MSM5116400F
Abstract: MSM5116400
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: KIT ATION EVALU E L B AVAILA 19-2097; Rev 1; 2/07 Dual 10-Bit, 105Msps, 3.3V, Low-Power ADC with Internal Reference and Parallel Outputs PIN-PACKAGE -40°C to +85°C 48 TQFP-EP* MAX1180ECM+ -40°C to +85°C 48 TQFP-EP* +Denotes a lead-free and RoHS-compliant package.
|
Original
|
PDF
|
10-Bit,
105Msps,
MAX1180
413mW,
20MHz
105Msps.
400MHz
|
Untitled
Abstract: No abstract text available
Text: KIT ATION EVALU E L B AVAILA 19-2097; Rev 1; 2/07 Dual 10-Bit, 105Msps, 3.3V, Low-Power ADC with Internal Reference and Parallel Outputs PIN-PACKAGE -40°C to +85°C 48 TQFP-EP* MAX1180ECM+ -40°C to +85°C 48 TQFP-EP* +Denotes a lead-free and RoHS-compliant package.
|
Original
|
PDF
|
10-Bit,
105Msps,
MAX1180
413mW,
20MHz
105Msps.
400MHz
|
200849
Abstract: No abstract text available
Text: 19-2097; Rev 0; 7/01 Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC with Internal Reference and Parallel Outputs Features ♦ Single +3.3V Operation ♦ Excellent Dynamic Performance: 58.5dB SNR at fIN = 20MHz 72dB SFDR at fIN = 20MHz ♦ SNR Flat within 1dB for fIN = 202MHz to 100MHz
|
Original
|
PDF
|
10-Bit,
105Msps,
MAX1180
413mW,
20MHz
105Msps.
400MHz
200849
|
MSM5116400F
Abstract: MSM5116400
Text: FEDD5116400F-01 1Semiconductor MSM5116400F This version: May 2001 Previous version : 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
|
Original
|
PDF
|
FEDD5116400F-01
MSM5116400F
304-Word
MSM5116400F
26/24-pin
MSM5116400
|
Untitled
Abstract: No abstract text available
Text: KIT ATION EVALU E L B AVAILA 19-2097; Rev 1; 2/07 Dual 10-Bit, 105Msps, 3.3V, Low-Power ADC with Internal Reference and Parallel Outputs -40°C to +85°C 48 TQFP-EP* *EP = Exposed paddle. Functional Diagram appears at end of data sheet. 37 38 39 40 41 42 43
|
Original
|
PDF
|
10-Bit,
105Msps,
MAX1180
|
MAX1180
Abstract: MAX1180ECM MAX1181 MAX1182 MAX1183 MAX1184 MAX1185 MAX2451 MAX4108
Text: KIT ATION EVALU E L B AVAILA 19-2097; Rev 1; 2/07 Dual 10-Bit, 105Msps, 3.3V, Low-Power ADC with Internal Reference and Parallel Outputs PIN-PACKAGE -40°C to +85°C 48 TQFP-EP* MAX1180ECM+ -40°C to +85°C 48 TQFP-EP* +Denotes a lead-free and RoHS-compliant package.
|
Original
|
PDF
|
10-Bit,
105Msps,
MAX1180ECM+
MAX1180
MAX1180
MAX1180ECM
MAX1181
MAX1182
MAX1183
MAX1184
MAX1185
MAX2451
MAX4108
|
MSM5116400D
Abstract: D-50 D-60 MSM5116400 MSM5116400D-50 MSM5116400D-60 MSM5116400D-70
Text: Semiconductor This version:Apr.1999 MSM5116400D 4,194,304-Word ´ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400D is a 4,194,304-word ´ 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116400D achieves high integration, high-speed operation, and low-power consumption
|
Original
|
PDF
|
MSM5116400D
304-Word
MSM5116400D
26/24-pin
cycles/64
D-50
D-60
MSM5116400
MSM5116400D-50
MSM5116400D-60
MSM5116400D-70
|
4A04I
Abstract: tc514100a
Text: TC51441OAP/AJ/ASJ/AZ—70, TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 PRELIMINARY 1,048,576 W ORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC51441 OAP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as
|
OCR Scan
|
PDF
|
TC51441OAP/AJ/ASJ/AZ--
TC51441OAP/AJ/ASJ/AZ-80
TC51441OAP/AJ/ASJ/AZ-10
TC51441
TC514410AP/AJ/ASJ/AZ
350mil)
TC514100AP/AJ/ASJ/AZ.
TC5141OOAP/AJ/ASJ/AZ-60
4A04I
tc514100a
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY 4,194,304 WORD x 1 BIT DYNAMIC RAM DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.
|
OCR Scan
|
PDF
|
TC514101AP/AJ/ASJ/AZ
300/350mil)
TC514101AP/ASJ/AZ.
TC514101AP/AJ/ASJ/A2-70,
TC514101AP/AJ/ASJ/AZ-80
TC514101AP/AJ/ASJ/AZ-10
|
tc51100ap
Abstract: DIP18-P-300E TC514100
Text: 4,1 94 ,3 0 4 W O R D X PRELIMINARY 1 BIT D Y N A M IC RAM DESCRIPTION The TC514100AF/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as
|
OCR Scan
|
PDF
|
TC514100AF/AJ/ASJ/AZ
TC514100AP/AJ/ASJ/AZ
300/350mil)
TC514100AP/AJ/ASJ/AZ.
TC5141
TC514100AP/AJ/ASJ/AZ-80
tc51100ap
DIP18-P-300E
TC514100
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA LOGIC/MEMORY 4,194,304 W O R D X 42E » ^ 7 2 4 0 0 Q 2 0 ci7b T B 1 T 0 S 2 PRELIMINARY 1 "BIT D Y N A M IC R A M 7 - ji. - 2 3 - lS r DESCRIPTION The TC514100AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as
|
OCR Scan
|
PDF
|
0Q20c
TC514100AP/AJ/ASJ/AZ
TC514100
300/350mil)
TC5141OOAP/AJ/ASJ/AZ-70,
TC514100AP/AJ/ASJ/AZ-80
TC5141OOAP/AJ/ASJ/AZ-10
|
Untitled
Abstract: No abstract text available
Text: 1 0 4 8 ,5 7 6 W O R D x PRELIMINARY 4 BIT D Y N A M IC R A M DESCRIPTION The TC514402AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514402AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as
|
OCR Scan
|
PDF
|
TC514402AP/AJ/ASJ/AZ
300/350m
5514402AP/AJ/ASJ/AZ-80
TC514402AP/AJ/ASJ/AZâ
|
AZL-70
Abstract: No abstract text available
Text: PRELIMINARY 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC514400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400APL/AJL/ASJL/AZL utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the
|
OCR Scan
|
PDF
|
TC514400APL/AJL/ASJL/AZL
300/350mil)
tolTC514400APL/AJL/ASJIVAZL.
a512K
TC514400APL/AJ
L/AZL-70,
L/AZL-80
AZL-70
|
|
|
Untitled
Abstract: No abstract text available
Text: November 1989 Edition 1.1 FUJITSU DATASHEET MB81C1002-70/-80/-10/-12 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 1,048,576 X 1 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C1002 is CMOS fully decoded dynamic RAM organized as 1,048,576 words x 1
|
OCR Scan
|
PDF
|
MB81C1002-70/-80/-10/-12
MB81C1002
theMB81C1002
26-LEAD
SOJ-26)
LCC-26P-M04)
C26054S-1C
MB81C1002-70
|
TOLD-9211
Abstract: told 9211
Text: X T L I f l C A E TECHNOLOGY _ LT1110 Micropower DC-DC Converter Adjustable and Fixed 5V, 12V F€RTUR€S D C S C R IPTIO n • Operates at Supply Voltages From 1,0V to 30V ■ Works In Step-Up or Step-Down Mode ■ Only Three External Off-the-Shelf Components
|
OCR Scan
|
PDF
|
LT1110
LT1110
0105-470M
OLD-9211
262LYF-0076M
1S12LS-473
TOLD-9211
told 9211
|
Untitled
Abstract: No abstract text available
Text: KM48C512LL CMOS DRAM 512Kx8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C512LL is a CMOS high speed 524,288 b itx 8 Dynamic Random Access Memory. Its design is optimized for high performance applications
|
OCR Scan
|
PDF
|
KM48C512LL
512Kx8
KM48C512LL
KM48C512LL-7
130ns
KM48C512LL-8
150ns
KM48C512LL-10
100ns
180ns
|
Untitled
Abstract: No abstract text available
Text: SâE D • b72M2MD 0 0 1 2 7 ^ 0 0 K I SEI 1I C0NPUCT0R 344 I0K IJ GROUP O K I semiconductor_ ' MSM514256A 262,144-WORD x 4-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM514256A is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the MSM514256A is OKI’s CMOS silicon gate process technology.
|
OCR Scan
|
PDF
|
b72M2MD
MSM514256A
144-WORD
MSM514256A
|
814400
Abstract: marking CEZ MAS 10 RCD mb814400 MB814400-10 MB814400-12 MB814400-80 ZIP-20P-M02 marking Z1p
Text: Novem ber 1991 Edition3.0 :• , .-y,-.:. FUJITSU . DATASHEET M B 8 1 4400-80/-10/-12 CMOS 1 M X 4 B I T FAST PAGE MODE DRAM CM O S 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400 is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304
|
OCR Scan
|
PDF
|
MB814400-80/-1o/-12
MB814400
MB614400
024-bits
814400
marking CEZ
MAS 10 RCD
MB814400-10
MB814400-12
MB814400-80
ZIP-20P-M02
marking Z1p
|
ALT1110
Abstract: TOLD-9211 told 9211 0621a sprague 501D 501d sprague LT1111 TOLD9211
Text: _ LT1110 / T l i nTECHNOLOGY tA B Micropower DC-DC Converter Adjustable and Fixed 5V, 12V FCRTURCS DCSCRIPTIOn • Operates at Supply Voltages From 1 .OV to 30V ■ Works in Step-Up or Step-Down Mode ■ Only Three External Off-the-Shelf Components
|
OCR Scan
|
PDF
|
LT1110
70kHz
ALT1110
TOLD-9211
told 9211
0621a
sprague 501D
501d sprague
LT1111
TOLD9211
|
Untitled
Abstract: No abstract text available
Text: MN 4 1 C 1 0 0 0 A / Â L / À S J - 06/07/08 SPECIFICATIONS 20 1 1M BIT □ 1 bit. CMOS processing wide operating r a n g e and is s u i t a b l e to a p p l i c a t i o n s r a n g i n g to c o n s u m e r □ RAM is t h e new g e n e r a t i o n C M O S d y n a m i c RAM o r g a n i z e d
|
OCR Scan
|
PDF
|
MN41C1000A
MN41C1000A/AL/ASJ
10PIN
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs Rev. 3.0 M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 4194304-BIT 524288-WORD BY 8-BIT DYNAMIC RAM PIN CONFIGURATION ( TOP VIEW ) D E SC R IP T IO N This is a family of 524288-word by 8-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for large-capacity
|
OCR Scan
|
PDF
|
M5M44800CJ
4194304-BIT
524288-WORD
|
Untitled
Abstract: No abstract text available
Text: O K I semiconductor M S M 5 1 4 2 5 8 A _ 262,144-W O R D x 4-B IT DYNAM IC RAM GENERAL DESCRIPTION The MSM514258A is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the MSM514258A is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
PDF
|
MSM514258A
MSM514258A
144-word
|
TOLD-9211
Abstract: No abstract text available
Text: " X T ^ u r m TECHNOLOGY _ LT111Q Micropower DC-DC Converter Adjustable and Fixed 5V, 12V F€RTUR€S D € S C R IP T IO n • Operates at Supply Voltages From 1,0V to 30V ■ Works In Step-Up or Step-Down Mode ■ Only Three External Off-the-Shelf Components
|
OCR Scan
|
PDF
|
LT1110
130cC/W
TOLD-9211
|
