4139MO Search Results
4139MO Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
---|---|---|---|
Contextual Info: Ordering number: EN 3080 F C 112 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features • On-chip bias resistors Ri = 22kft,R2 = 22k£2 • Composite type with 2 transistors contained in the CP package currently in use, improving the |
OCR Scan |
22kft FC112 2SC3396, | |
2sc3398Contextual Info: Ordering number: E N 3 0 8 2 _F C 1 1 4 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features • On-chip bias resistors Rj = 10ki2,R2 = 10k£2 • Composite type with 2 transistors contained in the CP package currently in use, improving the |
OCR Scan |
10ki2 FC114 2SC3398, 2sc3398 | |
Contextual Info: IS A N Y O SEMICONDUCTOR CORP 22E DODTBTG 7 ^ 7 0 7 1 , J> G T -35-Ì/ FC116 N P N Epitaxial Planar S ilico n C o m p o site Transistor 2066 Switching Applications with Bias Resistances R1=10kfi, R2=10kfl 13Mi Features • On-chip bias resistors (Ri = 10kfl,R2 = lOkfl) |
OCR Scan |
FC116 10kfi, 10kfl) 10kfl FC116 2SC3398, 4139MO/TS T-35-11 | |
Contextual Info: SANYO SEMICONDUCTOR CORP 52E D 7TT7Q7b □00737t FC109 b T-37-/3 P N P Epitaxial Planar S ilico n C o m p o site Transistor 2067 Switching Applications with Bias Resistances R1=22ki2, R2=22kn F eatures •On-chip bias resistors (Rj = 22kQ,R2= 22ki2) • Composite type with 2 transistors contained in the CP package currently in use, improving the |
OCR Scan |
00737t FC109 T-37-/3 22ki2, 22ki2) FC109 2SA1342, 4139MO | |
Contextual Info: SANYO SEMICONDUCTOR FC107 CORP E2E D 7 cn 7 D 7 b Q0G7372 1 T-Sl-ll # P N P Epitaxial Planar S ilicon C o m p o site Transistor 2066 Switching Applications 3075 with Bias Resistances R1=47ki2, R2=47kO Features • On-chip bias resistors (Ri = 47kfl,R2= 47k£2) |
OCR Scan |
FC107 Q0G7372 47ki2, 47kfl FC107 2SA1341, 4139MO QD07373 | |
Contextual Info: SANYO SEMICONDUCTOR FC112 CORP SEE D 7 eH 7 0 7 b 0 0 0 7 3 0 2 1 T -3 S -II # N P N Epitaxial Planar S ilico n C o m p o site Transistor 2066 Switching Applications 3080 with Bias Resistances R1=22kQ, R2=22kO F ea tu res On-chip bias resistors (Ri = 22kQ,R2= 22kfl) |
OCR Scan |
FC112 22kfl) FC112 2SC3396, 4139MO | |
2SA1342
Abstract: EN3077 FC109
|
Original |
EN3077 FC109 FC109 2SA1342, FC109] 2SA1342 EN3077 | |
2SA1342
Abstract: FC111 EN3079
|
Original |
EN3079 FC111 FC111 2SA1342, FC111] 2SA1342 EN3079 | |
w21 transistor
Abstract: 2SC4492 30983
|
OCR Scan |
2SC4492 w21 transistor 2SC4492 30983 | |
EN3081
Abstract: 2SA1344
|
OCR Scan |
EN3081 FC113 2SA1344, EN3081 2SA1344 | |
3079-2Contextual Info: Ordering number: EN 3079 No.3079 SMiVO, F C l l l PNP Epitaxial Planar Silicon Composite Transistor i Switching Applications Features • On-chip bias resistors Ri = 22kfl,R2 = 22kQ • Composite type with 2 transistors contained in the CP package currently in use, improving the |
OCR Scan |
22kfl 2SA1342, 3079-2 | |
TRANSISTOR 2067Contextual Info: SANYO S E MI CO ND UCTOR CÔRP SHE D 7‘ =H707b 0 00 737Ô T FC110 T-35-H # N PN Epitaxial Planar Silicon C om posite Transistor 2067 Switching Applications with Bias Resistances R 1=22kfl, R2=22kO 3078 F e a tu re s • On-chip bias resistors (Rj = 22k£l,R2= 22k£i) |
OCR Scan |
FC110 T-35-H 22kfl, FC110 2SC3396, TRANSISTOR 2067 | |
Contextual Info: SANYO SEMI CONDUCTOR FC115 CORP SEE D ? c\c\7Q7h 00Q7 3 0 Ô S T - 3P # -1 3 P N P Epitaxial P la n a r S ilic o n C o m p o s it e T ra n s is to r 2066 i Switching Applications £3083 . I - . with Bias Resistances R1=10ki2, R2=10k£2 |
OCR Scan |
FC115 10ki2, FC115 2SA1344, 4139MO H707b 00073fiT T-37-13 | |
2SC3396
Abstract: FC110
|
Original |
EN3078 FC110 FC110 2SC3396, FC110] 2SC3396 | |
|
|||
EN3084
Abstract: 2SC3398 FC116
|
Original |
EN3084 FC116 FC116 2SC3398, FC116] EN3084 2SC3398 | |
2SC4493
Abstract: transistor KT 209 2049C
|
Original |
EN3099 2SC4493 2049C 2SC4493] O-220MF 2SC4493 transistor KT 209 2049C | |
2SC3395
Abstract: FC108 marking 107
|
Original |
EN3076 FC108 FC108 2SC3395, FC108] 2SC3395 marking 107 | |
marking115
Abstract: 2SA1344 FC115
|
Original |
EN3083 FC115 FC115 2SA1344, FC115] marking115 2SA1344 | |
2SC3398
Abstract: FC114
|
Original |
EN3082 FC114 FC114 2SC3398, FC114] 2SC3398 | |
3079-2
Abstract: 2SA1342 FC111
|
Original |
EN3079 FC111 FC111 2SA1342, FC111] 3079-2 2SA1342 | |
2SA1341
Abstract: FC107
|
Original |
EN3075 FC107 FC107 2SA1341, FC107] 2SA1341 | |
Contextual Info: S AN Y O SEMICONDUCTOR C O RP 22E 7 ‘H 7 Q 7 b D 0007374 S T-3S- lì FC108 NPN Epitaxial Planar Silicon Composite Transìstor 2066 Switching Applications Î3076 with Bias Resistances R 1=47kQ , R 2=47kil F eatures • On-chip bias resistors (Ri= 47kfl,R2= 47kft) |
OCR Scan |
FC108 47kil) 47kfl 47kft) FC108 2SC3395, 4139MO/TS T-35-11 | |
Contextual Info: SANYO SEMICONDUCTOR FC111 CORP 22E D 7Tî707t Q0D73Ô0 ñ T-37-/3 # PNP Epitaxial Planar Silicon Com posite Transistor 2066 Switching Applications 3079 with Bias Resistances R1=22kfl, R2=22kO Features • On-chip bias resistors (Ri = 22kfl,R2= 22kQ) • Composite type with 2 transistors contained in the CP package currently in use, improving the |
OCR Scan |
FC111 Q0D73Ã T-37-/3 22kfl, 22kfl 2SA1342, 4139MO | |
sanyo 3076
Abstract: fc108
|
OCR Scan |
FC108 47ki2 47kfi) FC108 2SC3395, sanyo 3076 |