N40C1D, 40E1D, HGTH12N50C1D, HGTH12N50E1D S E M I C O N D U C T O R 12A, 400V and 500V N-Channel IG B T s with Anti-Parallel Ultrafast D iodes Aprii 1995 Features Package • 12A, 400V and 500V J E D E C TO-218AC • V C E O N : 2 -5 V M a x • T FALL: 1 m s , 0 .5 ^ 8


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    PDF HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D O-218AC AN7254 AN7260) 100AJ pic 16 f 888 12N50c

    20n60b3d

    Abstract: 20N60B3 12n50e 12N60D1D 20N50C1D 12n60d1c 6N50E1D 12N50E1D gtp10n tp10n40c
    Text: HARRIS IGBT PRODUCT LINE Selection Guide co co IGBTs co HARRIS IGBT PRODUCT LINE Continued Selection Guide NO TE S: 3 -4 1 • 'c 9 0 = m axim um continuous current rating at T c = +90°C. 2. ! q M = m axim um pulsed current rating. 3. t F m easured a t Tc = +150°C.


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    PDF -220A 60B3D 20n60b3d 20N60B3 12n50e 12N60D1D 20N50C1D 12n60d1c 6N50E1D 12N50E1D gtp10n tp10n40c

    10n50c1d

    Abstract: 10N50E1D 10N40E ultrafast diode 10a 300v 50E1D 10N50E1 400v 5A 1Y 10N40C1
    Text: m l-L A J R F R IS tip s E M , c o N D u c T o R HGTP10N40C1D, 40E1D, HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Features Package • 10A, 400V and 500V JEDEC TO-22QAB • ^CE ON ' 2.5V Max.


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    PDF HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D O-22QAB HGTP10N50E1D AN7254 10n50c1d 10N50E1D 10N40E ultrafast diode 10a 300v 50E1D 10N50E1 400v 5A 1Y 10N40C1

    Diode LT 443

    Abstract: diode lt 823 948 LG DIODE gep 45 diode 100A-4V HGTP10N40C1D
    Text: rjn HARRIS VMJ s e m i c o n d u c t o r HGTP10N40C1D, 40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features JE D E C TD-220AB • 10 Amp, 400 and 500 Volt T O P VIEW • V c e o n 2.5V Max.


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    PDF HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D TD-220AB TP10N AN7254 AN7260) Diode LT 443 diode lt 823 948 LG DIODE gep 45 diode 100A-4V HGTP10N40C1D

    pj 809

    Abstract: PJ 969 diode PJ 986 diode 047 pj 986 diode EM- 534 motor PJ 969 GE 639
    Text: fffi HARRIS C iI s E M , co N D u cToB HGTH12N40C1D, 40E1D HGTH12N50C 1D , HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features • JEDEC TO-218AC TOP VIEW 12 Amp, 400 and 500 Volt • V ce ON ‘ 2.5V Max.


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    PDF HGTH12N40C1D, HGTH12N40E1D HGTH12N50C HGTH12N50E1D O-218AC HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D pj 809 PJ 969 diode PJ 986 diode 047 pj 986 diode EM- 534 motor PJ 969 GE 639

    Untitled

    Abstract: No abstract text available
    Text: HARRI S SEHICOND SECTOR ill H A R R IS \M J s e m i c o n d u c t o r bôE D • M3D2S71 HAS 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Features Package • 20 Amp, 400 and 500 Volt JEDEC TO-218 AC TOP VIEW • Vce on 2.5V Max.


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    PDF M3D2S71 O-218 HGTH20N40C1D, HGTH20N40E1D HGTH20N50C1D, HGTH20N50E1D AN7254 AN7260) 100AJ

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEtlICOND SECTOR Ì l ì H A R R IS VM J s e m .c o n d u c t o r bflE » Bi M3GE271 OGSOEbM 660 * H A S HGTP10N40C1D, 40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package


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    PDF M3GE271 HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D O-220AB AN72S4 AN7260)

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEIUCON» SECTOR bö E B M3D2S71 G0 S0 2? i » 72T HHAS HARRIS HGTH12N40C1D, 40E1D s E M , c o N D u c T o R HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features •


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    PDF M3D2S71 HGTH12N40C1D, HGTH12N40E1D HGTH12N50C1D, HGTH12N50E1D O-218AC 40E1D/50E1D D/50C1D AN7254 AN7260)