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    44C1000A Search Results

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    44C1000A Price and Stock

    Samsung Semiconductor KM44C1000AZ-8

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    Bristol Electronics KM44C1000AZ-8 241
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    Samsung Semiconductor KM44C1000AJ7

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    Bristol Electronics KM44C1000AJ7 25
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    44C1000A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KMM581000An-8

    Abstract: No abstract text available
    Text: DRAM MODULES KMM581000AN 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 581000A N consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package


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    PDF KMM581000AN 581000AN 81000A 44C1000AJ 20-pin 30-pin 130ns 581000AN- 150ns KMM581000An-8

    44c1000

    Abstract: No abstract text available
    Text: 44C1000AL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: tRAC • • • • • • • tcAC tRC 130ns KM 44C1000AL- 7 70 n s 2 0 ns KM44C1OOOAL- 8 80ns 2 0 ns 1 50 ns K M 4 4 C 1 0 0 0 A L -1 0


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    PDF KM44C1000AL 44C1000AL- KM44C1OOOAL- 130ns 20-LEAD 44c1000

    Untitled

    Abstract: No abstract text available
    Text: 44C1000ASL CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: tR A C tC A C tR C KM 44C1000ASL- 7 70 ns 20 ns 130ns KM 44C 1 00 0A S L - 8 80ns 20 ns 150ns K M 4 4 C 10OOASL-10 100ns 25 n s 18 0 n s


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    PDF KM44C1000ASL 44C1000ASL- 130ns 150ns 10OOASL-10 100ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and


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    PDF KMM591000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 591000AN- 130ns

    TCA 290

    Abstract: 41C1000 km44c1000aj 591000AN
    Text: KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 591 000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung K M M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and


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    PDF KMM591000AN 000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 22/iF TCA 290 41C1000 km44c1000aj

    41C1000

    Abstract: KMM591000AN8 max5516 KMM591000AN10 KMM591000AN-8 KMM591000AN-7 41C1000BJ
    Text: KMM591000AN DRAM MODULES 1 MX 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 591000AN consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package and


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    PDF KMM591000AN 591000AN 44C1000AJ 20-pin 41C1000BJ 30-pin 22fiF 41C1000 KMM591000AN8 max5516 KMM591000AN10 KMM591000AN-8 KMM591000AN-7

    km44c1000aj

    Abstract: KMM581000AN
    Text: KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package


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    PDF KMM581000AN 581000AN KMM581 44C1000AJ 20-pin 30-pin KMM581OOOAN km44c1000aj KMM581000AN

    41C1000

    Abstract: KMM591000AN 41C1000BJ
    Text: MM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KMM591 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and


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    PDF MM591000AN 591000AN KMM591 44C1000AJ 20-pin 41C1000BJ 30-pin 22jiF KMM591OOOAN 41C1000 KMM591000AN

    44C1000AL

    Abstract: No abstract text available
    Text: 44C1000AL CMOS DRAM 1 M X 4 Bit C M O S Dynam ic R A M with F ast P age M o d e FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C1000AL is a high speed CMOS 1 ,0 48 ,5 7 6 bit x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    PDF KM44C1000AL 44C1000AL KM44C1000AL 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: 44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 4 C 1 0 0 0 A S L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications


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    PDF KM44C1000ASL 130ns 10OOASL-10 180ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • TTbMlMB 001325^ aflfl ■ S M G K 44C1000AL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C1OOOAL is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory.


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    PDF KM44C1000AL KM44C1OOOAL 130ns OOOAL-10 180ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM 44C1000AL 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • P e rfo rm a n c e range: tR A C tcAC KM44C1OOOAL- 7 70ns 2 0 ns KM 44C 1 OOOAL- 8 80ns I 2 0 ns 1 50 ns 25ns i 180ns K M 4 4 C 1 0 0 0 A L -1 0 10 0ns tRC


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    PDF KM44C1000AL KM44C1OOOAL- 180ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: 44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • P e rfo rm a n c e ran ge: tR A C tC A C tR C K M 44C1 000A S L- 7 7 0 ns 2 0 ns 1 3 0 ns K M 44C1 000A S L- 8 80ns 2 0 ns 1 5 0 ns K M 4 4 C 10OOASL-1 0


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    PDF KM44C1000ASL KM44C1 000ASL- 000ASL-1 100ns cycles/256ms 70/80/100ns>

    Untitled

    Abstract: No abstract text available
    Text: 44C1000ASL CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 4 C 1 0 0 0 ASL is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications


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    PDF KM44C1000ASL 130ns 150ns 180ns 20-LEAD

    44C1000AP

    Abstract: No abstract text available
    Text: CMOS DRAM 44C1000A 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A is a high speed CMOS 1 ,0 4 8 ,5 7 6 b it X 4 Dynam ic Random A cce ss M em ory. Its design is optimized for high perform ance applications


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    PDF KM44C1000A 20-LEAD 44C1000AP

    Untitled

    Abstract: No abstract text available
    Text: S A MS UN G E L E C T R O N I C S INC b4E » • 7^^142 D G 1 3 2 7 b 3b7 « S M S K 44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 ASL is a high speed CMOS


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    PDF KM44C1000ASL KM44C1OOOASL- 130ns 1000ASL- 150ns OOOASL-10 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM 44C1000A 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications


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    PDF KM44C1000A 44C1000A- 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: 44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tnAC tCAC tue KM 44C 1000ASL- 7 70ns 20ns 130ns KM 44C 1000ASL- 8 80ns 20ns 150ns KM 44C 10OOASL-10 100ns 25ns 180ns • • • •


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    PDF KM44C1000ASL 1000ASL- 10OOASL-10 100ns 130ns 150ns 180ns 44C10 KM44C1000ASL

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM 44C1000AL 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications


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    PDF KM44C1000AL 130ns 150ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM 44C1000A 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A is a high speed CMOS 1 ,0 4 8 ,5 7 6 b it X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications


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    PDF KM44C1000A 130ns 44C1000A- 150ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b4E D • 7^4142 44C1000A D D 1 3 2 4 2 TÔ4 CMOS DRAM 1MX4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess M emory.


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    PDF KM44C1000A 130ns. KM44C1OOOA- 20-LEAD 0G1325fl 44C1000A

    41C464

    Abstract: 41C258 41C1000 44C256C
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. Product G u id e.


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    PDF KM41C256 KM424C256 424C256A. KM424C257 KM428C128 428C256. 41C464 41C258 41C1000 44C256C

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM 44C1000AL 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications


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    PDF KM44C1000AL 130ns 1000AL- 150ns 20-LEAD

    44C1000AP

    Abstract: km44c1000aj
    Text: CMOS DRAM 44C1000A 1 M X 4 Bit C M O S Dynamic RAM with'Fast Page M ode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A cce ss Memory. Its design is optimized for high perform ance applications


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    PDF KM44C1000A 20-LEAD 44C1000AP km44c1000aj