Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SSS50N05 Search Results

    SSS50N05 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SSS60N

    Abstract: sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830
    Text: MOSFETs FUNCTION GUIDE TO-220 FULL PACKAGE N-CHANNEL Part Number BV d ss V lo(on)(A) RDS(on)(Q) FWjc(KTW) PD(Watt) Page IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 50 13.00 14.00 20.00 28.00 30.00 36.00 0.100 0.084 0.050 0.028 0.024 0.018 4.16 4.00


    OCR Scan     		O-220 IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 IRFSZ24 SSS15N06 IRFSZ34 SSS60N sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830 PDF

    IRLSZ14

    Abstract: SSS50N06
    Text: FUNCTION GUIDE MOSFETs TO-220 N-CHANNEL LOGIC LEVEL FET (Continued) BVoss(V) lo(on)(A) Ros(on)(Q) FWjc(K/W) PofWatt) Page IRL510 IRL520 IRL530 IRL540 '0 0 4.00 7.90 13.00 24.00 0.750 0.400 0.200 0.110 5.00 3.00 1.70 1.00 25 42 75 125 872 877 882 887 IRL611


    OCR Scan     		O-220 IRL510 IRL520 IRL530 IRL540 IRL611 IRL621 IRL631 IRL641 IRL610 IRLSZ14 SSS50N06 PDF

    SSS50N06

    Abstract: AGSA 50 250M SSS50N05
    Text: N-CHANNEL POWER MOSFETS SSS50N06/05 FEATURES • Extremely Lower R d s o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		SSS50N06/05 O-220 SSS50N06 SSS50N05 O-220F AGSA 50 250M PDF