IRL610
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRL610 FEATURES BVDSS = 200 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.046Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.3 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V
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IRL610
O-220
IRL610
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IRL610S
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRL610S FEATURES BVDSS = 200 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.5Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.3 A ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature
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IRL610S
IRL610S
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IRL610A
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRL610A FEATURES BVDSS = 200 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.046Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.3 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V
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IRL610A
O-220
IRL610A
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thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™
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FLMP SuperSOT-6
Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
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SC70-6
SC75-6
SuperSOTTM-3/SOT-23
Power247TM,
FLMP SuperSOT-6
Complementary MOSFETs buz11
FQD7P20
FDG6316
IRF650
FQP65N06
IRFS630
FDG329N
FDP2532
fqpf6n80
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FQPF*7N65C APPLICATIONS
Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM
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UF4003.
UF4004.
UF4005.
UF4006.
UF4007.
USB10H.
USB1T1102
USB1T11A.
vKA75420M
W005G
FQPF*7N65C APPLICATIONS
bc548 spice model
bf494 spice model
spice model bf199
LM3171
BC517 spice model
bc547 spice model
BF494 spice
MOC3043-M spice model
SPICE model BC237
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
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FQP630
Abstract: FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A
Text: Discrete MOSFET TO-220 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-220 N-Channel ISL9N302AP3 30 Single 0.0025 0.0033 - - 110 75 345 FDP8030L 30 Single 0.0035 0.0045
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O-220
O-220
ISL9N302AP3
FDP8030L
ISL9N303AP3
FDP7045L
ISL9N304AP3
FDP6676
FDP6670AL
SFP9Z24
FQP630
FQP27N25
FQP55N10
IRF630B
FQP630 equivalent
SFP9634
irf640b
FDP6035L
IRF620B
SSP7N60A
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IRL610A
Abstract: IRLS610A GS21
Text: IRLS610A Advanced Power MOSFET FEATURES BVDSS = 200 V ! Avalanche Rugged Technology RDS on = 0.046Ω ! Rugged Gate Oxide Technology ! Lower Input Capacitance ID = 2.5 A ! Improved Gate Charge ! Extended Safe Operating Area TO-220F ! Lower Leakage Current : 10 A (Max.) @ VDS = 200V
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IRLS610A
O-220F
IRL610A
IRLS610A
GS21
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Untitled
Abstract: No abstract text available
Text: IRL610A A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology CO CO o ♦ Lower Input Capacitance II ^D S o n = ♦ Rugged Gate Oxide Technology 200 V 0.046Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 200V
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IRL610A
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PDF
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Untitled
Abstract: No abstract text available
Text: IRL610 A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology CO CO o ♦ Lower Input Capacitance II ^D S o n = ♦ Rugged Gate Oxide Technology 200 V 0.046Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 200V
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IRL610
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PDF
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Untitled
Abstract: No abstract text available
Text: IRL610 A d van ced Power MOSFET FEATURES BVdss = 200 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD = 0.046Q 3.3 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -2 2 0 ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 200V
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IRL610
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IRF MOSFET 100A 200v
Abstract: IRL610A
Text: IRL610A A dvanced Power MOSFET FEATURES B V DSS — 2 0 0 V ♦ Avalanche Rugged Technology II D ♦ Lower Input Capacitance 00 00 ^DS on = ♦ Rugged Gate Oxide Technology 0 .0 4 6 Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 200V
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IRL610A
185fi
IRF MOSFET 100A 200v
IRL610A
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Untitled
Abstract: No abstract text available
Text: IRL610S Advanced Power MOSFET FEATURES B^DSS - ♦ Avalanche Rugged Technology CO a II ♦ Lower Input Capacitance CO ^ D S o n = ♦ Rugged Gate Oxide Technology 200 V 1.5Q A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ 150°C Operating Temperature
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IRL610S
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ld33a
Abstract: IRL610A
Text: IRL610A Advanced Power MOSFET FEATURES • BVdss = 200 V Logic-Level Gate Drive Rds oii = 1-5 £2 ■ Avalanche Rugged Technology ■ ■ Rugged Gate Oxide Technology Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area lD = 3.3 A
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IRL610A
O-220
D3T14D
Q1591
30-OTO
T0-220
QQ3b32fl
500MIN
7Tb414E
ld33a
IRL610A
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IRL610S
Abstract: IRF MOSFET 100A 200v
Text: IRL610S A dvanced Power MOSFET FEATURES B V DSS — 2 0 0 V ♦ Avalanche Rugged Technology II D ♦ Lower Input Capacitance CO CO ^DS on = ♦ Rugged Gate Oxide Technology 1 .5 Î 2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature
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IRL610S
IRL610S
IRF MOSFET 100A 200v
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL LOGIC LEVEL MOSFET IRL610/IRL611 FEATURES • Lower R d s ON • • • • • • • Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRL610/IRL611
O-220
IRL610
IRL611
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Untitled
Abstract: No abstract text available
Text: IRL610A A d van ced Power MOSFET FEATURES BVdss = 200 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD = 0.046Q 3.3 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -2 2 0 ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 200V
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IRL610A
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IRL610
Abstract: IRL611
Text: N-CHANNEL LOGIC LEVEL MOSFETS IRL610/611 FEATURES • • • • • • • • Lower Rds ON Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRL610/611
O-220
IRL610
IRL611
7Tb414E
DD5T434
IRL610/611
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Untitled
Abstract: No abstract text available
Text: IRL610S A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 1 .5 0 . o ♦ Lower Input Capacitance II ♦ Rugged Gate Oxide Technology CO CO ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature
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IRL610S
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IRF MOSFET 100A 200v
Abstract: IRL610
Text: IRL610 A dvanced Power MOSFET FEATURES B V DSS — 2 0 0 V ♦ Avalanche Rugged Technology II D ♦ Lower Input Capacitance 00 00 ^DS on = ♦ Rugged Gate Oxide Technology 0 .0 4 6 Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 200V
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IRL610
185fi
25ated
IRF MOSFET 100A 200v
IRL610
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irf1740
Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
Text: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040
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SSR3055A
IRFR014A
IRFR024A
IRFR034A
IRFR110A
IRFR120A
IRFR130A
IRFR210A
IRFR220A
IRFR230A
irf1740
IRL244
IRF1740A
ks 0550
IRL244A
IRFZ34A
SSH6N80A
IRF634A
irfs750
IRFS640
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IRLZ14
Abstract: IRLZ24 50N05l irl530 IRL511
Text: FUNCTION GUIDE POWER MOSFETs LOGIC LEVEL SFET TO-220 N-CHANNEL BVdss V ID(on)(A) RDS(on)( Q) Part Number 50.00 8.00 15.00 25.00 35.00 50.00 0.30 0.15 0.07 0.04 0.022 IRLZ10 IRLZ20 IRLZ30 IR LZ 40 SSP 50N 05L 60.00 8.00 15.00 25.00 35.00 50.00 0.30 0.15 0.07
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O-220
IRLZ10
IRLZ20
IRLZ30
IRLZ14
IRLZ24
IRLZ34
IRLZ44
SP50N
IRL511
50N05l
irl530
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Irf640 irf9540
Abstract: IRFR220TF IRF510 mosfet irf640 451 MOSFET KSP44 IRFR9120-TF STR 456 2n3904 2n3906 KST2222ATF IRFR120TF
Text: PRODUCT INDEX ALPHA NUMERIC INDEX Power MOSFET S/STR Standard MOSFET PART NO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907A-TF KST3904-TF KST3906-TF
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2N3904
2N3906
2N4401
2N4403
2N5087
2N5088
2N5551
2N6515
KSP06
KSP10
Irf640 irf9540
IRFR220TF
IRF510 mosfet irf640
451 MOSFET
KSP44
IRFR9120-TF
STR 456
2n3904 2n3906
KST2222ATF
IRFR120TF
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