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    onsemi NGTB40N120IHLWG

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    NGTB40N120IHLWG

    Abstract: 40N120IHL BIPOLAR TRANSISTOR
    Text: 40N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		NGTB40N120IHLWG NGTB40N120IHLW/D 40N120IHL BIPOLAR TRANSISTOR PDF

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    Abstract: No abstract text available
    Text: 40N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		NGTB40N120IHLWG NGTB40N120IHLW/D PDF