Untitled
Abstract: No abstract text available
Text: CAMBION Wearnes Cambion LTD Castleton, Hope Valley, Derbyshire, S33 8WR, England Telephone: +44 0 1433 621555 Fax: +44(0)1433 621290 Web: www.cambion.com Email: enquiries@cambion.com Technical Data Sheet 450-4355 Teflon Insulated, press mount socket, for .080 (2,03) diameter pins
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450-4355-01-03-XX
con80
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450-4355-01-03-XX
Abstract: No abstract text available
Text: CAMBION Wearnes Cambion LTD â Castleton, Hope Valley, Derbyshire, S33 8WR, England Telephone: +44 0 1433 621555 Fax: +44(0)1433 621290 Web: www.cambion.com Email: enquiries@cambion.com Technical Data Sheet 450-4355-01-03-XX Insulated, press mount, one piece socket, for .080 (2,03)
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450-4355-01-03-XX
450-4355-01-03-XX
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package E BC General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage Collector Base Voltage
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PN4354
PN4355
PN4356
C-120
PN4354
56REV081001
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PN4355
Abstract: PN4356 PN4354
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package E BC General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage Collector Base Voltage
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ISO/TS16949
PN4354
PN4355
PN4356
C-120
PN4354
56REV081001
PN4355
PN4356
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4355 data sheet
Abstract: PN4354 PN4355 PN4356
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage
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PN4354
PN4355
PN4356
C-120
PN4354
56REV081001
4355 data sheet
PN4355
PN4356
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PN4354
Abstract: PN4355 PN4356
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN4354 PN4355 PN4356 TO-92 Plastic Package E BC General Purpose Amplifiers DESCRIPTION Collector Emitter Voltage Collector Base Voltage
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PN4354
PN4355
PN4356
C-120
PN4354
56REV081001
PN4355
PN4356
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500kh
Abstract: FP1308R REGULATORS S 812
Text: High Current, High Frequency, Power Inductors FLAT-PAC FP1308R Series Applications • • • • • • • • SMD Device HF FREE Environmental Data • Storage temperature range: -40°C to +125°C • Operating temperature range: -40°C to +125°C
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FP1308R
J-STD-020D
BU-SB08890
500kh
REGULATORS S 812
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Untitled
Abstract: No abstract text available
Text: HALOGEN High Current, High Frequency, Power Inductors HF Pb FREE FLAT-PAC FP1308R Series Applications • • • • • • • • SMD Device Environmental Data • Storage temperature range: -40°C to +125°C • Operating temperature range: -40°C to +125°C
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FP1308R
110nH
440nH
BU-SB12178
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8290s
Abstract: No abstract text available
Text: SPICE Device Model Si4170DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4170DY
S-81900Rev.
25-Aug-08
8290s
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4405 mosfet
Abstract: mosfet 4405 a6529 4405 n channel mosfet
Text: SPICE Device Model Si7798DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si7798DP
S-82025-Rev.
01-Sep-08
4405 mosfet
mosfet 4405
a6529
4405 n channel mosfet
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S-82025
Abstract: si7798 64055
Text: SPICE Device Model Si7798DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si7798DP
18-Jul-08
S-82025
si7798
64055
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Si4126DY
Abstract: S-81748 mosfet 4405
Text: SPICE Device Model Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4126DY
18-Jul-08
S-81748
mosfet 4405
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8290s
Abstract: No abstract text available
Text: SPICE Device Model Si4170DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4170DY
18-Jul-08
8290s
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MOS 4362
Abstract: Si7170DP MOSfet 4362 SI7170 S-80758
Text: SPICE Device Model Si7170DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7170DP
18-Jul-08
MOS 4362
MOSfet 4362
SI7170
S-80758
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48V battery
Abstract: DN444 FDS3672 48v linear power supply LTC4355 BAS21 LTC4354 TA06
Text: Ideal Diodes Protect Against Power Supply Wiring Errors Design Note 444 Meilissa Lum Introduction High availability systems often employ dual feed power distribution to achieve redundancy and enhance system reliability. ORing diodes join the feeds together at the
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LTC4355
LTC4354
LTC4354
LTC4355
dn444
48V battery
FDS3672
48v linear power supply
BAS21
TA06
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datasheet irfp450 mosfet
Abstract: rectifier d 355 n 2000 IRFP450 TA17435 TB334
Text: IRFP450 Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP450 • 14A, 500V • rDS ON = 0.400Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds
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IRFP450
TB334
O-247
datasheet irfp450 mosfet
rectifier d 355 n 2000
IRFP450
TA17435
TB334
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40.4355
Abstract: pressure to current converter Ub-12V 4355-420/jumo pressure jumo pressure piezoresistive pressure transmitter diaphragm pressure Pressure Transmitter jumo jumo DIN43650
Text: M. K. JUCHHEIM GmbH & Co 3 6 0 3 5 Fu lda, G erm an y Phone Fax Telex email 0661 6003-0 (0661)6003-607 4 9 701 ju fd JUMO_de@e-mall.com For United Kingdom: For USA: Jum o In strum ent Co. Ltd. Jum o Process Control Inc. Temple Bank, Riverway, Harlow, Essex CM20 2TT
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4-20mA
40.4355
pressure to current converter
Ub-12V
4355-420/jumo pressure
jumo pressure
piezoresistive pressure transmitter
diaphragm pressure
Pressure Transmitter jumo
jumo
DIN43650
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74290 Decade Counter
Abstract: 74290 Counter
Text: 290 CONNECTION DIAGRAM P IN O U T A 34 / ¡4/74290 ° l 00 54LS/74LS290 o / o c ^ BCD DECADE COUNTER DESCRIPTION— The ’290 is a 4-stage ripple counter containing a hrgb speed flip-flop acting as a divide-by-tw o and three flip-flops connected as a divide-by-five. HIGH sign als on the Master Reset MR inputs override the
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54LS/74LS290
54/74LS
74290 Decade Counter
74290 Counter
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74290
Abstract: 74290 Decade Counter 74290 Counter 74290PC 54LS290DM
Text: NATIONAL SEMICOND -CLOGIO DEE D I b S D U E E -T- 0 D b 3 cJòti t. I V5-23-/3 290 C O N N ECTIO N DIAGRAM PINOUT A 54/74290 54LS/74LS290 BCD DECADE COUNTER MS [7 i n vcc N C [T T51 MR [T 12] MR m s 02 E TT]c p i Qi jT ]0 CPo n c D ESCRIPTIO N — The '290 is a 4-stage ripple counter containing a high
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V5-23-/3
54LS/74LS290
54/74LS
74290
74290 Decade Counter
74290 Counter
74290PC
54LS290DM
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Untitled
Abstract: No abstract text available
Text: IRFP450 S e m iconductor Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 14A ,500V Ordering Information • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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IRFP450
O-247
400i2
TB334
TA17435.
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ITT 435-1
Abstract: No abstract text available
Text: S iW H S electronic June 1992 HM 65798 HI-REL DATA SHEET_ 64 k x 4 HIGH SPEED CMOS SRAM FEATURES . TTL COMPATIBLE INPUTS AND OUTPUTS • FAST ACCESS TIME : 25*/35/45/55 ns . LOW POWER CONSUMPTION ACTIVE: 660 mW STANDBY : 190 mW . WIDE TEMPERATURE RANGE : - 55°C TO + 125°C
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10VJ
Abstract: IRFP450 TA17435 TB334
Text: IRFP450 Semiconductor Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 14A, 500V • rDS ON = 0.40062 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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PDF
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IRFP450
TA17435.
IRFP450
O-247
10VJ
TA17435
TB334
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Untitled
Abstract: No abstract text available
Text: s Provisional Data Sheet No. PD-9.1398A International IOR Rectifier IRHNA7360SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D 400 Volt, 0.200, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology
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IRHNA7360SE
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74290 Counter
Abstract: 74290 Decade Counter 74290 MQ3 circuit diagram 74LS290PC 54LS290DM 74290DC 54290DM 54290FM 54LS290FM
Text: 290 C O N N E C T IO N D IA G R A M P IN O U T A '^4/74290 ° 54LS/74LS290 t b ° 0/0o^>^> BCD DECADE COUNTER MS [7 Î 4 I V cc NC |T Î 3 I MB ms [7 T i l MR q 2 [T T Ï] CPi [T To] c p o Qi D E S C R IP T IO N — T h e ’290 is a 4 -sta g e rip p le c o u n te r c o n ta in in g a hrgb
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54LS/74LS290
54/74LS
74290 Counter
74290 Decade Counter
74290
MQ3 circuit diagram
74LS290PC
54LS290DM
74290DC
54290DM
54290FM
54LS290FM
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