IRL510 Search Results

IRL510

Contextual Info: IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Available • Repetitive Avalanche Rated 0.54 RoHS* • Logic-Level Gate Drive

Contextual Info: IRL510 A d van ced Power MOSFET FEATURES - 100 V ^ D S o n = 0.44Ì2 BVDSS ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology CD LO Q II ♦ Rugged Gate Oxide Technology A ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area

Contextual Info: IRL510A Advanced Power MOSFET FEATURES B ^ dss - 100 V ♦ Avalanche Rugged Technology ^DS on = 0 .4 4 Q ♦ Rugged Gate Oxide Technology lD ♦ Logic-Level Gate Drive = 5.6 A ♦ Lower Input Capacitance ♦ Improved Gate Charge T O -2 2 0 ♦ Extended Safe Operating Area

IRL510PBF

Abstract: IRL510
Contextual Info: IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Available • Repetitive Avalanche Rated 0.54 RoHS* Qg (Max.) (nC) 6.1 • Logic-Level Gate Drive Qgs (nC) 2.6 • RDS(on) Specified at VGS = 4 V and 5 V

Contextual Info: IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Available • Repetitive Avalanche Rated 0.54 RoHS* Qg (Max.) (nC) 6.1 • Logic-Level Gate Drive Qgs (nC) 2.6 • RDS(on) Specified at VGS = 4 V and 5 V

Contextual Info: IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 5 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

Contextual Info: IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Available • Repetitive Avalanche Rated 0.54 RoHS* • Logic-Level Gate Drive

DIODE SMD 1 E 26

Abstract: SIHL510S
Contextual Info: IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

Contextual Info: PD - 95406 IRL510PbF • Lead-Free Document Number: 91297 6/17/04 www.vishay.com 1 IRL510PbF Document Number: 91297 www.vishay.com 2 IRL510PbF Document Number: 91297 www.vishay.com 3 IRL510PbF Document Number: 91297 www.vishay.com 4 IRL510PbF Document Number: 91297

Contextual Info: IRL510_RC, SiHL510_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRL510S_RC, SiHL510S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

IRL510

Contextual Info: IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Available • Repetitive Avalanche Rated 0.54 RoHS* • Logic-Level Gate Drive

IRL510

Abstract: IRL511 250M
Contextual Info: N-CHANNEL LOGIC LEVEL MOSFETS IRL510/511 FEATURES TO-220 • Lower R d s <on • Excellent voltage stability • Fast sw itching sp ee d s • R u gg e d polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

E200

Abstract: IRL510A
Contextual Info: IRL510A A d va n ce d Power MOSFET FEATURES B V DSS • ■ ■ ■ Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance ■ ■ ■ H Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 HA Max. @ VDS=100V

IRL510

Abstract: B250P IRL511
Contextual Info: N-CHANNEL LOGIC LEVEL MOSFET IRL510/IRL511 FEATURES TO-220 • Lower Ros ON • • • • • • • Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

SIHL510S

Contextual Info: IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

Contextual Info: IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 5 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

Contextual Info: IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 5 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

Contextual Info: $GYDQFHG 3RZHU 026 7 IRL510A FEATURES BVDSS = 100 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology RDS(on) = 0.44Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 5.6 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area

IRL510S

Abstract: 90380 SIHL510S
Contextual Info: IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

Contextual Info: MflSSMS2 0015332 330 M I N R International lj«R Rectifier _ IRL510S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • rU'y'yU Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive

Contextual Info: International S» Rectifier • PD-9.560C MÖS5M52 OülSflEb 00? ■ INR IRL510 INTERNATIONAL RECTIFIER HEXFET Power M O S FE T Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V g s = 4 V & 5 V 175°C Operating Temperature

IRL510S

Contextual Info: IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 5 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S S • Halogen-free According to IEC 61249-2-21

smd marking m11

Abstract: IRL510S SMD-220 A77 smd
Contextual Info: PD -9.907 International Rectifier IRL510S HEXFET Power MOSFET • • • • • • • S urface M ount A va ila b le in T ape & Reel D yn a m ic dv/dt R ating R epetitive A va la n ch e R ated L o gic-Level G ate Drive RDS on Sp e cifie d a t V g s =4V & 5V