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    418B Search Results

    418B Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TPS78418BQWDRBRQ1 Texas Instruments Automotive, 300-mA, low-IQ, high-PSRR, LDO voltage regulator with high accuracy and enable 8-SON -40 to 150 Visit Texas Instruments
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    418B Price and Stock

    Analog Devices Inc AD8418BRMZ

    IC CURRENT SENSE 1 CIRCUIT 8MSOP
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    DigiKey AD8418BRMZ Tube 3,470 1
    • 1 $4.23
    • 10 $2.792
    • 100 $1.9994
    • 1000 $1.56838
    • 10000 $1.3913
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    Mouser Electronics AD8418BRMZ 4,055
    • 1 $2.94
    • 10 $2.42
    • 100 $1.99
    • 1000 $1.55
    • 10000 $1.39
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    Newark AD8418BRMZ Bulk 159 1
    • 1 $2.94
    • 10 $2.5
    • 100 $2.16
    • 1000 $1.84
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    Analog Devices Inc AD8418BRMZ 694
    • 1 $4.23
    • 10 $2.792
    • 100 $1.9994
    • 1000 $1.56838
    • 10000 $1.3913
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    Win Source Electronics AD8418BRMZ 28,959
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    • 100 $1.7975
    • 1000 $1.5076
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    Analog Devices Inc AD8418BRMZ-RL

    IC CURRENT SENSE 1 CIRCUIT 8MSOP
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    DigiKey AD8418BRMZ-RL Reel 3,000 3,000
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    Mouser Electronics AD8418BRMZ-RL 3,179
    • 1 $3.59
    • 10 $2.27
    • 100 $1.93
    • 1000 $1.56
    • 10000 $1.43
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    Newark AD8418BRMZ-RL Cut Tape 4,310 1
    • 1 $3.36
    • 10 $2.42
    • 100 $2
    • 1000 $1.57
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    Analog Devices Inc AD8418BRMZ-RL 755 1
    • 1 $4.23
    • 10 $2.792
    • 100 $1.9994
    • 1000 $1.56838
    • 10000 $1.37566
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    Win Source Electronics AD8418BRMZ-RL 28,950
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    • 100 $1.7223
    • 1000 $1.4763
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    Belden Inc DT-04-18-BL-C

    CBL TIE LOCKING BLUE 18LB 4.12"
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    DigiKey DT-04-18-BL-C Bag 2,000 100
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    Newark DT-04-18-BL-C Bulk 1,000 1
    • 1 $0.005
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    Vishay Siliconix DG418BDY-T1-E3

    IC SWITCH SPST-NOX1 25OHM 8SOIC
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    DigiKey DG418BDY-T1-E3 Digi-Reel 1,258 1
    • 1 $2.85
    • 10 $2.127
    • 100 $1.749
    • 1000 $1.55071
    • 10000 $1.55071
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    DG418BDY-T1-E3 Cut Tape 1,258 1
    • 1 $2.85
    • 10 $2.127
    • 100 $1.749
    • 1000 $1.55071
    • 10000 $1.55071
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    Molex 0845240014-18-B7

    18" PRE-CRIMP A1858/19 BLACK
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    DigiKey 0845240014-18-B7 Bulk 420 10
    • 1 -
    • 10 $1.071
    • 100 $0.8923
    • 1000 $0.8923
    • 10000 $0.8923
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    418B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DG417B

    Abstract: DG417BDJ DG418B DG418BDJ DG419B 418B
    Text: DG417B/418B/419B Vishay Siliconix Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION FEATURES The DG417B/418B/419B monolithic CMOS analog switches were designed to provide high performance switching of analog signals. Combining low power, low leakages, high


    Original     		PDF DG417B/418B/419B DG417B/418B/419B DG417B DG419B, 08-Apr-05 DG417BDJ DG418B DG418BDJ DG419B 418B

    Untitled

    Abstract: No abstract text available
    Text: 418B Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current25 @Temp (øC) (Test Condition)145# V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)25 @Temp. (øC) (Test Condition)25#


    Original     		PDF Current25 Voltage100

    418B-04

    Abstract: marking 5M
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D 2 PAK CASE 418B–04 ISSUE G SCALE 1:1 DATE 07/09/2001 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. C E V


    Original     		PDF 418B-01 418B-03 418B-04. 418B-04 marking 5M

    418B

    Abstract: 15-V DG417B DG417BDJ DG417BDY DG418B DG418BDJ DG419B DG419BDQ
    Text: DG417B/418B/419B New Product Vishay Siliconix Precision CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D "15-V Analog Signal Range On-Resistance—rDS on : 15 W Fast Switching Action—tON: 100 ns TTL and CMOS Compatible


    Original     		PDF DG417B/418B/419B DG417B/418B/419B S-31538--Rev. 11-Aug-03 DG417B/418B HP4192A DG419B 418B 15-V DG417B DG417BDJ DG417BDY DG418B DG418BDJ DG419B DG419BDQ

    418B-04

    Abstract: 418B 98AS AYWW marking code IC 98ASB42761B 418B-03 marking code AYWW On semiconductor date Code d2pak
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K DATE 03 SEP 2008 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04.


    Original     		PDF 418B-04 418B-01 418B-03 418B-04. 418B-04 418B 98AS AYWW marking code IC 98ASB42761B marking code AYWW On semiconductor date Code d2pak

    V02 MSOP-8

    Abstract: 418B
    Text: DG417B/418B/419B New Product Vishay Siliconix Precision CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D "15-V Analog Signal Range On-Resistance—rDS on : 15 W Fast Switching Action—tON: 100 ns TTL and CMOS Compatible


    Original     		PDF DG417B/418B/419B DG417B/418B/419B 08-Apr-05 V02 MSOP-8 418B

    418B

    Abstract: No abstract text available
    Text: DG417B/418B/419B Vishay Siliconix Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION FEATURES The DG417B/418B/419B monolithic CMOS analog switches were designed to provide high performance switching of analog signals. Combining low power, low leakages, high


    Original     		PDF DG417B/418B/419B DG417B/418B/419B DG417B DG419B, 18-Jul-08 418B

    418B

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK CASE 418B–03 ISSUE D DATE 01/02/2000 SCALE 1:1 C E V –B– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 A 1 2 S 3 –T– SEATING PLANE DIM A B C D E G


    Original     		PDF

    418B-01

    Abstract: 418B-04 98ASB42761B
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D 2 PAK CASE 418B-04 ISSUE H DATE 13 JAN 2003 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. C SCALE 1:1 E V W


    Original     		PDF 418B-04 418B-01 418B-03 418B-04. 418B-04 98ASB42761B

    Untitled

    Abstract: No abstract text available
    Text: DG417B/418B/419B New Product Vishay Siliconix Precision CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D "15-V Analog Signal Range On-Resistance—r DS on : 15 W Fast Switching Action—tON: 100 ns TTL and CMOS Compatible


    Original     		PDF DG417B/418B/419B DG417B/418B/419B DG419B) S-03010--Rev. 20-Jan-03 DG417B/418B HP4192A DG419B

    b2545g

    Abstract: B2545 AKA b2545 B2545G diode b2545g aka B2545 M 418B-04 SBRB2545CTG SBRB2545 PPAP MANUAL for automotive industry
    Text: MBRB2545CTG, SBRB2545CTG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. Features • 


    Original     		PDF MBRB2545CTG, SBRB2545CTG O-220 AEC-Q101 MBRB2545CT/D b2545g B2545 AKA b2545 B2545G diode b2545g aka B2545 M 418B-04 SBRB2545CTG SBRB2545 PPAP MANUAL for automotive industry

    TS20100CG

    Abstract: ntsj20100ctg ntsj2010 ntsj20100 NTSB20100CT
    Text: NTST20100CT, NTSB20100CT-1G, NTSJ20100CTG, NTSB20100CTG Very Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com PIN CONNECTIONS 1 Exceptionally Low VF = 0.50 V at IF = 5 A 2, 4 3 Features • Fine Lithography Trench−based Schottky Technology for Very Low


    Original     		PDF NTST20100CT, NTSB20100CT-1G, NTSJ20100CTG, NTSB20100CTG O-220AB NTST20100CT/D TS20100CG ntsj20100ctg ntsj2010 ntsj20100 NTSB20100CT

    B4030 AKA

    Abstract: B4030G 838 ir NRVBB4030 B4030
    Text: MBRB4030G, NRVBB4030T4G Preferred Device SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features •       Guardring for Stress Protection Maximum Die Size


    Original     		PDF MBRB4030G, NRVBB4030T4G AEC-Q101 MBRB4030/D B4030 AKA B4030G 838 ir NRVBB4030 B4030

    B20100G

    Abstract: B20100G diode AKA B20100G AKA B20100 B20100G on aka B20100G AKA B20100G diode AKA b20100 mbrb20100ctg b20100 g
    Text: MBRB20100CTG, NRVBB20100CTT4G, NRVBBS20100CTT4G SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal.


    Original     		PDF MBRB20100CTG, NRVBB20100CTT4G, NRVBBS20100CTT4G O-220 AEC-Q101 MBRB20100CT/D B20100G B20100G diode AKA B20100G AKA B20100 B20100G on aka B20100G AKA B20100G diode AKA b20100 mbrb20100ctg b20100 g

    AN569

    Abstract: MTB30P06V MTB30P06VT4
    Text: MTB30P06V Preferred Device Power MOSFET 30 Amps, 60 Volts P–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTB30P06V r14525 MTB30P06V/D AN569 MTB30P06V MTB30P06VT4

    Untitled

    Abstract: No abstract text available
    Text: MURHB860CT Preferred Device MEGAHERTZ Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: • • • • •


    Original     		PDF MURHB860CT

    NTB6413AN

    Abstract: No abstract text available
    Text: NTB6413AN, NTP6413AN N-Channel Power MOSFET 100 V, 42 A, 28 mW Features • • • • Low RDS on High Current Capability 100% Avalanche Tested These are Pb−Free Devices http://onsemi.com V(BR)DSS MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)


    Original     		PDF NTB6413AN, NTP6413AN NTB6413AN/D NTB6413AN

    AN569

    Abstract: MTB60N05HD MTB60N05HDL MTB60N05HDT4 SMD310
    Text: MTB60N05HDL Preferred Device Power MOSFET 60 Amps, 50 Volts, Logic Level N–Channel D2PAK The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with


    Original     		PDF MTB60N05HDL r14525 MTB60N05HDL/D AN569 MTB60N05HD MTB60N05HDL MTB60N05HDT4 SMD310

    T23N03

    Abstract: NTB23N03R NTB23N03RT4 Code N03
    Text: NTB23N03R Power MOSFET 23 Amps, 25 Volts N-Channel D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications • • • • • http://onsemi.com 23 AMPERES, 25 VOLTS


    Original     		PDF NTB23N03R NTB23N03R/D T23N03 NTB23N03R NTB23N03RT4 Code N03

    AN569

    Abstract: MTB9N25E SMD310
    Text: MOTOROLA Order this document by MTB9N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB9N25E Motorola Preferred Device TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS on = 0.45 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTB9N25E/D MTB9N25E MTB9N25E/D* AN569 MTB9N25E SMD310

    AN569

    Abstract: MTB2N60E SMD310
    Text: MOTOROLA Order this document by MTB2N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB2N60E Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS on = 3.8 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTB2N60E/D MTB2N60E AN569 MTB2N60E SMD310

    AN569

    Abstract: MTB3N100E SMD310 LS 1316
    Text: MOTOROLA Order this document by MTB3N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB3N100E Motorola Preferred Device TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS on = 4.0 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		PDF MTB3N100E/D MTB3N100E MTB3N100E/D* AN569 MTB3N100E SMD310 LS 1316

    M50P03HDL

    Abstract: m50p03 AN569 MTB50P03HDL MTB50P03HDLT4
    Text: MTB50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for


    Original     		PDF MTB50P03HDL r14525 MTB50P03HDL/D M50P03HDL m50p03 AN569 MTB50P03HDL MTB50P03HDLT4

    TB20N20E

    Abstract: MTP30N08M MTD5N08L MTD1N50 MTP40N06M TB20N20 MTP10N10M
    Text: G CASE 314B-02 5 PIN TO-220 S DRAIN CASE 418B-01 o TMOS SENSEFETs D2PAK* SE N S E FE Ts are con ven tion al pow er M O SFETs w ith an option provided to sen se the drain current by m ea surin g a sm all proportion of the total drain Table 11 — Case 418B-01


    OCR Scan     		PDF 314B-02 O-220) 418B-01 MTB8N50E TB10N40E TB20N20E TB33N10E TB15N06E TB30N06EL MTP30N08M MTD5N08L MTD1N50 MTP40N06M TB20N20 MTP10N10M