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    4416 Search Results

    4416 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LTC4416EMS-1#PBF Analog Devices 36V, L Loss 2x PwrPath Cntrs f Visit Analog Devices Buy
    LTC4416EMS-1#TRPBF Analog Devices 36V, L Loss 2x PwrPath Cntrs f Visit Analog Devices Buy
    LTC4416EMS#PBF Analog Devices 36V, L Loss 2x PwrPath Cntrs f Visit Analog Devices Buy
    LTC4416IMS-1#PBF Analog Devices 36V, L Loss 2x PwrPath Cntrs f Visit Analog Devices Buy
    LTC4416IMS-1#TRPBF Analog Devices 36V, L Loss 2x PwrPath Cntrs f Visit Analog Devices Buy
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    4416 Price and Stock

    TE Connectivity 1-1564416-1

    CONN PLUG HSG 8POS 4.00MM
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    DigiKey 1-1564416-1 Bulk 4,206 1
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    Interstate Connecting Components 1-1564416-1 175
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    Powell Electronics 1-1564416-1 22 1
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    Chip 1 Exchange 1-1564416-1 2,765
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    Master Electronics 1-1564416-1
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    TE Connectivity 3-1744163-4

    CONN HEADER SMD 4POS 2.54MM
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    DigiKey 3-1744163-4 Reel 1,575 225
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    TE Connectivity 1744416-9

    CONN RCPT HSG 9POS 3.96MM
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    DigiKey 1744416-9 Bulk 1,123 1
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    Avnet Americas 1744416-9 Bag 16 Weeks, 2 Days 3,000
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    TME 1744416-9 13,000 100
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    Interstate Connecting Components 1744416-9
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    Master Electronics 1744416-9 23,000
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    Mercury Electronic Ind Co Ltd 3QHTF32-12.4416-PD

    12.4416 MHz XO 3.3V 3.2X2.5MM PD
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    DigiKey 3QHTF32-12.4416-PD 250 5
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    Mercury Electronic Ind Co Ltd 3QHTF32-124.416-OE

    124.416 MHz XO 3.3V 3.2X2.5MM OE
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    DigiKey 3QHTF32-124.416-OE 250 5
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    4416 Datasheets (214)

    Part ECAD Model Manufacturer Description Curated Type PDF
    4416 3M Uncategorized - Miscellaneous - SCOTCHCAST DUCT SEALING KIT Original PDF
    4416 Pomona Box Components, Boxes, Enclosures, Racks, REPLACEMENT COVER "E" ALUM BOX Original PDF
    4416 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    441600000 Weidmuller Connectors, Interconnects - Terminal Blocks - Accessories - Jumpers - JUMPER TERM BLK 4POS LINK Original PDF
    441612FX Lapp Group Connector: Circular Connector: F: 12 Original PDF
    441622FX Lapp Group Connector: Circular Connector: F: 9 Original PDF
    441650FX Lapp Group Connector: Circular Connector: F: 7 Original PDF
    441670001 Molex Connectors, Interconnects - Blade Type Power Connectors - Housings - CONN HSG RCPT 6POS 5.59MM NAT Original PDF
    4416B R&E International CMOS QUAD ANALOG SWIITCH Scan PDF
    4416B-1"X36YD 3M Bonding Systems Tape, Tapes, Adhesives, TAPE VINYL FOAM 1/16" X 1" Original PDF
    4416B-1/2"X36YD 3M Bonding Systems Tape, Tapes, Adhesives, TAPE VINYL FOAM 1/16 X 1/2" BLK Original PDF
    4416B-1/2""X36YD 3M Interconnect TAPE DBL COATED BLK 1/2""X 36YDS Original PDF
    4416B-1/4"X36YD 3M Bonding Systems Tape, Tapes, Adhesives, TAPE VINYL FOAM 1/16 X 1/4" BLK Original PDF
    4416B-1/4""X36YD 3M Interconnect TAPE DBL COATED BLK 1/4""X 36YDS Original PDF
    4416B-1.5"X36YD 3M Bonding Systems Tape, Tapes, Adhesives, TAPE VINYL FOAM 1/16 X 1.5" BLK Original PDF
    4416B-1.5""X36YD 3M Interconnect TAPE DBL COATED BLK 1 1/2""X 36YD Original PDF
    4416B-1""X36YD 3M Interconnect TAPE DBL COATED BLACK 1""X 36YDS Original PDF
    4416B-2"X36YD 3M Bonding Systems Tape, Tapes, Adhesives, TAPE VINYL FOAM 1/16 X 2" BLK Original PDF
    4416B-2""X36YD 3M Interconnect TAPE DBL COATED BLACK 2""X 36YDS Original PDF
    4416B-3/4"X36YD 3M Bonding Systems Tape, Tapes, Adhesives, TAPE VINYL FOAM 1/16 X 3/4" BLK Original PDF
    ...

    4416 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MATERIAL DECLARATION SHEET Material # Model 4416T-L Product Line Networks Date 02-January-2005 RoHS Compliant Yes No. 1 2 3 4 Construction Element Element Material Group Material Weight [g] Materials Ceramic Conductor Ink Glaze 0.14324 0.000026 0.000013 0.000037


    Original
    PDF 4416T-L 02-January-2005 Materi07

    4416P-LF

    Abstract: 4416plf 4416pl
    Text: MATERIAL DECLARATION SHEET Material # 4416P-LF Series Product Line Networks Date 05/13/2005 RoHS Compliant Yes No. 1 2 3 4 Construction Element Element Material Group Material Weight [g] Materials Ceramic Conductor Ink Glaze 0.14324 0.00048 0.00027 0.00002


    Original
    PDF 4416P-LF 4416plf 4416pl

    4416B

    Abstract: EJ21 4416BM1 microdot 10-32 EHM1159 BATTERY CHARGER cutoff endevco
    Text: Model 4416B Battery powered Isotron conditioner Features Description • Low noise operation • Portable compact size • Selectable gain of 1 or 10 • Status indicator LED • Operational during battery recharge cycle • Eight hours of continuous battery operation


    Original
    PDF 4416B 4416B Ca92675 EJ21 4416BM1 microdot 10-32 EHM1159 BATTERY CHARGER cutoff endevco

    NEC UPD44164182

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ44164082, 44164182, 44164362 18M-BIT CMOS SYNCHRONOUS FAST SRAM DOUBLE DATA RATE 2-WORD BURST OPERATION Description The µ44164082 is a 2,097,152-word by 8-bit, the µ44164182 is a 1,048,576-word by 18-bit and the µ44164362


    Original
    PDF PD44164082, 18M-BIT PD44164082 152-word PD44164182 576-word 18-bit PD44164362 288-word 36-bit NEC UPD44164182

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ44164084, 44164184, 44164364 18M-BIT DDRII SRAM 4-WORD BURST OPERATION Description The µ44164084 is a 2,097,152-word by 8-bit, the µ44164184 is a 1,048,576-word by 18-bit and the µ44164364 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS


    Original
    PDF PD44164084, 18M-BIT PD44164084 152-word PD44164184 576-word 18-bit PD44164364 288-word 36-bit

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µ44165082 is a 2,097,152-word by 8-bit, the µ44165182 is a 1,048,576-word by 18-bit and the µ44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS


    Original
    PDF PD44165082, 18M-BIT PD44165082 152-word PD44165182 576-word 18-bit PD44165362 288-word 36-bit

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ44164085, 44164185, 44164365 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The µ44164085 is a 2,097,152-word by 8-bit, the µ44164185 is a 1,048,576-word by 18-bit and the µ44164365 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS


    Original
    PDF PD44164085, 18M-BIT PD44164085 152-word PD44164185 576-word 18-bit PD44164365 288-word 36-bit

    C3225

    Abstract: C5750X7R1H225M
    Text: 4416_C3225 1/3 C Series Ceramic Capacitors For Smoothing SMD FEATURES • Providing capacitance values in the range of electrolytic types and long service life, this product is recommended for highreliability power supply applications. • Low ESR and excellent frequency characteristics make this


    Original
    PDF C3225 C5750X7R1E685K C5750X7R1E685M C5750X7R1E106K C5750X7R1E106M C5750X7R1E156K C5750X7R1E156M C4532X7R1C106M C4532Y5U1C156M C5750X7R1C156K C3225 C5750X7R1H225M

    C5750X7R1H475M

    Abstract: No abstract text available
    Text: 4416_C3225 1/4 C Series Ceramic Capacitors For Smoothing SMD FEATURES • Providing capacitance values in the range of electrolytic types and long service life, this product is recommended for highreliability power supply applications. • Low ESR and excellent frequency characteristics make this


    Original
    PDF C3225 C4532JE1C156M C4532JB1C106M C4532Y5U1C156M C4532X7R1C106M C4532X7R1C106M C3225 C5750X7R1H475M

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µ44165082 is a 2,097,152-word by 8-bit, the µ44165182 is a 1,048,576-word by 18-bit and the µ44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full


    Original
    PDF PD44165082, 18M-BIT PD44165082 152-word PD44165182 576-word 18-bit PD44165362 288-word 36-bit

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ44164085, 44164185, 44164365 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The µ44164085 is a 2,097,152-word by 8-bit, the µ44164185 is a 1,048,576-word by 18-bit and the µ44164365 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS


    Original
    PDF PD44164085, 18M-BIT PD44164085 152-word PD44164185 576-word 18-bit PD44164365 288-word 36-bit

    4416 ic

    Abstract: AN4416 copper wire 1mm APP4416 MAX6610 4416 digital voltmeter abstract of Digital Multimeter multimeter circuit
    Text: Maxim > App Notes > Measurement Circuits Temperature Sensors and Thermal Management Keywords: temperature measurement, battery operation, digital voltmeter Aug 28, 2008 APPLICATION NOTE 4416 IC Forms Direct-Readout Temperature Probe By: Bich Pham Abstract: This application note describes a simple circuit that serves as a temperature measurement probe.


    Original
    PDF MAX6610 MAX6610: com/an4416 AN4416, APP4416, Appnote4416, 4416 ic AN4416 copper wire 1mm APP4416 4416 digital voltmeter abstract of Digital Multimeter multimeter circuit

    uPD44165082F5-E75-EQ1

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µ44165082 is a 2,097,152-word by 8-bit, the µ44165182 is a 1,048,576-word by 18-bit and the µ44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS


    Original
    PDF PD44165082, 18M-BIT PD44165082 152-word PD44165182 576-word 18-bit PD44165362 288-word 36-bit uPD44165082F5-E75-EQ1

    uPD44165084

    Abstract: uPD44165084F5-E40-EQ1
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ44165084, 44165184, 44165364 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µ44165084 is a 2,097,152-word by 8-bit, the µ44165184 is a 1,048,576-word by 18-bit and the µ44165364 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS


    Original
    PDF PD44165084, 18M-BIT PD44165084 152-word PD44165184 576-word 18-bit PD44165364 288-word 36-bit uPD44165084 uPD44165084F5-E40-EQ1

    17-33g

    Abstract: No abstract text available
    Text: This document was generated on 08/21/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 87760-4416 Active Milli-Grid Connector System 2.00mm Pitch Milli-Grid™ Header, Right Angle, Through Hole, 44 Circuits, 0.38µm


    Original
    PDF PS-87761-100 LR19980 E29179 PS-87761-100 SD-87760-109 17-33g

    Untitled

    Abstract: No abstract text available
    Text: This document was generated on 05/01/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 87758-4416 Active Milli-Grid 2.00mm Pitch Milli-Grid™ Header, Through Hole, Vertical, 44 Circuits, 0.38µm Gold


    Original
    PDF PS-87761-100 E29179 87758Series PS-87761-100 SD-87758-107

    dryer

    Abstract: No abstract text available
    Text: This document was generated on 03/27/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 44167-0001 Active Flat Blade Flat Blade Appliance Dryer Motor Crimp Housing, 10 Circuit, with Tool Removable Latch


    Original
    PDF PK-42865-001 E29179 42865Series PK-42865-001 SD-44167-001 dryer

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT 44164085A-A, 44164095A-A, 44164185A-A, 44164365A-A 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The μ44164085A-A is a 2,097,152-word by 8-bit, the μ44164095A-A is a 2,097,152-word by 9-bit, the


    Original
    PDF PD44164085A-A, 4164095A-A, 4164185A-A, 4164365A-A 18M-BIT PD44164085A-A 152-word PD44164095A-A PD44164185A-A

    zener+diode+sr+4416

    Abstract: 3M Vinyl MSDS 4432 1
    Text: 3 Double Coated Vinyl Foam Tapes 4432 • 4416 • 4408 Technical Data December, 2000 Supersedes September, 1998 Product Description Construction Tape 4432 1/32 in. (0.8 mm) Double-Coated Vinyl Foam Tape Tape 4416 1/16 in. (1.6 mm) Double-Coated Vinyl Foam Tape


    Original
    PDF 220-7E-01 zener+diode+sr+4416 3M Vinyl MSDS 4432 1

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ44164082, 44164182, 44164362 18M-BIT DDRII SRAM 2-WORD BURST OPERATION Description The µ44164082 is a 2,097,152-word by 8-bit, the µ44164182 is a 1,048,576-word by 18-bit and the µ44164362 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS


    Original
    PDF PD44164082, 18M-BIT PD44164082 152-word PD44164182 576-word 18-bit PD44164362 288-word 36-bit

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT 44164082A, 44164092A, 44164182A, 44164362A 18M-BIT DDRII SRAM 2-WORD BURST OPERATION Description The μ44164082A is a 2,097,152-word by 8-bit, the μ44164092A is a 2,097,152-word by 9-bit, the μ44164182A is a 1,048,576-word by 18-bit and the μ44164362A is a 524,288-word by 36-bit synchronous double data rate static


    Original
    PDF PD44164082A, 4164092A, 4164182A, 4164362A 18M-BIT PD44164082A 152-word PD44164092A PD44164182A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT 44165082A, 44165092A, 44165182A, 44165362A 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The μ44165082A is a 2,097,152-word by 8-bit, the μ44165092A is a 2,097,152-word by 9-bit, the μ44165182A is a 1,048,576-word by 18-bit and the μ44165362A is a 524,288-word by 36-bit synchronous quad data rate static RAM


    Original
    PDF PD44165082A, 4165092A, 4165182A, 4165362A 18M-BIT PD44165082A 152-word PD44165092A PD44165182A

    2N4416

    Abstract: SST4416
    Text: Tem ic 4416/4416A/4416 Semiconductors N-Channel JFETs Product Summary P art Number V GS<off V) V (B R )G S S M i n ( V ) 2N 4416 -< 6 -3 0 2N 4416A - 2 .5 t o - 6 4416 -£ 6 g ft M in (mS) lo ss (mA) 4 .5 5 -3 5 4 .5 5 -3 0 4 .5 5 Features Benefits


    OCR Scan
    PDF 2N4416/2N4416A/SST4416 SST4416 2N4416/A, 2N4416/2N4 S-52424--Rev. 14-Apr-97 2N4416

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¡jP D 4416001 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT Description The ,4416001 is a high speed, low power, 16,777,216 bits 16,777,216 words by 1 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V (A version) or 2.5 V ± 0.125 V (C version).


    OCR Scan
    PDF 16M-BIT 16M-WORD uPD4416001 PD4416001 54-pin PD4416001G 5-A12-9JF 5-A15-9JF PD4416001G5-C12-9JF