4405 mosfet
Abstract: mosfet 4405 a6529 4405 n channel mosfet
Text: SPICE Device Model Si7798DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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PDF
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Si7798DP
S-82025-Rev.
01-Sep-08
4405 mosfet
mosfet 4405
a6529
4405 n channel mosfet
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circuit 4466
Abstract: AN609
Text: Si7798DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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PDF
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Si7798DP
AN609
11-Apr-08
circuit 4466
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S-82025
Abstract: si7798 64055
Text: SPICE Device Model Si7798DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Original
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PDF
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Si7798DP
18-Jul-08
S-82025
si7798
64055
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