Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    417 MOSFET Search Results

    417 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    417 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cdi ignition

    Abstract: MKP 338 2 X2 ENEC KP H 1000 pF axial R.46 MKP X2 MKP 1813 MKP 339 1 X1 MKP Y2/X1 mkp x2 enec MKP 339 1 capacitor r. 46 mkp x2
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . C apacit o rs S elect o r G ui d e Film capacitors 303 / 304 312 313 314 338 1 338 4 338 6 339 3 6 5 - 3 67 370 - 373 375 38 3 38 5 38 6 40 5 416 - 417 - 418 - 419 - 420 422 - 422 mini 467 - 46 8 - 46 9 471


    Original
    PDF VMN-SG0042-0704 cdi ignition MKP 338 2 X2 ENEC KP H 1000 pF axial R.46 MKP X2 MKP 1813 MKP 339 1 X1 MKP Y2/X1 mkp x2 enec MKP 339 1 capacitor r. 46 mkp x2

    IXFD21N100F-8F

    Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
    Text: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005


    Original
    PDF IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD180N085-9X IXFD280N085-9Y IXFD75N10-7X IXFD80N10Q-8X IXFD170N10-9X IXFD230N10-9Y IXFD70N15-7X IXFD21N100F-8F IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50

    IXFH32N50Q equivalent

    Abstract: ixfk24n100 IXFD80N20Q-8X IXFN80N50 1672 mos-fet IXFH40N30
    Text: HiPerFETTM Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss trr max. Chip type Chip size dimensions Source ¬ bond wire recommend Equivalent device data sheet Dim. outline No. V Ω


    Original
    PDF IXFD50N20-7X IXFD50N20Q-7X IXFD80N20Q-8X IXFD90N20Q-8Y IXFD120N20-9X IXFD180N20-9Y IXFD60N25Q-8X IXFD100N25-9X IXFD40N30-7X IXFD40N30Q-7X IXFH32N50Q equivalent ixfk24n100 IXFN80N50 1672 mos-fet IXFH40N30

    Marking Code S72

    Abstract: mosfet 2n7002 S72 marking DIODE 30V transistor marking s72 2N7002 MARKING s72 2N7002 MARKING transistor s72 2N7002 code s72
    Text: 2N7002 N-Channel Enhancement-Mode MOSFET Voltage Range 60 Volts Current 230 mAmpere TO-236AB SOT-23 Features a a a a a a a 0.020(0.51) 0.015(0.37) Advanced trench process technology High density cell design for ultra-low on-resistance High input impedance


    Original
    PDF 2N7002 O-236AB OT-23) OT-23 45NCE 500mA Marking Code S72 mosfet 2n7002 S72 marking DIODE 30V transistor marking s72 2N7002 MARKING s72 2N7002 MARKING transistor s72 2N7002 code s72

    S72 FET

    Abstract: 2N7002 marking code 72 J Marking Code S72 S72 marking MOSFET dynamic S72 2n7002 s72 mosfet 2N7002 marking code 72 2N7002 mosfet s72
    Text: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA H C N TREENFET G TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration .016 (0.4) 0.037 (0.95) 0.037 (0.95) .045 (1.15)


    Original
    PDF 2N7002 230mA O-236AB OT-23) OT-23 S72 FET 2N7002 marking code 72 J Marking Code S72 S72 marking MOSFET dynamic S72 2n7002 s72 mosfet 2N7002 marking code 72 2N7002 mosfet s72

    2N7002 marking code 72

    Abstract: Marking Code S72 2N7002 MARKING s72 s72 mosfet S72 2n7002 2N7002 marking code 72 J
    Text: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) .016 (0.4) 0.035 (0.9) Pin Configuration 0.037 (0.95) 0.037 (0.95) .045 (1.15) .037 (0.95) .007 (0.175)


    Original
    PDF 2N7002 230mA O-236AB OT-23) OT-23 E8/10K 30K/box 30K/box 2N7002 marking code 72 Marking Code S72 2N7002 MARKING s72 s72 mosfet S72 2n7002 2N7002 marking code 72 J

    G3VM-355CR

    Abstract: 417 mosfet G3VM-355F mosfet 416 G3VM-355C G3VM-355FR G3VM relay CR 10
    Text: Omron A5 Catalogue 2006 295-430 14/10/05 10:09 am Page 416 MOSFET Relay – G3VM-355C/CR/F/FR New MOS FET Relay with Both SPST-NO and SPST-NC Contacts Incorporated in a Single DIP Package. General-purpose Series Added. • SPST-NO/SPST-NC models now included in


    Original
    PDF G3VM-355C/CR/F/FR G3VM-355C/CR G3VM-355F/FR G3VM-355CR/FR G3VM-355C/F G3VM-355CR 417 mosfet G3VM-355F mosfet 416 G3VM-355C G3VM-355FR G3VM relay CR 10

    2N7002

    Abstract: No abstract text available
    Text: SSM7002EN N-CHANNEL ENHANCEMENT-MODE MOSFET BV DSS CMOS logic compatible gate drive SOT-23 TO-263AB outline R DS(ON) D Small surface-mount package 60V 3Ω 230mA ID S SOT-23 Description G D Advanced MOSFETs from Silicon Standard use a "trench" process to


    Original
    PDF SSM7002EN OT-23 O-263AB) 230mA SSM7002EN 2N7002

    Untitled

    Abstract: No abstract text available
    Text: FMD 21-05QC FDM 21-05QC ID25 = 21 A = 500 V VDSS Ω RDSon typ. = 190 mΩ Q-Class Power MOSFETs Chopper Topologies in ISOPLUS i4-PACTM FMD FDM 3 3 Preliminary data 5 4 4 1 1 2 5 2 Features Symbol Conditions V DSS TVJ = 25°C to 150°C Maximum Ratings VGS


    Original
    PDF 21-05QC 21-05QC E72873

    TSP70

    Abstract: No abstract text available
    Text: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > MOSFETs Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series


    Original
    PDF TSP2305A TSP40GD120P TSP25G135T O-247 TSP25GD135T TSP25G135P TSP25GD135P TSP70

    UJT-2N2646 PIN DIAGRAM DETAILS

    Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
    Text: Motorola TVS/Zener Device Data Alphanumeric Index of Part Numbers 1 Cross Reference and Index 2 Selector Guide for Transient Voltage Suppressors and Zener Diodes 3 Transient Voltage Suppressors Axial Leaded Data Sheets 4 Transient Voltage Suppressors Surface Mounted Data Sheets


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBF170 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC)


    Original
    PDF MMBF170

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type P-Channel Enhancement Mode MOSFET BSS84 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features +0.1 1.3-0.1 +0.1 2.4-0.1 ● ID = -0.13 A 0.4 3 ● VDS V = -50V 1 0.55 ● RDS(ON) ≤ 10Ω (VGS = -5V) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1


    Original
    PDF BSS84 OT-23 -100mA

    Untitled

    Abstract: No abstract text available
    Text: MOSFET IC DIP Type SMD Type Type Product specification 2N7002E SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Low Input Capacitance 0.55 Low Gate Threshold Voltage +0.1 1.3-0.1 +0.1 2.4-0.1 Low On-Resistance: RDS ON 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original
    PDF 2N7002E OT-23 250mA 200mA

    417 TRANSISTOR

    Abstract: 2N7002E
    Text: MOSFET SMD Type N-Channel Enhanceent Mode Field Effect Transistor 2N7002E SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Low Input Capacitance 0.55 Low Gate Threshold Voltage +0.1 1.3-0.1 +0.1 2.4-0.1 Low On-Resistance: RDS ON 0.4 3 2 +0.1 0.95-0.1


    Original
    PDF 2N7002E OT-23 250mA 200mA 417 TRANSISTOR 2N7002E

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3415 P-Channel 20-V D-S MOSFET SOT-23-3L FEATURE Excellent RDS(ON), low gate charge,low gate voltages 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS Load switch and in PWM applicatopns


    Original
    PDF OT-23-3L CJK3415 OT-23-3L

    CHM6031LPAGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM6031LPAGP CURRENT 55 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE


    Original
    PDF CHM6031LPAGP O-252) CHM6031LPAGP

    channels 15 ampere mosfet

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM703ALPAPT CURRENT 40 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A


    Original
    PDF CHM703ALPAPT O-252A O-252A) channels 15 ampere mosfet

    CHM62A3PAPT

    Abstract: gs 069
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM62A3PAPT CURRENT 55 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A


    Original
    PDF CHM62A3PAPT O-252A O-252A) CHM62A3PAPT gs 069

    gs 069

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CHM50N06PAPT CURRENT 36 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A


    Original
    PDF CHM50N06PAPT O-252A O-252A) gs 069

    TC.. 12A MOSFET Drivers

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM71A3PAPT CURRENT 65 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A


    Original
    PDF CHM71A3PAPT O-252A O-252A) TC.. 12A MOSFET Drivers

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM634PAPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 250 Volts CURRENT 6.7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A


    Original
    PDF CHM634PAPT O-252A O-252A)

    SSS60N

    Abstract: sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830
    Text: MOSFETs FUNCTION GUIDE TO-220 FULL PACKAGE N-CHANNEL Part Number BV d ss V lo(on)(A) RDS(on)(Q) FWjc(KTW) PD(Watt) Page IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 50 13.00 14.00 20.00 28.00 30.00 36.00 0.100 0.084 0.050 0.028 0.024 0.018 4.16 4.00


    OCR Scan
    PDF O-220 IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 IRFSZ24 SSS15N06 IRFSZ34 SSS60N sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830

    POWER MOSFET 4600

    Abstract: MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90
    Text: HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode B Type " dbmm e«» m ax. m ax. m ax. Chip typ * Chip sue cHmehsfons Tm = 150°C V Q A 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.012 0.006 0.004 IXFD67N10-7X XFD75N10-7X


    OCR Scan
    PDF 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD67N10-7X XFD75N10-7X IXFD75N10Q-7X XFD80N100-8X XFD170N10-9X XFD230N10-9Y IXFD70N15-7X POWER MOSFET 4600 MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90